- Tytuł:
- Quantum Point Contact simulations on ISIS structure
- Autorzy:
-
Hałdaś, G.
Mączka, M. - Powiązania:
- https://bibliotekanauki.pl/articles/378433.pdf
- Data publikacji:
- 2006
- Wydawca:
- Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
- Tematy:
-
QPC
ISIS
struktura ISIS
półrzewodniki
modelowanie numeryczne
quantum point contact (QPC)
inverted semiconductor insulator semiconductor (ISIS)
ISIS structure
semiconductors
numerical model - Opis:
- In the work a numerical method of dissolving the Poisson equation in an electrostatically formed Quantum Point Contact (QPC) is described. Such a device is based on the structure called ISIS (Inverted Semiconductor Insulator Semiconductor). This structure was proposed in 1991 by Kastner [1] who made single electron transistor in it. In this paper the Poisson equation is solved by means of boundary elements method [2] with functions of the single layer potential [3] whose result provides potential distributions of the QPC device. The electronic properties of the QPC model are found by the use of Green functions method [4]. The interaction between structure and two leads is described by self-energy method [5]. The QPC conductance is calculated with the help of Landauer formula, after the Green’s function corresponding to device Hamiltonian is evaluated.
- Źródło:
-
Electron Technology : Internet Journal; 2005-2006, 37/38, 12; 1-6
1897-2381 - Pojawia się w:
- Electron Technology : Internet Journal
- Dostawca treści:
- Biblioteka Nauki