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Tytuł:
Accuracy of drying selected products using a moisture analyzer method based on infrared radiation
Autorzy:
Janas, Sławomir
Kowalska, Małgorzata
Powiązania:
https://bibliotekanauki.pl/articles/27311743.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Czasopisma i Monografie PAN
Tematy:
moisture analyser
infrared heating
food quality
mass measurements
Opis:
Trueness and precision of a method for determining the water content (%) of food and chemical products based on infrared radiation with a wavelength in the range (2.70÷7.21 μm) was evaluated. The most accurate measurements for food products were obtained when the heat source was a radiant heater with a radiation wavelength of 7.21 μm, a trueness deviation of 0.01%. When heated with radiation with wavelengths (from 3.32 μm to 7.21 μm), the trueness of the measurement ranged (0.03%÷0.13%) for chemical products. The shortest analysis time for food products was found when the analysis was carried out using an IR source with a wavelength of 7.21 μm, while for chemical products, a heat source with a wavelength of 2.70÷7.21 μm was optimal. According to the results of the analysis, the use of IR radiation with a wavelength range of 3.32÷7.21 μm is an alternative for accurate measurements.
Źródło:
Metrology and Measurement Systems; 2023, 30, 2; 305--321
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acoustic Emission and Infrared Thermography Study of Low Strain Tensile Behaviour of AISI 304L Stainless Steel
Autorzy:
Sapietová, Alžbeta
Raček, Marek
Dekýš, Vladimir
Sapieta, Milan
Sága, Milan
Šofer, Pavel
Powiązania:
https://bibliotekanauki.pl/articles/27313863.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Czasopisma i Monografie PAN
Tematy:
acoustic emission
infrared thermography
stainless steel
tensile deformation
Opis:
In-situ study of deformation behaviour and mechanisms occurring during early stages of deformation is of a great practical importance. Low stacking fault energy materials, as is the case of AISI 304L, show non-linear deformation characteristics way below the bulk yield point. Shockley partial dislocations, formation of stacking faults respectively, resulting in creation of shear bands and ε-martensite transformation are the mechanisms occurring in the low strains in the studied steel. Acoustic emission and infrared thermography have been used in this study to investigate the deformation kinetics at the low strain stages of slow strain rate tensile tests. Acoustic emission cumulative energy together with the tracking of specimen maximum temperature have been found to be very useful in-situ techniques both supplementing each other in the sense of the sensitivity to different mechanisms. Mechanical, acoustic emission and infrared thermography results are discussed in detail with respect to potential occurred mechanism.
Źródło:
Archives of Metallurgy and Materials; 2023, 68, 2; 463--468
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of power and energy parameters of the conveyor infrared dryer of oil-containing raw materials
Analiza mocy i parametrów energetycznych przenośnikowej, działającej na podczerwień suszarni surowców zawierających olej
Autorzy:
Palamarchuk, Igor
Paziuk, Vadim
Palamarchuk, Vladyslav
Hulevych, Ruslan
Kalizhanova, Aliya
Sarsembayev, Magzhan
Powiązania:
https://bibliotekanauki.pl/articles/27315415.pdf
Data publikacji:
2023
Wydawca:
Politechnika Lubelska. Wydawnictwo Politechniki Lubelskiej
Tematy:
thermoradiation drying
infrared conveyor dryer
oil-containing raw materials
vibrofluidized bed
energy and power parameters
low-frequency oscillations
suszenie termiczne
suszarka przenośnikowa na podczerwień
surowce zawierające olej
złoże wibrofluidyzowane
parametry energii i mocy
oscylacje o niskiej częstotliwości
Opis:
Infrared drying of bulk agricultural products is becoming increasingly widespread in processing and food industries due to energy efficiency, compactness of technological equipment, and ease of operation. The purpose of the presented research is to determine the influence of the technological parameters of the process of infrared drying of the moving layer of oil-containing raw materials. An experimental model of a vibro-conveyor dryer and a set of measuring equipment were developed to solve the problems. The scientific novelty of the work is the confirmation that in the conditions of a vibro-liquefied layer of products, unique conditions are created for the constant renewal of heat exchange surfaces and, accordingly, the leveling of the negative thermal radiation effect on the products, the possibility of advancing the product layer along the working zone, reducing the forces of internal friction in the technological mass, which leads to a decrease in energy consumption on the process Laws have been established regarding the effect of the number of thermoradiation blocks, the load on the flexible belt of the wave conveyor, the speed of product advancement on the belt on the dynamics of infrared drying of soybeans and rapeseed. The practical value of the work was the substantiation of the operating modes of thermoradiation drying with the help of a vibrating wave conveyor installation based on the energy saving of the technological impact, high intensification of the process and minimization of the negative effect on the properties of the processed products.
Suszenie podczerwienią produktów rolnych luzem staje się coraz bardziej powszechne w przemyśle przetwórczym i spożywczym ze względu na energooszczędność, kompaktowość urządzeń technologicznych i łatwość obsługi. Celem prezentowanych badań jest określenie wpływu parametrów technologicznych procesu suszenia podczerwienią ruchomej warstwy surowców zawierających olej. W celu rozwiązania problemów opracowano eksperymentalny model suszarki z przenośnikiem wibracyjnym oraz zestaw urządzeń pomiarowych. Naukową nowością pracy jest potwierdzenie, że w warunkach skraplania wibracyjnego warstwy produktów powstają unikalne warunki do ciągłego odnawiania powierzchni wymiany ciepła, a tym samym niwelowania negatywnego wpływu promieniowania cieplnego na produkty, możliwość przesuwania warstwy produktu wzdłuż strefy roboczej, Zmniejszenie sił tarcia wewnętrznego w masie technologicznej, co prowadzi do zmniejszenia zużycia energii w procesie. Zdefiniowano prawa dotyczące wpływu liczby bloków termoradiacyjnych, obciążenia elastycznej taśmy przenośnika falowego, prędkości przesuwania produktu na taśmie na dynamikę suszenia soi i rzepaku w podczerwieni. Praktyczną wartością pracy było uzasadnienie trybów pracy suszenia termoradiacyjnego za pomocą instalacji przenośnika wibracyjno-falowego w oparciu o oszczędność energii oddziaływania technologicznego, wysoką intensyfikację procesu i minimalizację negatywnego wpływu na właściwości przetwarzanych produktów.
Źródło:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska; 2023, 13, 2; 10--14
2083-0157
2391-6761
Pojawia się w:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Badanie skuteczności materiałów siatek maskujących w aspekcie obserwacji z pozycji BSP
Testing the Effectiveness of Camouflage Nets Materials in Terms of Observation from the UAV Position
Autorzy:
Szajewska, Anna
Kalinowski, Paweł
Szajewski, Krzysztof
Powiązania:
https://bibliotekanauki.pl/articles/27312459.pdf
Data publikacji:
2023
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
BSP
kamuflaż termiczny
rozpoznanie w podczerwieni
siatki maskujące
teledetekcja
ocena kamuflażu
UAV
thermal camouflage
infrared reconnaissance
camouflage nets
remote sensing
camouflage evaluation
Opis:
W artykule przedstawiono wyniki obserwacji wykonanych z powietrza za pomocą BSP w podczerwieni. Warunki obserwacji były zbliżone do rzeczywistych warunków pola walki. Wyniki obserwacji porównano z badaniami laboratoryjnymi, w których użyto wzorca ciała czarnego do pomiaru transmisji radiacyjnej 11 różnych materiałów siatek maskujących. W badaniach odniesiono się do zmierzonej procentowej przepuszczalności promieniowania badanych materiałów, oznaczonych dalej w artykule współczynnikiem transparentności. Z przeprowadzonych badań wynika, że korelacja między transparentnością w świetle widzialnym i promieniowaniem podczerwonym przechodzącym przez materiał maskujący dla przebadanych materiałów nie jest zbieżna. Biorąc pod uwagę fakt, że siatki maskujące i materiały, z których są one wykonywane, stały się wyposażeniem bardzo pożądanym na współczesnym polu walki i wiele podmiotów rozpoczęło ich produkcję, powstała silna potrzeba opracowania szybkiej metody oceny przydatności takich materiałów w aspekcie kamuflażu termicznego. W pracy zaproponowano zastosowanie prostego wskaźnika oceny kamuflażu wyznaczanego na podstawie transparentności w dwóch zakresach spektralnych.
This article presents the results of aerial observations conducted using infrared airborne surveillance platforms. The observation conditions closely resembled real battlefield conditions. The observation results were compared with laboratory studies that utilized a black body reference to measure the radiative transmission of 11 different masking nets materials. The research referred to the measured transparency coefficient of the tested materials. The conducted research indicates that there is no consistent correlation between transparency in visible light and infrared radiation passing through the masking material for the tested materials. Considering that camouflage meshes and the materials from which they are made have become highly sought-after equipment on the modern battlefield, with many entities initiating their production, there is a strong need to develop a rapid method for assessing the suitability of such materials in terms of thermal camouflage. The study proposes the utilization of a simple camouflage evaluation index based on transparency in two spectral ranges.
Źródło:
Pomiary Automatyka Robotyka; 2023, 27, 3; 39--44
1427-9126
Pojawia się w:
Pomiary Automatyka Robotyka
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors
Autorzy:
Morath, Christian P.
Casias, Lilian K.
Umana-Membreno, Gilberto A.
Webster, Preston T.
Grant, Perry C.
Maestas, Diana
Cowan, Vincent M.
Faraone, Lorenzo
Krishna, Sanjay
Balakrishnan, Ganesh
Powiązania:
https://bibliotekanauki.pl/articles/2204224.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
III-V infrared detectors
Bulk InAsSb
InAsSb/InAs superlattice
mobility
carrier concentration
Opis:
The sensitivity of III-V-based infrared detectors is critically dependent upon the carrier concentration and mobility of the absorber layer, and thus, accurate knowledge of each is required to design structures for maximum detector performance. Here, measurements of the bulk in-plane resistivity, in-plane mobility, and carrier concentration as a function of temperature are reported for non-intentionally doped and Si-doped mid-wave infrared InAs₀.₉₁Sb₀.₀₉ alloy and InAs/InAs₀.₆₅Sb₀.₃₅ type-II superlattice materials grown on GaSb substrates. Standard temperature- and magnetic-field-dependent resistivity and the Hall measurements on mesa samples in the van der Pauw configuration are performed, and multicarrier fitting and modelling are used to isolate transport of each carrier species. The results show that up to 5 carrier species of the surface, interface and bulk variety contribute to conduction, with bulk electron and hole mobility up to 2·10⁵ cm²/V s and 8·10³ cm²/V s, respectively and background dopant concentration levels were between 10¹⁴ and 10¹⁵ cm¯³. The in-plane mobility temperatures dependence is determined and trends of each carrier species with temperature and dose are analysed.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144554
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cryogenic solutions for IR detectors : a guideline for selection
Autorzy:
Griot, René
Vasse, Christophe
Arts, Roel
Ivanov, Ruslan
Höglund, Linda
Costard, Eric
Powiązania:
https://bibliotekanauki.pl/articles/2204212.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
cryocoolers
Stirling rotary coolers
Stirling linear coolers
pulse tube coolers
infrared detectors
Opis:
As long as high resolution or long-range observation is to be achieved using infrared detection, it will be necessary to cool down the detector in order to reach the best sensitivity and dynamics. This paper describes different cooling solutions currently used for this purpose discussing advantages and drawbacks. Some guideline is given for cooler choice and selection. The focus is on rotary Stirling coolers illustrated by description of the RMs1 cooler dedicated to high operating temperature size, weight, and power infrared detectors. A user case study is presented with cooler power consumption and cool down time of the RMs1 cooler when integrated in IRnova’s Oden MW IDDCAs.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144566
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Discussion around IR material and structure issues to go toward high performance small pixel pitch IR HOT FPAs
Autorzy:
Gravrand, Olivier
Baier, Nicolas
Ferron, Alexandre
Rochette, Florent
Lobre, Clément
Bertoz, Jocelyn
Rubaldo, Laurent
Powiązania:
https://bibliotekanauki.pl/articles/2204207.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
mid-wave infrared
focal plane array
high operating temperature
small pitch
modulation transfer function
finite element method
Opis:
In the last decade, infrared imaging detectors trend has gone for smaller pixels and larger formats. Most of the time, this scaling is carried out at a given total sensitive area for a single focal plane array. As an example, QVGA 30 μm pitch and VGA 15 μm pitch exhibit exactly the same sensitive area. SXGA 10 μm pitch tends to be very similar, as well. This increase in format is beneficial to image resolution. However, this scaling to even smaller pixels raises questions because the pixel size becomes similar to the IR wavelength, but also to the typical transport dimensions in the absorbing material. Hence, maintaining resolution for such small pixel pitches requires a good control of the modulation transfer function and quantum efficiency of the array, while reducing the pixel size. This might not be obtained just by scaling the pixel dimensions. As an example, bulk planar structures suffer from excessive lateral diffusion length inducing pixel-to-pixel cross talk and thus degrading the modulation transfer function. Transport anisotropy in some type II superlattice structures might also be an issue for the diffusion modulation transfer function. On the other side, mesa structures might minimize cross talk by physically separating pixels, but also tend to degrade the quantum efficiency due to a non-negligible pixel fill factor shrinking down the pixel size. This paper discusses those issues, taking into account different material systems and structures, in the perspective of the expected future pixel pitch infrared focal plane arrays.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144561
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electro-optical performance and anisotropic transport study of a Ga-free type-II superlattice barrier structure
Autorzy:
Bouschet, Maxime
Arounassalame, Vignesh
Ramiandrasoa, Anthony
Perez, Jean-Philippe
Péré-Laperne, Nicolas
Ribet-Mohamed, Isabelle
Christol, Philippe
Powiązania:
https://bibliotekanauki.pl/articles/2204222.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared photodetector
type-II superlattice
barrier structure
Ga-free
transport
anisotropy
Opis:
In the past ten years, InAs/InAsSb type-II superlattice has emerged as a promising technology for high-temperature mid-wave infrared photodetector. Nevertheless, transport properties are still poorly understood in this type of material. In this paper, optical and electro-optical measurements have been realised on InAs/InAsSb type-II superlattice midwave infrared photodetectors. Quantum efficiency of 50% is measured at 150 K, on the front side illumination and simple pass configuration. Absorption measurement, as well as lifetime measurement are used to theoretically calculate the quantum efficiency thanks to Hovel’s equation. Diffusion length values have been extracted from this model ranging from 1.55 μm at 90 K to 7.44 μm at 200 K. Hole mobility values, deduced from both diffusion length and lifetime measurements, varied from 3.64 cm²/Vs at 90 K to 37.7 cm²/Vs at 200 K. The authors then discuss the hole diffusion length and mobility variations within temperature and try to identify the intrinsic transport mechanisms involved in the superlattice structure.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144549
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region
Autorzy:
Durlin, Quentin
Aliane, Abdelkader
André, Luc
Kaya, Hacile
Cocq le, Mélanie
Goudon, Valérie
Vialle, Claire
Veillerot, Marc
Hartmann, Jean-Michel
Powiązania:
https://bibliotekanauki.pl/articles/2204221.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
germanium (Ge)
photodiode
shortwave infrared detector
Opis:
Germanium (Ge) PiN photodetectors are fabricated and electro-optically characterised. Unintentionally and p-type doped Ge layers are grown in a reduced-pressure chemical vapour deposition tool on a 200 mm diameter, <001>-oriented, p-type silicon (Si) substrates. Thanks to two Ge growth temperatures and the use of short thermal cycling afterwards, threading dislocation densities down to 10⁷ cmˉ² are obtained. Instead of phosphorous (P) ion implantation in germanium, the authors use in situ phosphorous-doped poly-crystalline Si (poly-Si) in the n-type regions. Secondary ion mass spectrometry revealed that P was confined in poly-Si and did not diffuse in Ge layers beneath. Over a wide range of tested device geometries, production yield was dramatically increased, with almost no short circuits. At 30 °C and at -0.1 V bias, corresponding to the highest dynamic resistance, the median dark current of 10 μm diameter photodiodes is in the 5-20 nA range depending on the size of the n-type region. The dark current is limited by the Shockley-Read-Hall generation and the noise power spectral density of the current by the flicker noise contribution. A responsivity of 0.55 and 0.33 A/W at 1.31 and 1.55 μm, respectively, is demonstrated with a 1.8 μm thick absorption Ge layer and an optimized anti-reflection coating at 1.55 μm. These results pave the way for a cost-effective technology based on group-IV semiconductors.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144550
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fault detection in photovoltaic systems using the inverse of the belonging individual Gaussian probability
Autorzy:
Sendjasni, Salah
Yagoubi, Benabdellah
Daoud, Mohamed
Belbachir, Nasreddine
Ziane, Abderrezzaq
Powiązania:
https://bibliotekanauki.pl/articles/2174471.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Polskie Towarzystwo Diagnostyki Technicznej PAN
Tematy:
photovoltaic systems
faults
infrared image
Gaussian white noise
inverse probability
system fotowoltaiczny
uszkodzenie
obraz termowizyjny
Opis:
This article addresses the problem of fault early detection in photovoltaic systems. In the production field, solar power plants consist of many photovoltaic arrays, which may suffer from many different types of malfunctions over time. Hence, fault early detection before it affects PV systems and leads to a full system failure is essential to monitor these systems. The fields of control and monitoring of systems have been extensively approached by many researchers using various fault detection methods. Despite all this research, to early detect and locate faults in a very large photovoltaic power plant, we must, in particular, think of an effective method that allows us to do so at the lowest costs and time. Thus, we propose a new robust technique based on the inverse of the belonging individual Gaussian probability (IBIGP) to early detect and locate faults in the power curve as well as in the Infrared image of the photovoltaic systems. While most fault detection methods are well incorporated in other domains, the IBIGP technique is still in its infancy in the photovoltaic field. We will show, however, in this work that the IBIGP technique is a very promising tool for fault early detection enhancement.
Źródło:
Diagnostyka; 2023, 24, 1; art. no. 2023112
1641-6414
2449-5220
Pojawia się w:
Diagnostyka
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Grating-free high-x InP/InxGa1-xAs mid-wavelength infrared QWIP focal plane array
Autorzy:
Besikci, Cengiz
Balcı, Saadettin V.
Tanış, Onur
Güngör, Oğuz O.
Arpaguş, Esra S.
Powiązania:
https://bibliotekanauki.pl/articles/2204209.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared imaging
quantum well
infrared photodetector
Opis:
The authors report the characteristics of a diffraction-grating-free mid-wavelength infrared InP/In₀.₈₅Ga₀.₁₅As quantum well infrared photodetector focal plane array with a 640 × 512 format and a 15 µm pitch. Combination of a normal incident radiation sensing ability of the high-x InxGa1-xAs quantum wells with a large gain property of the InP barriers led to a diffraction-grating-free quantum well infrared photodetector focal plane array with characteristics displaying great promise to keep the status of the quantum well infrared photodetector as a robust member of the new generation thermal imaging sensor family. The focal plane array exhibited excellent uniformity with noise equivalent temperature difference nonuniformity as low as 10% and a mean noise equivalent temperature difference below 20 mK with f/2 optics at 78 K in the absence of grating. Elimination of the diffraction-grating and large enough conversion efficiency (as high as ~70% at a -3.5 V bias voltage) abolish the bottlenecks of the quantum well infrared photodetector technology for the new generation very small-pitch focal plane arrays.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144563
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates
Autorzy:
Lubyshev, Dmitri
Fastenau, Joel M.
Kattner, Michael
Frey, Philip
Nelson, Scott A.
Flick, Ryan
Wu, Ying
Liu, Amy W. K.
Szymanski, Dennis E.
Martinez, Becky
Furlong, Mark J.
Dennis, Richard
Bundas, Jason
Sundaram, Mani
Powiązania:
https://bibliotekanauki.pl/articles/2204213.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
focal plane arrays
InAs/InAsSb
photodetectors
long wavelength infrared type-II superlattice
metamorphic buffers
superlattice period reduction
Opis:
Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on highindex substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144568
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
HgCdTe energy gap determination from photoluminescence and spectral response measurements
Autorzy:
Murawski, Krzysztof
Kopytko, Małgorzata
Madejczyk, Paweł
Majkowycz, Kinga
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/2204344.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
infrared detectors
HgCdTe
photoluminescence
spectral responsivity
semiconductor energy gap
Opis:
The temperature dependence of photoluminescence spectra has been studied for the HgCdTe epilayer. At low temperatures, the signal has plenty of band-tail states and shallow/deep defects which makes it difficult to evaluate the material bandgap. In most of the published reports, the photoluminescence spectrum containing multiple peaks is analyzed using a Gaussian fit to a particular peak. However, the determination of the peak position deviates from the energy gap value. Consequently, it may seem that a blue shift with increasing temperature becomes apparent. In our approach, the main peak was fitted with the expression proportional to the product of the joint density of states and the Boltzmann distribution function. The energy gap determined on this basis coincides in the entire temperature range with the theoretical Hansen dependence for the assumed Cd molar composition of the active layer. In addition, the result coincides well with the bandgap energy determined on the basis of the cut-off wavelength at which the detector response drops to 50% of the peak value.
Źródło:
Metrology and Measurement Systems; 2023, 30, 1; 183--194
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High performance type-II InAs/GaSb superlattice infrared photodetectors with a short cut-off wavelength
Autorzy:
Delmas, Marie
Ramos, David
Ivanov, Ruslan
Žurauskaitė, Laura
Evans, Dean
Rihtnesberg, David
Almqvist, Susanne
Becanovic, Smilja
Costard, Eric
Höglund, Linda
Powiązania:
https://bibliotekanauki.pl/articles/2204225.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detectors
short-wavelength infrared
InAs/GaSb superlattice
type-II superlattice
Opis:
This work investigates the potential of InAs/GaSb superlattice detectors for the shortwavelength infrared spectral band. A barrier detector structure was grown by molecular beam epitaxy and devices were fabricated using standard photolithography techniques. Optical and electrical characterisations were carried out and the current limitations were identified. The authors found that the short diffusion length of ~1.8 µm is currently limiting the quantum efficiency (double-pass, no anti-reflection coating) to 43% at 2.8 µm and 200 K. The dark current density is limited by the surface leakage current which shows generation-recombination and diffusion characters below and above 195 K, respectively. By fitting the size dependence of the dark current, the bulk values have been estimated to be 6.57·10ˉ⁶ A/cm² at 200 K and 2.31·10ˉ⁶ A/cm² at 250 K, which is only a factor of 4 and 2, respectively, above the Rule07.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144555
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
InAs/InAsSb superlattice infrared detectors
Autorzy:
Ting, David Z.
Soibel, Alexander
Khoshakhlagh, Arezou
Keo, Sam A.
Rafol, Sir B.
Fisher, Anita M.
Hill, Cory J.
Pepper, Brian J.
Maruyama, Yuki
Gunapala, Sarath D.
Powiązania:
https://bibliotekanauki.pl/articles/2204211.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
type-II superlattice
InAs/InAsSb
complementary barrier infrared detectors
strained layer superlattice
Opis:
Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type- II strained layer superlattice absorbers have achieved excellent performance. In the long and very long wavelength infrared, however, n-type InAs/InAsSb type-II strained layer superlattice detectors are limited by their relatively small absorption coefficients and short growth-direction hole diffusion lengths, and consequently have only been able to achieve modest level of quantum efficiency. The authors present an overview of their progress in exploring complementary barrier infrared detectors that contain p-type InAs/InAsSb type-II strained layer superlattice absorbers for quantum efficiency enhancement. The authors describe some representative results, and also provide additional references for more indepth discussions. Results on InAs/InAsSb type-II strained layer superlattice focal plane arrays for potential NASA applications are also briefly discussed.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144565
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 442

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