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    Wyświetlanie 1-5 z 5
    Tytuł:
    Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors
    Autorzy:
    Michalczewski, Krystian
    Tsai, T. Y.
    Martyniuk, P.
    Wu, C. H.
    Powiązania:
    https://bibliotekanauki.pl/articles/201469.pdf
    Data publikacji:
    2019
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    HOT
    MWIR
    T2SLs
    InAs/InAsSb
    photoresistors
    fotorezystory
    Opis:
    We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 1 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb above 200 K..
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2019, 67, 1; 141-145
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    InAs/InAsSb superlattice infrared detectors
    Autorzy:
    Ting, David Z.
    Soibel, Alexander
    Khoshakhlagh, Arezou
    Keo, Sam A.
    Rafol, Sir B.
    Fisher, Anita M.
    Hill, Cory J.
    Pepper, Brian J.
    Maruyama, Yuki
    Gunapala, Sarath D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2204211.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detector
    type-II superlattice
    InAs/InAsSb
    complementary barrier infrared detectors
    strained layer superlattice
    Opis:
    Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type- II strained layer superlattice absorbers have achieved excellent performance. In the long and very long wavelength infrared, however, n-type InAs/InAsSb type-II strained layer superlattice detectors are limited by their relatively small absorption coefficients and short growth-direction hole diffusion lengths, and consequently have only been able to achieve modest level of quantum efficiency. The authors present an overview of their progress in exploring complementary barrier infrared detectors that contain p-type InAs/InAsSb type-II strained layer superlattice absorbers for quantum efficiency enhancement. The authors describe some representative results, and also provide additional references for more indepth discussions. Results on InAs/InAsSb type-II strained layer superlattice focal plane arrays for potential NASA applications are also briefly discussed.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144565
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates
    Autorzy:
    Lubyshev, Dmitri
    Fastenau, Joel M.
    Kattner, Michael
    Frey, Philip
    Nelson, Scott A.
    Flick, Ryan
    Wu, Ying
    Liu, Amy W. K.
    Szymanski, Dennis E.
    Martinez, Becky
    Furlong, Mark J.
    Dennis, Richard
    Bundas, Jason
    Sundaram, Mani
    Powiązania:
    https://bibliotekanauki.pl/articles/2204213.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    focal plane arrays
    InAs/InAsSb
    photodetectors
    long wavelength infrared type-II superlattice
    metamorphic buffers
    superlattice period reduction
    Opis:
    Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on highindex substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144568
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors
    Autorzy:
    Morath, Christian P.
    Casias, Lilian K.
    Umana-Membreno, Gilberto A.
    Webster, Preston T.
    Grant, Perry C.
    Maestas, Diana
    Cowan, Vincent M.
    Faraone, Lorenzo
    Krishna, Sanjay
    Balakrishnan, Ganesh
    Powiązania:
    https://bibliotekanauki.pl/articles/2204224.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    III-V infrared detectors
    Bulk InAsSb
    InAsSb/InAs superlattice
    mobility
    carrier concentration
    Opis:
    The sensitivity of III-V-based infrared detectors is critically dependent upon the carrier concentration and mobility of the absorber layer, and thus, accurate knowledge of each is required to design structures for maximum detector performance. Here, measurements of the bulk in-plane resistivity, in-plane mobility, and carrier concentration as a function of temperature are reported for non-intentionally doped and Si-doped mid-wave infrared InAs₀.₉₁Sb₀.₀₉ alloy and InAs/InAs₀.₆₅Sb₀.₃₅ type-II superlattice materials grown on GaSb substrates. Standard temperature- and magnetic-field-dependent resistivity and the Hall measurements on mesa samples in the van der Pauw configuration are performed, and multicarrier fitting and modelling are used to isolate transport of each carrier species. The results show that up to 5 carrier species of the surface, interface and bulk variety contribute to conduction, with bulk electron and hole mobility up to 2·10⁵ cm²/V s and 8·10³ cm²/V s, respectively and background dopant concentration levels were between 10¹⁴ and 10¹⁵ cm¯³. The in-plane mobility temperatures dependence is determined and trends of each carrier species with temperature and dose are analysed.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144554
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Application of cross-correlation-based transimpedance amplifier in InAs and InAsSb IR detectors noise measurements
    Autorzy:
    Achtenberg, Krzysztof
    Mikołajczyk, Janusz
    Bielecki, Zbigniew
    Powiązania:
    https://bibliotekanauki.pl/articles/2063907.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    cross-correlation
    IR detector
    noise
    transimpedance amplifier
    InAs
    InAsSb
    Opis:
    The paper presents noise measurements in low-resistance photodetectors using a crosscorrelation-based transimpedance amplifier. Such measurements usually apply a transimpedance amplifier design to provide a current fluctuation amplification. In the case of low-resistance sources, the measurement system causes additional relevant system noise which can be higher than noise generated in a tested detector. It mainly comes from the equivalent input voltage noise of the transimpedance amplifier. In this work, the unique circuit and a three-step procedure were used to reduce the floor noise, covering the measured infrared detector noise, mainly when operating with no-bias or low-bias voltage. The modified circuit and procedure to measure the noise of unbiased and biased detectors characterized by resistances much lower than 100 Ω were presented. Under low biases, the reference low-resistance resistors tested the measurement system operation and techniques. After the system verification, noise characteristics in low-resistance InAs and InAsSb infrared detectors were also measured.
    Źródło:
    Opto-Electronics Review; 2022, 30, 2; art. no. e141126
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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