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    Wyświetlanie 1-3 z 3
    Tytuł:
    Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure
    Autorzy:
    Lee, Hyun-Jin
    Eom, Jun Ho
    Jung, Hyun Chul
    Kang, Ko-Ku
    Ryu, Seong Min
    Jang, Ahreum
    Kim, Jong Gi
    Kim, Young Ho
    Jung, Han
    Kim, Sun Ho
    Choi, Jong Hwa
    Powiązania:
    https://bibliotekanauki.pl/articles/2204217.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    InAs/GaSb type-II superlattice
    dualband detector
    dark current
    spectral quantum efficiency
    noise equivalent temperature difference
    Opis:
    Dual-band infrared detector, which acquires more image information than single-band detectors, has excellent detection, recognition, and identification capabilities. The dual-band detector can have two bumps to connect with each absorber layer, but it is difficult to implement small pitch focal plane arrays and its fabrication process is complicated. Therefore, the most effective way for a dual-band detector is to acquire each band by biasselectable with one bump. To aim this, a dual-band MWIR/LWIR detector based on an InAs/GaSb type-II superlattice nBn structure was designed and its performance was evaluated in this work. Since two absorber layers were separated by the barrier layer, each band can be detected by bias-selectable with one bump. The fabricated dual-band device exhibited the dark current and spectral response characteristics of MWIR and LWIR bands under negative and positive bias, respectively. Spectral crosstalk that is a major issue in dualband detectors was also improved. Finally, a 20 µm pitch 640 x 512 dual-band detector was fabricated, and both MWIR and LWIR images exhibited an average noise equivalent temperature difference of 30 mK or less at 80 K.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144560
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Measurements of low frequency noise of infrared photo-detectors with transimpedance detection system
    Autorzy:
    Ciura, Ł.
    Kolek, A.
    Gawron, W.
    Kowalewski, A.
    Stanaszek, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/221094.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    1/f noise
    infrared detectors
    nBn structure
    HgCdTe heterostructures
    noise measurements
    transimpedance detection system
    type II InAs/GaSb superlattice
    Opis:
    The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT) heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.
    Źródło:
    Metrology and Measurement Systems; 2014, 21, 3; 461-472
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High performance type-II InAs/GaSb superlattice infrared photodetectors with a short cut-off wavelength
    Autorzy:
    Delmas, Marie
    Ramos, David
    Ivanov, Ruslan
    Žurauskaitė, Laura
    Evans, Dean
    Rihtnesberg, David
    Almqvist, Susanne
    Becanovic, Smilja
    Costard, Eric
    Höglund, Linda
    Powiązania:
    https://bibliotekanauki.pl/articles/2204225.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detectors
    short-wavelength infrared
    InAs/GaSb superlattice
    type-II superlattice
    Opis:
    This work investigates the potential of InAs/GaSb superlattice detectors for the shortwavelength infrared spectral band. A barrier detector structure was grown by molecular beam epitaxy and devices were fabricated using standard photolithography techniques. Optical and electrical characterisations were carried out and the current limitations were identified. The authors found that the short diffusion length of ~1.8 µm is currently limiting the quantum efficiency (double-pass, no anti-reflection coating) to 43% at 2.8 µm and 200 K. The dark current density is limited by the surface leakage current which shows generation-recombination and diffusion characters below and above 195 K, respectively. By fitting the size dependence of the dark current, the bulk values have been estimated to be 6.57·10ˉ⁶ A/cm² at 200 K and 2.31·10ˉ⁶ A/cm² at 250 K, which is only a factor of 4 and 2, respectively, above the Rule07.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144555
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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