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Wyszukujesz frazę "Heterojunction" wg kryterium: Temat


Wyświetlanie 1-12 z 12
Tytuł:
A simulation study of temperature effects on performance parameters of silicon heterojunction solar cells with different ITO/a-Si:H selective contacts
Autorzy:
Balent, Jošt
Topič, Marko
Krč, Janez
Powiązania:
https://bibliotekanauki.pl/articles/2063902.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
heterojunction
photovoltaics
simulation
temperature
tunnelling
Opis:
Effects of temperature variation on the performance of silicon heterojunction solar cells are studied using opto-electrical simulations. It is shown that the low-temperature cell efficiency is determined by the fill factor, while at high temperatures it depends on the open-circuit voltage. Simulations revealed that the low-temperature drop in the fill factor is caused by poor tunnelling, in particular at the ITO/p-a-Si:H heterojunction. The authors link this drop in fill factor to a low maximum-power-point voltage and show how poor tunnelling is reflected in the charge redistribution determining the device voltage. The effect of the contact work function on temperature behaviour of efficiency by varying the electron affinity of ITO layers has been demonstrated. It was also demonstrated that increasing the electron affinity of ITO on the p-side minimises the work function mismatch, leading to significant improvements in efficiency, especially at low temperatures, while optimisation on the n-side results in maginal improvements over the entire temperature range. In addition to the cumulative effects of the temperature-dependent parameters, their individual contributions to the efficiency were also investigated. Moreover, it was presented that the thermal energy (kT) determines the efficiency temperature behaviour, while other parameters play only a minor role. This paper shows how temperature variations affect device performance parameters.
Źródło:
Opto-Electronics Review; 2022, 30, 1; 1--13
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impact of the etching time and current density on Capacitance-Voltage characteristics of P-type of porous silicon
Autorzy:
Hadi, Hasan A.
Abood, Tareq H.
Mohi, Ali T.
Karim, Mahmood S.
Powiązania:
https://bibliotekanauki.pl/articles/1178661.pdf
Data publikacji:
2017
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
electrochemical etching
heterojunction
porous silicon
thin films
Opis:
In This paper, electrochemical etching teqniques was using to formation of nano crystalline porous silicon layer on p-type Si substrates. Measurement of capacitance – voltage characteristics at various etching time and current densities were used for calculated built in voltage and type of heterojunction. The built in voltage values were decreased with increasing etching time and current densities for both anisotype Al/PS/p-Si/Al heterojunction. These characteristics are interpreted by assuming the abrupt heterojunction model. The effect of different etching time and current densities on electrical properties of PS have been investigated.
Źródło:
World Scientific News; 2017, 67, 2; 149-160
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base
Autorzy:
Zaręba, A.
Łukasiak, L.
Jakubowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/308625.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
heterojunction bipolar transistor
SiGe
base width modulation
Opis:
A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.
Źródło:
Journal of Telecommunications and Information Technology; 2007, 3; 88-92
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
CIS, CIGS and CIBS thin film solar cells and possibilities of their application in BIPV
Autorzy:
Frydrychowicz-Jastrzębska, G.
Bugała, A.
Powiązania:
https://bibliotekanauki.pl/articles/97250.pdf
Data publikacji:
2016
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
solar cell
CIS
heterojunction
Light Soaking effect
BIPV
Opis:
Photovoltaic thin–film solar cells have gained more and more popularity in recent years. As well as high efficiency, they have a number of properties allowing their application in BIPV. The paper presents thin film copper indium diselenide cells (CuInSe2 – CIS) and their modifications. Their electric and optical properties are characterised. The subject of presentation includes phenomena, which take place in these solutions as well as issues related to selection of absorbing–generating layers and a window layer, including the possibilities of solving these issues to obtain high efficiency of photovoltaic conversion. At present, the photovoltaic conversion is already at the level of 22.3% in laboratory conditions [29]. The examples of roof and facade applications of CIS with regards to buildings are provided.
Źródło:
Computer Applications in Electrical Engineering; 2016, 14; 364-377
1508-4248
Pojawia się w:
Computer Applications in Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesized and characterization of pure and Er+3 doped ZnO nanoparticles by using laser ablation in ethanol
Autorzy:
Ismail, Raid A.
Habubi, Nadir F.
Powiązania:
https://bibliotekanauki.pl/articles/1191374.pdf
Data publikacji:
2016
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
AFM
Er doping
Heterojunction
XRD
Zinc Oxide
nanocollidal suspension
Opis:
Pulsed laser ablation in ethanol at room temperature with laser fluence 4.62 J/cm2 was employed to synthesize pure zinc oxide (ZnO) and Er- doped ZnO nanocolloidal suspension. The structural properties were determined by using x-ray diffraction (XRD) method and was confirmed its hexagonal wurtzite structure. The photoluminescence spectra (PL), AFM and FTIR measurement of the synthesized pure and Er-doped ZnO is carried out. The photoluminescence spectra measurements show that all the samples have ultraviolet emission and green emission and the surface granular morphology. The FTIR spectra indicate the existence of Zn-O, Er-O-Er and Er-O stretching modes. Al/ZnO/P-Si/Al and Al/Er-ZnO/P-Si/Al photodetectors hetrojunction has two peaks of response located at 650 nm for and 790 nm and the first peak shifted to 550nm for the doped hetrojunction with max sensitivity 0.7A/W. The maximum specific detectivity is 4.3×1012 W-1•cm•Hz-1 and 3×1012 W-1 •cm•Hz-1 for undoped and doped hetrojunctions respectively. The values of the built-in potentials 0.9 volt for Al/ZnO/P-Si/Al heterojunction and 0.6 volt for Al/Er-ZnO/P-Si/Al hetrojunction.
Źródło:
World Scientific News; 2016, 33; 67-78
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of selected parameters of SiGe HBT transistors
Autorzy:
Zaręba, A.
Jakubowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/309306.pdf
Data publikacji:
2000
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
heterojunction bipolar transistor
base transit time
current gain
Opis:
SiGe-base HBTs with Gaussian doping distribution are modeled including the effect of the drift field and variable Ge concentration in the base on the diffusion coefficient. Two different Ge distributions in the base are considered: a triangular one and a box one.
Źródło:
Journal of Telecommunications and Information Technology; 2000, 3-4; 15-18
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of ZnO/p-Si Heterojunction Solar Cell
Autorzy:
Habubi, Nadir F.
Mousa, Abdulazeez O.
Powiązania:
https://bibliotekanauki.pl/articles/1193961.pdf
Data publikacji:
2015
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
chemical spray pyrolysis
heterojunction solar cell
n-ZnO/p-Si
Opis:
Zinc oxide thin films was deposited by chemical spray pyrolysis (CSP) at 400 °C substrate temperature and different thickness (60, 80, and 100) nm on the texturized p-Si wafer to fabricate ZnO/p-Si heterojunction solar cell. Structural, optical, electrical and photovoltaic properties are investigated for the samples. XRD analysis reveals that all the as deposited ZnO films show polycrystalline structure, without any change due to increase of thickness. Average diameter calculated from AFM images shows an increase in its value with increasing thickness, ranging from 59.82-95.7 nm. The optical reflections for samples are measured using UV-Vis spectrophotometer. Photoluminescence (PL) spectra of (CSP) grown ZnO/p-Si with different thickness were used to study the energy gap. The electrical properties of heterojunction were obtained by I-V (dark and illuminated) and C-V measurement. I-V characteristic of the ZnO/p-Si heterojunction shows good rectifying behavior under dark condition. The ideality factor and the saturation current density was calculated. Under illuminated the photovoltaic measurements (open-circuit voltage (Voc), short-circuit current density (JSC), fill factor (FF), and quantum efficiencies are calculated for all samples. The built- in potential (Vbi), carrier concentration and depletion width are determined under different thickness from C-V measurement.
Źródło:
World Scientific News; 2015, 18; 78-92
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of the band structure diagram of semiconductor heterostructures applied in photovoltaics
Autorzy:
Bogaczewicz, Rafał Antoni
Popko, Ewa
Gwóźdź, Katarzyna Renata
Powiązania:
https://bibliotekanauki.pl/articles/1835761.pdf
Data publikacji:
2021
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
simulation
semiconductor
heterojunction
band diagram
n-ZnO/p-Si
Opis:
Recently it has been found that the heterostructures of n-ZnO/p-Si are promising photovoltaic alternatives to silicon homojunctions. It is well known that the energy band diagram of a heterostructure is crucial for the understanding of its operation. This paper analyzes the ZnO/p-Si heterostructure band by using free AMPS-1D computer program simulations. The obtained numerical results are compared with theoretical calculations based on the depletion region approximation model and the Poisson’s equation for electric potential. The results of the simulation are also compared with the experimental C-V characteristics of the test n-ZnO/p-Si heterostructure. The simulated C-V characteristics is qualitatively consistent with the experimental C-V curve, which confirms the correctness of the determined band diagram of the n-ZnO/p-Si heterostructure.
Źródło:
Optica Applicata; 2021, 51, 1; 135-145
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Si/ZnO nanorods with Ag nanoparticles/AZO heterostructures in PV applications
Autorzy:
Gwóźdź, K.
Płaczek-Popko, E.
Gumienny, Z.
Zielony, E.
Pietruszka, R.
Witkowski, B. S.
Wachnicki, Ł.
Gierałtowska, S.
Godlewski, M.
Chang, L. B.
Powiązania:
https://bibliotekanauki.pl/articles/201432.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
solar cells
ZnO
Si
heterojunction
nanorods
nanoparticles
ogniwa słoneczne
nanopręty
nanocząstki
Opis:
Our studies focus on test structures for photovoltaic applications based on zinc oxide nanorods grown using a low-temperature hydrothermal method on a p-type silicon substrate. The nanorods were covered with silver nanoparticles of two diameters – 20–30 nm and 50–60 nm – using a sputtering method. Scanning electron microscopy (SEM) micrographs showed that the deposited nanoparticles had the same diameters. The densities of the nanorods were obtained by means of atomic force microscope (AFM) images. SEM images and Raman spectroscopy confirmed the hexagonal wurtzite structure of the nanorods. Photoluminescence measurements proved the good quality of the samples. Afterwards an atomic layer deposition (ALD) method was used to grow ZnO:Al (AZO) layer on top of the nanorods as a transparent electrode and ohmic Au contacts were deposited onto the silicon substrate. For the solar cells prepared in that manner the current-voltage (I-V) characteristics before and after the illumination were measured and their basic performance parameters were determined. It was found that the spectral characteristics of a quantum efficiency exhibit an increase for short wavelengths and this behavior has been linked with the plasmonic effect.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 529-533
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of RF Magnetron Sputtered Nickel Oxide Thin Films as an Anode Buffer Layer in a P₃HT:PCBM Bulk Hetero-Junction Solar Cells
Autorzy:
Kim, Jwayeon
Ko, Yongkyu
Park, Kyeongsoon
Powiązania:
https://bibliotekanauki.pl/articles/1031015.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
P₃HT:PCBM bulk heterojunction solar cell NiO anode buffer layer
PEDOT:PSS anode buffer layer
Opis:
Bulk heterojunction solar cells were investigated using poly(3-hexylthiophene) (P₃HT):[6,6]-phenyl-C₆₁ butyric acid methyl ester (PCBM) with a nickel oxide (NiO) anode buffer layer between the photoactive layer and an indium tin oxide (ITO) anode layer. The NiO anode buffer layer was deposited using radio frequency magnetron sputtering on an ITO electrode layer for effective hole transport and electron blocking. The NiO film is a p-type semiconductor with resistivity of 0.35 Ω cm. The power conversion efficiency was improved substantially by the NiO anode buffer layer compared to a solar cell with an anode buffer layer made from poly(3,4-ethylenedioxythiophene) (PEDOT):poly(styrene sulfonate) (PSS). The solar cell with a 10 nm thick NiO anode buffer layer had a power conversion efficiency of 4.71%. These results are explained by the improved charge transport across the interface between the active layer and ITO electrode.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 887-891
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Area equivalent WKB Compact modeling approach for tunneling probability in Hetero-Junction TFETs including ambipolar behaviour
Autorzy:
Horst, Fabian
Farokhnejad, Atieh
Darbandy, Ghader
Iñíguez, Benjamín
Kloes, Alexander
Powiązania:
https://bibliotekanauki.pl/articles/397787.pdf
Data publikacji:
2018
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
TFET
tunneling probability
WKB approximation
heterojunction
compact modeling
closed-form
double-gate
DG
ambipolarity
modelowanie kompaktowe
dwubiegunowość
Opis:
This paper introduces an innovative modeling approach for calculating the band-to-band (B2B) tunneling probability in tunnel-field effect transistors (TFETs). The field of application is the usage in TFET compact models. Looking at a tunneling process in TFETs, carriers try to tunnel through an energy barrier which is defined by the device band diagram. The tunneling energy barrier is approximated by an approach which assumes an area equivalent (AE) triangular shaped energy profile. The simplified energy triangle is suitable to be used in the Wentzel-Kramers-Brillouin (WKB) approximation. Referring to the area instead of the electric field at individual points is shown to be a more robust approach in terms of numerical stability. The derived AE approach is implemented in an existing compact model for double-gate (DG) TFETs. In order to verify and show the numerical stability of this approach, modeling results are compared to TCAD Sentaurus simulation data for various sets of device parameters, whereby the simulations include both ON- and AMBIPOLAR-state of the TFET. In addition to the various device dimensions, the source material is also changed to demonstrate the feasibility of simulating hetero-junctions. Comparing the modeling approach with TCAD data shows a good match. Apart the limitations demonstrated and discussed in this paper, the main advantage of the AE approach is the simplicity and a better fit to TCAD data in comparison to the quasi-2D WKB approach.
Źródło:
International Journal of Microelectronics and Computer Science; 2018, 9, 2; 47-59
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Gas sensors based on metal oxide nanoparticles and their application for environmentally hazardous gases detection – a mini-review
Czujniki na bazie nanocząstek tlenków metali i ich zastosowanie w detekcji gazów niebezpiecznych dla środowiska
Autorzy:
Jońca, Justyna
Sówka, Izabela
Powiązania:
https://bibliotekanauki.pl/articles/24202693.pdf
Data publikacji:
2023
Wydawca:
Szkoła Główna Służby Pożarniczej
Tematy:
metal nanoparticles
metal oxide nanoparticles
heterojunction
gas sensors
hazardous gases
nanocząstki metali
nanocząstki tlenków metali
heterozłącze
czujniki gazu
gazy niebezpieczne
Opis:
Hazardous gases have adverse effects on living organisms and the environment. They can be classified into two categories, i.e. toxic gases (e.g. H2 S, SO2 , CO, NO2 , NO and NH3 ) and greenhouse gases (e.g. N2 O, CH4 and CO2 ). Moreover, their presence in confined areas may lead to fire accidents, cause serious health problems or even death. Therefore, monitoring of these substances with gas sensors allows assessing the quality of the atmosphere, helps avoiding accidents and saves lives. Metal oxide semiconductor gas sensors (MOS) are one of the most popular choices for these applications owing to their numerous advantages, i.e. high sensitivity, long lifetime and short response time. However, these devices have their limitations as well. They exhibit baseline drift, sensor poisoning and poor selectivity. Although much has been done in order to deal with those problems, the improvement of MOS sensors continues to attract researchers’ attention. The strict control of gas sensing materials preparation is one of the approaches that helps to improve MOS sensors performance. Nanomaterials have been found to be more suitable candidates for gas detection than materials designed at microscale. Moreover, it was found that the regular and ordered morphology of metal oxide nanostructures, their loading with noble metals, or the formation of heterojunctions can exert additional influence on the properties of these nanostructures and improve their gas sensing performance, which will be described in the following sections of this paper. Following a discussion of the operation principle of MOS sensors, a comprehensive review of the synthesis and application of metal oxide nanoparticles in the construction of the MOS sensors dedicated for environmentally hazardous gases is presented. The paper discusses also present issues and future research directions concerning application of nanotechnology for gas sensing.
Niebezpieczne gazy mają niekorzystny wpływ na organizmy żywe i środowisko. Zaliczamy do nich gazy toksyczne (np. H2 S, SO2 , CO, NO2 , NO i NH3 ), gazy cieplarniane (np. N2 O, CH4 i CO2 ). Co więcej, ich obecność w zamkniętych pomieszczeniach może doprowadzić do pożarów, spowodować poważne problemy zdrowotne, a nawet doprowadzić do śmierci. Monitorowanie tych substancji za pomocą czujników gazowych może pomóc uniknąć wypadków i uratować życie. Półprzewodnikowe czujniki gazowe na bazie tlenków metalu (MOS) są jednymi z najpopularniejszych w tych zastosowaniach ze względu na swoje liczne zalety, takie jak wysoka czułość, długa żywotność i krótki czas odpowiedzi. Urządzenia te mają również swoje ograniczenia, tj. wykazują dryft odpowiedzi w czasie, mogą ulec dezaktywacji i charakteryzują się słabą selektywnością, dlatego nadal prowadzone są badania nad poprawą parametrów czujników MOS. Ścisła kontrola procesu przygotowania materiałów czułych jest jedną z metod pozwalających na poprawę wydajności czujników MOS. Stwierdzono, że nanomateriały są bardziej odpowiednie do wykrywania gazów niż ich odpowiedniki zaprojektowane w mikroskali. Stwierdzono również, że regularna i uporządkowana morfologia nanostruktur tlenków metali, pokrywanie ich nanocząstkami metali szlachetnych lub tworzenie heterozłączy może poprawiać skuteczność wykrywania gazów. W przedstawionej pracy dokonano przeglądu metod syntezy i zastosowania nanocząstek tlenków metali w konstrukcji czujników gazów niebezpiecznych dla środowiska. W artykule omówiono również aktualne problemy i przyszłe kierunki badań nad zastosowaniem nanotechnologii do detekcji gazów.
Źródło:
Zeszyty Naukowe SGSP / Szkoła Główna Służby Pożarniczej; 2023, 85; 7-27
0239-5223
2720-0779
Pojawia się w:
Zeszyty Naukowe SGSP / Szkoła Główna Służby Pożarniczej
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-12 z 12

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