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Wyszukujesz frazę "HOT detectors" wg kryterium: Temat


Wyświetlanie 1-3 z 3
Tytuł:
Modeling of HgCdTeLWIR detector for high operation temperature conditions
Autorzy:
Martyniuk, P.
Gawron, W.
Madejczyk, P.
Rogalski, A.
Piotrowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/220771.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
HgCdTe
IR detector
Auger suppression
HOT detectors
Opis:
The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.
Źródło:
Metrology and Measurement Systems; 2013, 20, 2; 159-170
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors
Autorzy:
Rogalski, Antoni
Kopytko, Małgorzata
Martyniuk, Piotr
Hu, Weida
Powiązania:
https://bibliotekanauki.pl/articles/1818250.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
2D material photodetectors
HOT infrared detectors
HgCdTe photodiodes
p-i-n depleted photodiodes
BLIP performance
Opis:
The semiempirical rule, “Rule 07” specified in 2007 for P-on-n HgCdTe photodiodes has become widely popular within infrared community as a reference for other technologies, notably for III-V barrier photodetectors and type-II superlattice photodiodes. However, in the last decade in several papers it has been shown that the measured dark current density of HgCdTe photodiodes is considerably lower than predicted by benchmark Rule 07. Our theoretical estimates carried out in this paper support experimental data. Graphene and other 2D materials, due to their extraordinary and unusual electronic and optical properties, are promising candidates for high-operating temperature infrared photodetectors. In the paper their room-temperature performance is compared with that estimated for depleted P i-N HgCdTe photodiodes. Two important conclusions result from our considerations: the first one, the performance of 2D materials is lower in comparison with traditional detectors existing on global market (InGaAs, HgCdTe and type- II superlattices), and the second one, the presented estimates provide further encouragement for achieving low-cost and high performance HgCdTe focal plane arrays operating in high-operating temperature conditions.
Źródło:
Opto-Electronics Review; 2020, 28, 2; 82--92
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors
Autorzy:
Rogalski, A.
Kopytko, M.
Martyniuk, P.
Hu, W.
Powiązania:
https://bibliotekanauki.pl/articles/201444.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
colloidal quantum dot infrared photodetectors
HOT infrared detectors
HgCdTe photodiodes
p-i-n depleted photodiodes
BLIP performance
Opis:
In the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct coating on silicon electronics for imaging, which potentially reduces array cost and offers new modifications like flexible infrared detectors. The performance of CQD high operating temperature (HOT) photodetectors is lower in comparison with detectors traditionally available on the global market (InGaAs, HgCdTe and type-II superlattices). In several papers their performance is compared with the semiempirical rule, “Rule 07” (specified in 2007) for P-on-n HgCdTe photodiodes. However, at present stage of technology, the fully-depleted background limited HgCdTe photodiodes can achieve the level of room-temperature dark current considerably lower than predicted by Rule 07. In this paper, the performance of HOT CQD photodetectors is compared with that predicted for depleted P-i-N HgCdTe photodiodes. Theoretical estimations are collated with experimental data for both HgCdTe photodiodes and CQD detectors. The presented estimates provide further encouragement for achieving low-cost and high performance MWIR and LWIR HgCdTe focal plane arrays operating in HOT conditions.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 4; 845-855
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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