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    Tytuł:
    FET input voltage amplifier for low frequency noise measurements
    Autorzy:
    Achtenberg, Krzysztof
    Mikołajczyk, Janusz
    Bielecki, Zbigniew
    Powiązania:
    https://bibliotekanauki.pl/articles/221854.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    low noise amplifier
    low frequency noise measurements
    field effect transistors
    FET voltage noise
    FET input amplifier
    Opis:
    The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was built using two stages of an op amp trans impedance amplifier. To reduce voltage noise, eight-paralleled low noise discrete JFETs were used in the first stage. The designed amplifier was then compared to commercial ones. Its measured value of voltage noise spectral density is around 24 nV/√Hz, 3 nV/√Hz, 0.95 nV/√Hz and 0.6 nV/√Hz at the frequency of 0.1, 1, 10 and 100 Hz, respectively. A -3dB frequency response is from ~20 mHz to ~600 kHz.
    Źródło:
    Metrology and Measurement Systems; 2020, 27, 3; 531-540
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Afanasij Fet w krytyce zachodniej
    Afanasy Fet in Western studies
    Autorzy:
    Dziedzic, Joanna
    Powiązania:
    https://bibliotekanauki.pl/articles/482519.pdf
    Data publikacji:
    2012-12-01
    Wydawca:
    Uniwersytet Warmińsko-Mazurski w Olsztynie
    Tematy:
    Afanasy Fet
    philosophical tradition of the West
    Opis:
    The article described the principal (in authors opinion) trends in Western studies of creativi- ty Afanasy Fet, such as versification, specificity of poetic language, the relationship the Russian poet with literary and philosophical tradition of the West (especially the poetry of the French symbolists and impressionists, as well as with the doctrine of Schopenhauer).
    Źródło:
    Acta Polono-Ruthenica; 2012, 1, XVII; 19-26
    1427-549X
    Pojawia się w:
    Acta Polono-Ruthenica
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Славянские мотивы в лирике тютчевской плеяды
    Slavic motives in the lyrics of Tyutchefs pleiad
    Autorzy:
    Dmitrovskiy, Aleksei
    Powiązania:
    https://bibliotekanauki.pl/articles/481877.pdf
    Data publikacji:
    2006-12-01
    Wydawca:
    Uniwersytet Warmińsko-Mazurski w Olsztynie
    Tematy:
    Fyodor Tyutchev
    Russian romanticism
    Aleksey Konstantinovich Tolstoy
    Polonsky;Fet;Maikov
    Opis:
    Slavonic motives in lyric poetry of the late Russian romanticism - Tyutchev, A.K. Tolstoy, Polonsky, Fet, Maikov - are in the predominant importance of philosophical and historical as well as political views of Tyutchev. The development of these views from national and historical problems to the problems of ethos and novelist; and expansion of historical topics ranging from the Russian-Polish to the south-slavonic heritage. The development of genre from oratory monologue to the wide spectrum of lyrical and lyric-epic composition and up to folklore stylization.
    Źródło:
    Acta Polono-Ruthenica; 2006, 1, XI; 29-37
    1427-549X
    Pojawia się w:
    Acta Polono-Ruthenica
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hydrogen sensor based on field effect transistor with C–Pd layer
    Autorzy:
    Firek, Piotr
    Krawczyk, Sławomir
    Wronka, Halina
    Czerwosz, Elżbieta
    Szmidt, Jan
    Powiązania:
    https://bibliotekanauki.pl/articles/220688.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    FET
    C-Pd layer
    hydrogen sensor
    field effect transistor
    Opis:
    ISFET (Ion Sensitive Field Effect Transistors) microsensors are widely used for pH measurements as well as analytical and biomedical applications. At the same time, ISFET is a good candidate for testing various materials for their applications in sensitive membranes. For example, hydrogen sensitive carbonaceous films containing Pd nanocrystallites (C-Pd) make this material very interesting for sensor applications. A cost effective silicon technology was selected to fabricate n-channel transistors. The structures were coupled to specially designed double-sided PCB (Printed Circuit Board) holder. The holder enables assembly of the structure as part of an automatic stand. The last step of production of MIS structures was deposition of the C-Pd layer. The C-Pd films were fabricated by the Physical Vapor Deposition (PVD) method in which C60 and palladium acetate were evaporated. Electrical resistance of structures with C-Pd films was measured during their interaction with hydrogen. Finally, a new type of highly sensitive FET hydrogen sensor with C-Pd layer was demonstrated and characterized.
    Źródło:
    Metrology and Measurement Systems; 2020, 27, 2; 313-321
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    E-mail, E-papier E-skóra ?
    E-mail, E-paper, E-skin ?
    Autorzy:
    Łapkowski, M.
    Jarosz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1217315.pdf
    Data publikacji:
    2012
    Wydawca:
    Stowarzyszenie Inżynierów i Techników Przemysłu Chemicznego. Zakład Wydawniczy CHEMPRESS-SITPChem
    Tematy:
    e-skóra
    tranzystory polowe
    czujniki ciśnienia
    e-skin
    organic-FET
    pressure sensor
    Opis:
    Przeszczepianie skóry jest zagadnieniem znanym już na dwa i pół tysiąca lat przed naszą erą, kiedy to przeprowadzano pierwsze eksperymenty z jej zakresu. Najnowszymi owocami tej dziedziny jest tzw. e-skóra - membrana wrażliwa na nacisk. Ostatnimi czasy ogłoszono powstanie dwóch jej modeli, autorstwa niezależnych zespołów naukowców. Artykuł opisuje ich budowę oraz zasadę funkcjonowania, a także opracowany wcześniej czujnik ciśnienia, który mógł stanowić inspirację dla twórców e-skóry.
    The first experiments that gave birth to the discipline of skin grafting date back to two and a half millennia B.C. The most recent fruit of this branch of science is e-skin - a pressure-sensitive membrane. Lately, the completion of two models of such a membrane by independent research teams has been announced. The article describes the construction and the operating principles of those models, as well as a pressure sensor that has been developed before them and might have served as a source of inspiration for the creators of the e-skin.
    Źródło:
    Chemik; 2012, 66, 2; 119-122
    0009-2886
    Pojawia się w:
    Chemik
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Graphene-based Current Mode Logic Circuits : a Simulation Study for an Emerging Technology
    Autorzy:
    Abdollahi, Hassan
    Hooshmand, Reza
    Owlia, Hadi
    Powiązania:
    https://bibliotekanauki.pl/articles/226818.pdf
    Data publikacji:
    2019
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    current mode logic (CML)
    graphene
    graphene FET
    low-power design
    Opis:
    In this paper, the usage of graphene transistors is introduced to be a suitable solution for extending low power designs. Static and current mode logic (CML) styles on both nanoscale graphene and silicon FINFET technologies are compared. Results show that power in CML styles approximately are independent of frequency and the graphene-based CML (G-CML) designs are more power-efficient as the frequency and complexity increase. Compared to silicon-based CML (Si-CML) standard cells, there is 94% reduction in power consumption for G-CML counterparts. Furthermore, a G-CML 4-bit adder respectively offers 8.9 and 1.7 times less power and delay than the Si-CML adder.
    Źródło:
    International Journal of Electronics and Telecommunications; 2019, 65, 3; 381-388
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Historia tranzystora polowego, początki i geneza powstania
    The history of field effect transistor, beginning and origins
    Autorzy:
    Czupryniak, J.
    Namirowska, P.
    Ossowski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/134813.pdf
    Data publikacji:
    2017
    Wydawca:
    ADVSEO
    Tematy:
    field effect transistor
    FET
    MOSFET
    unipolar
    N-type channel
    P-type channel
    gateway
    Opis:
    Automation diagnostic methods and techniques of environmental monitoring combined with higher precision, sensitivity and selectivity of the currently available detection methods evokes a growing interest of medicine and medical diagnostics to produce the miniaturized diagnostic devices and technology which enable automation of medical procedures. Application of different sensors including chemical ones for detecting substance such as: peptides, proteins, ions, heavy metals in biological systems in which is low concentration of analyte is observed, forces us to use a miniaturized chemical nanosensors with high sensitivity and selectivity. This type of sensors are FET, ISFET and MOSFET. The nano-diagnostic devices with ability of molecular recognition that’s today's world most important analytical challenge for designers and chemists in order to obtain rapid and cheap diagnostic methods. In this paper we present the principle of FET and the genesis of the measuring system.
    Źródło:
    Technical Issues; 2017, 1; 28-33
    2392-3954
    Pojawia się w:
    Technical Issues
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Adaptive EPFL-EKV Long and Short Channel MOS Device Models for Qucs, SPICE and Modelica Circuit Simulation
    Autorzy:
    Brinson, M. E.
    Nabijou, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/398007.pdf
    Data publikacji:
    2012
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    model adaptacyjny MOS
    Qucs
    SPICE
    Modelica
    monitoring parametru
    adaptive MOS models
    equation-defined device modelling
    Verilog-A
    EPFL-EKV MOS-FET model
    parameter and equation monitoring
    EPFL-EKV MOS-FET
    Opis:
    Equation-defined non-linear functional elements are important building blocks in the development of compact semiconductor device models. Current trends in compact device modelling suggest widespread acceptance among the modeling community of Verilog-A, for semiconductor device specification, model exchange and circuit simulation. This paper outlines techniques for the development of adaptive EPFL-EKV long and short channel MOS models which stress user selectable model features and diagnostic capabilities. Adaptive EPFL-EKV nMOS models based on Verilog-A and Modelica are introduced and their performance compared with simulation data obtained using the "Quite universal circuit simulator" (Qucs), SPICE and the Modelica simulation environment.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2012, 3, 1; 1-6
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A 100 W ISM 2.45 GHz-band power test system
    Autorzy:
    Wojtasiak, W.
    Gryglewski, D.
    Gwarek, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/307777.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    microwave precise heating
    high power solid-state amplifier
    push-pull GaAs FET
    synthetsizer
    power measurement unit
    Opis:
    This paper describes development of solid-state microwave power test system (MPTS) operating over 2.3 to 2.6 GHz with the output power level of 100 W for industrial applications in material processing, and for designing of microwave power industrial equipment. The MPTS unit consists of four major parts: PLL synthesizer, high power solid-state amplifier, detector probes for return losses and leakage measurement and microcontroller. The MPTS system is able to operate in either single fixed-frequency regime, or in swept mode with self-tuning for minimum reflection of a heated load.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 2; 23-28
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Design of multichannel readout system for spectral identification of materials
    Autorzy:
    Kołaciński, C.
    Obrębski, D.
    Zbieć, M.
    Zagrajek, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/397795.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    terahertz spectroscopy
    terahertz FET-based detector
    chopper amplifier
    integrated readout circuit
    readout system
    AVR ATMega
    spektroskopia terahercowa
    wzmacniacz przerywacz
    obwód scalony
    obwód odczytujący
    Opis:
    This paper addresses the work performed on development of the readout circuits for FET-based THz detectors. Ultimately, designed readout system is intended to work within the material identification equipment, which targeted to perform the spectral recognition of samples. At the beginning, the short introduction of the THz detection basics and main applications of the THz spectroscopy are presented. Next, the preceding work on single-channel readout circuit is shortly recalled, with a special emphasis on the last design version featuring selective chopper amplifier. This IC became the basis of the complete readout system addressed in next few sections of this paper. Finally, design of novel integrated circuit is presented, incorporating the multichannel readout circuit dedicated for pixel line.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2015, 6, 2; 35-42
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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