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Wyszukujesz frazę "Conductive thin film" wg kryterium: Temat


Wyświetlanie 1-3 z 3
Tytuł:
Development of Electrically Conductive Nanocrystalline Thin Film for Optoelectronic Applications
Autorzy:
Das, S K.
Islam, J. M. M.
Hasan, M.
Kabir, H.
Gafur, Md. A.
Hoque, E.
Khan, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/412543.pdf
Data publikacji:
2013
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Conductive thin film
Composite
TiO2
Solar cell
Optoelectronics
Sodium alginate
Opis:
Sodium alginate (TiO2) sand composites were prepared by solution casting. Purified sand was added in the composite films to increase electrical conductivity. Electrical properties such as conductivity, capacitance, dielectric constant, and loss tangent of the composites were investigated. The current voltage characteristics for all the composites showed ohmic behavior. All the electrical properties have been found to improve with the incorporation of sand (SiO2) but 6 % sand containing composite exhibits the best electrical properties. The mechanical properties tensile strength (TS), elongation at break (Eb) and Young modulus for 6 % sand containing composite film are found to be 4.445 MPa, 9.76 %, and 72.8 MPa respectively. The experimental results reveal that the blended films exhibit higher stability and improved mechanical properties of both tensile strength and elongation at break in dry state. Water absorption properties of the composites are found to decrease with the increase of sand content. Lowest water uptake properties and highest stability were demonstrated by 6 % sand containing sample. Electrically conductive composite films have useful applications for solar cells and optoelectronics. Thus, this study is very much expected to aid in the design and selection of proper composite for the potential application of solar cell and optoelectronics.
Źródło:
International Letters of Chemistry, Physics and Astronomy; 2013, 10, 1; 90-101
2299-3843
Pojawia się w:
International Letters of Chemistry, Physics and Astronomy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of ZnO:Al layers for applications in thin film solar cells
Autorzy:
Zdyb, A.
Krawczak, E.
Lichograj, P.
Powiązania:
https://bibliotekanauki.pl/articles/173619.pdf
Data publikacji:
2016
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
transparent conductive oxide
magnetron sputtering
thin film solar cell
Opis:
Thin films of zinc oxide doped with aluminium were obtained by using the magnetron sputtering technique on glass substrates. The changes in magnetron power influence the structural, optical and electrical properties of the ZnO:Al layers. The deposited films are characterized by very good homogeneity and high optical transmission. Thicker films with larger agglomerates on the surface exhibit lower resistivity with the remaining good transparency.
Źródło:
Optica Applicata; 2016, 46, 2; 181-185
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Indium-gallium-zinc oxide thin-film preparation via single-step radio frequency sputter deposition using mixed-oxide powder targets
Autorzy:
Satake, Takahiko
Kawasaki, Hiroharu
Aoqiu, Shin-Ichi
Powiązania:
https://bibliotekanauki.pl/articles/24202734.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Czasopisma i Monografie PAN
Tematy:
In–Ga–Zn–O thin-film
plasma processes
powder target
sputtering deposition
transparent conductive film
Opis:
Indium gallium zinc oxide (In–Ga–Zn–O) thin films, which are transparent conductive films for liquid crystals and electroluminescent displays, were fabricated via singlestep sputter deposition using one target containing different proportions of indium oxide, gallium oxide, and zinc oxide powders. Experimental results suggest that the In–Ga–Zn–O thin films can be prepared using the method of single-step radio frequency (RF) sputter deposition, applying a powder target containing indium oxide, gallium oxide, and zinc oxide. The In–Ga–Zn–O thin films were prepared on Si substrates, and the deposition rate depended on the target composition. In these plasma processes, electron density and temperature were essentially independent of target composition. The prepared films were very smooth with a root-mean-square roughness of less than 10 nm. The crystallinity of the ZnO peak was observed in all the films; whereas the In and Ga peaks were not observed in the films prepared. The X-ray photoelectron spectroscopy of the films also revealed that the elemental concentration ratio of In–Ga–Zn–O thin films could be prepared using one target, and that can be easily controlled by ratios in the In2O3/Ga2O3/ZnO composition in the powder target. The transmittances were > 75% at 800 nm for all the target mixtures, and increased with increasing In2O3 in the powder target.
Źródło:
Archives of Electrical Engineering; 2023, 72, 2; 555--563
1427-4221
2300-2506
Pojawia się w:
Archives of Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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