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Wyświetlanie 1-15 z 15
Tytuł:
Iron and Aluminium Removal from Algerian Silica Sand by Acid Leaching
Autorzy:
Anas Boussaa, S.
Kheloufi, A.
Boutarek Zaourar, N.
Bouachma, S.
Powiązania:
https://bibliotekanauki.pl/articles/1031135.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.jj
Opis:
This work refers to a process of purification of silica sand and, more particularly, to a process of iron and aluminium removal from the Algerian silica sand particles. Iron compounds are among the most difficult impurities to release from the sand particles. Several methods to remove iron from the sand particles are used; in our work we employed the acid leaching process as optimal solution to purify the silica sand. To this purpose, our work began by characterization of sand samples using X-ray fluorescence, for measurement of concentrations of major mineral oxides, and using atomic absorption, to determine the iron and aluminium concentrations in the silica sand particles. Through this study, the samples were enriched by acid leaching method, by removing the impurities from the crystal lattice, as well as from its surface. Thus reduction the impurities concentration increases, at the same time, the SiO₂ concentration. The obtained enriched silica can be used as raw material for silicon production, destined for photovoltaic application.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 1082-1086
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Valorization of Algerian sand for photovoltaic application
Autorzy:
Anas Boussaa, S.
Kheloufi, A.
Boutarek Zaourar, N.
Kerkar, F.
Powiązania:
https://bibliotekanauki.pl/articles/1068258.pdf
Data publikacji:
2016-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.jj
Opis:
Extracting quartz from sand, as well as extracting silicon from quartz requires knowledge of the physical and chemical properties of quartz found in the sand. In this work the chemical composition, the crystallographic phase, crystal system, space group, unit cell parameters, the absorption bands, the granulometric analysis and the microscopic observations of quartz in the sand from Mostaganem (Algeria) region have been carried out using X-ray fluorescence, X-ray diffraction, infrared spectroscopy, sifting, optical and scanning electron microscopy in order to determine the rate and the nature the crystallinity of its various components and to discover a layer rich in silica, containing a sufficient reserve to feed a unit manufacturing pure silicon starting from silica. The study is driven by current economic importance of the silicon application in the field of photovoltaic solar cells. The X-ray fluorescence indicates that Mostaganem sand has got a very good purity (99.5% silica). The crystallographic parameters of Mostaganem sand have been determined through analysis of X-ray diffraction. The following parameters were found, hexagonal crystal system, space group P3221, unit cell parameters: a=b=4.9030 Å, c=5.3999 Å. The infrared absorption spectrum of studied sand exhibits absorption bands characterizing the SiO₂ compound, due to Si-O-Si and Si-O aggregates and others. The granulometric analysis determines the percentage of the various fraction of the grain. The microscopy observation gives the shape of the grain. The results show finally that Mostaganem sand has got good proprieties for the photovoltaic application.
Źródło:
Acta Physica Polonica A; 2016, 130, 1; 133-137
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication of pyramid/nanowire binary structure on n-type silicon using chemical etching
Autorzy:
Si Ahmed, Y.
Hadjersi, T.
Chaoui, R.
Powiązania:
https://bibliotekanauki.pl/articles/1068526.pdf
Data publikacji:
2016-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.jj
Opis:
A pyramid and nanowire binary structure of n-type monocrystalline silicon surface was fabricated by two-step chemical etching process. The nanowire surface is formed by electroless etching in HF-AgNO₃ aqueous solution after being textured in KOH/IPA solution. Optical absorption was compared between this structure and that of random pyramid arrays. The effective reflectance calculated between 400 and 1100 nm decreased from ≈ 40% to ≈ 15% after pyramidal texturing and ≈ 4% after formation of vertically aligned nanowires with a length less than 1 μ m. This simple and low-cost surface structuring technique holds high potential for the manufacture of terrestrial silicon solar cells with reduced optical losses.
Źródło:
Acta Physica Polonica A; 2016, 130, 1; 385-387
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Si Photovoltaic Semiconductor Devices Operating in Total and Partial Illumination
Autorzy:
Leţ, D.
Cimpoca, V.
Stancu, A.
Fluieraru, C.
Bacinschi, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1490751.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.H-
88.40.jj
88.40.fc
Opis:
Power photovoltaic applications, as photovoltaic power plants or building integrated photovoltaic systems, are mainly built using parallel or serial photovoltaic modules strings. Daily usage of such systems usually produces non-uniform string connected behavior due to partial or total shading. In these conditions, less illuminated cells transform into power receivers, thus producing supplementary losses and local panel heating. This phenomenon, called hot-spot, may evolve into producing zonal or total destruction of the solar modules. For these purposes this paper will submit to your attention simulation and experimental results of the partial and total illumination phenomenon, targeting specific information in the effect evaluation of any photovoltaic panel.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 65-67
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Electromotive Force Dependence on the Polycrystalline Silicon Solar Cell Illuminance
Autorzy:
Jukna, A.
Miškinis, P.
Valuntaitė, V.
Bogdanovičius, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400558.pdf
Data publikacji:
2015-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.H-
88.40.jj
88.40.hj
88.40.fc
Opis:
The impact of illuminance on changes of the solar cell electromotive force is analyzed. A mathematical model for a solar cell electromotive force dependence on illuminance is presented. For this purpose, a selection of experimental data trend function was carried out, and the Pearson correlation coefficients were established. The most optimal results were obtained in case of an exponential function with the strongest correlation ($R^2$=0.983). The analysis has shown that at 100 W/m^2 illuminance the electromotive force saturation is obtained (the electromotive force changes insignificantly and fluctuates at around 2 V), which indicates that upon reaching such an illuminance a solar cell operates at maximum efficiency. A first-order differential equation satisfied by the trend function has been compiled. When interpreting illuminance as an evolution variable, the proposed mathematical model can be interpreted as a dynamical system. The deviation frequency spectrum of the measurement values with respect to the theoretical prediction is analyzed.
Źródło:
Acta Physica Polonica A; 2015, 127, 6; 1711-1716
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Design of Solar Cells p⁺/n Emitter by Spin-On Technique
Autorzy:
El Amrani, A.
Boucheham, A.
Belkacem, Y.
Boufenik, R.
Boudaa, M.
Powiązania:
https://bibliotekanauki.pl/articles/1031365.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.KK
88.40.JJ
85.40.Ry
Opis:
In this paper spin-on dopant diffusion has been investigated as a technique for fabrication of p⁺/n monocrystalline silicon solar cell emitters. A homogeneous spreading onto the front wafer surface has been achieved by using 2 ml of boron-dopant solution and three-step spin-profile. Study of the wafers stacking arrangement has revealed that the highest doping level and the best emitter sheet resistance uniformity were obtained using the back-to-back wafers arrangement. The N₂/O₂ gas ratio variation during the diffusion process has shown that a higher percentage of nitrogen yields a slightly lower emitter sheet resistance. Study on temperature dependence of as-processed emitter resistivity revealed that 910°C results in targeted sheet resistance of around 48 Ω/sq. Using these preliminary experimental results, a batch of 6 silicon wafers was processed. After BSG and BRL chemical removal, the batch average sheet resistance of the emitter was 49.50 Ω/sq. The uniformity of a wafer and of the batch was below 7% and 13%, respectively. The ECV and SIMS depth profiling have shown the electrically active and the total boron surface concentration of 1.5× 10²⁰ atoms/cm³ and 2.5× 10²⁰ atoms/cm³, respectively. The junction depth was around 0.3 μm. Finally, by increasing the oxygen flow rate we reached an average sheet resistance of 51 Ω/sq. and a junction depth of 0.35 μm.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 717-719
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of degradation of electrical properties after thermal oxidation of p-type Cz-silicon wafers
Autorzy:
Maoudj, M.
Bouhafs, D.
Bourouba, N.
Khelifati, N.
El Amrani, A.
Boufnik, R.
Hamida Ferhat, A.
Powiązania:
https://bibliotekanauki.pl/articles/1054957.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
81.16.Pr
88.40.jj
Opis:
In this study we conducted thermal oxidation of Czochralski p-type <100> silicon wafers. The oxidation was carried out at temperatures in the range of 850-1000°C, in a gas mixture of N₂:O₂, in order to deposit a thin layer (10 nm) of thermal silicon dioxide (SiO₂), generally used in the surface passivation of solar cells. The measurements of effective minority carriers lifetime τ_{eff} using the quasi-steady-state photoconductance have shown degradation of different samples after oxidation process. The calculation of surface recombination velocity after the oxidation process at different temperatures, gave the same value of 40 cm s¯¹, showing a low surface recombination velocity and, therefore, a good surface passivation. Finally, a study based on sample illumination technique, allowed us to conclude that our samples are dominated by bulk Shockley-Read-Hall recombination, caused by Fe-related centers, thereby causing the degradation of the lifetime of minority carriers.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 725-727
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process
Autorzy:
Tejero, A.
Tupin, E.
González, M.
Martínez, O.
Jiménez, J.
Belouet, C.
Baillis, C.
Powiązania:
https://bibliotekanauki.pl/articles/1198416.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Am
61.72.Ff
88.40.jj
Opis:
In the silicon ribbon on a sacrificial template process silicon is deposited on both sides of a carbon ribbon, thus forming a Si/carbon/Si trilayer. The fast cooling of the ribbon in large temperature gradients generates stresses that are detrimental to both the electrical performance and the mechanical behaviour of the wafers. The assessment of the stresses is crucial for the setting-up of thermal treatments allowing for the stress relaxation of the wafers, prior to the cell fabrication. We present an analysis of the stress in the as-grown trilayer by a simulation of the thermomechanical behaviour of the cooling ribbon. Experimental measurements of the stress in as-grown and annealed trilayers are also presented. The results permit to establish the conditions for optimized growth and annealing.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1006-1009
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Residual Strain and Electrical Activity of Defects in Multicrystalline Silicon Solar Cells
Autorzy:
Martínez, O.
Mass, J.
Tejero, A.
Moralejo, B.
Hortelano, V.
González, M.
Jiménez, J.
Parra, V.
Powiązania:
https://bibliotekanauki.pl/articles/1198419.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Am
61.72.Ff
88.40.jj
Opis:
The growth process by casting methods of multi-crystalline Si results in a crystalline material with, among other defects, a high density of dislocations and grain boundaries. Impurity incorporation and their gathering around grain boundaries and dislocations seem to be the main factor determining the electrical activity of those defects, which limit the minority carrier lifetime. In this work, we analyze multi-crystalline Si samples by combining etching processes to reveal the defects, Raman spectroscopy for strain measurements, and light beam induced current measurements for the localization of electrically active defects. In particular, we have explored the etching routes capable to reveal the main defects (grain boundaries and dislocation lines), while their electrical activity is studied by the light beam induced current technique. We further analyze the strain levels around these defects by Raman micro-spectroscopy, aiming to obtain a more general picture of the correlation between residual stress and electrical activity of the extended defects. The higher stress levels are observed around intra-grain defects associated with dislocation lines, rather than around the grain boundaries. On the other hand, the intra-grain defects are also observed to give dark light beam induced current contrast associated with a higher electrical activity of these defects as compared to the grain boundaries.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1013-1016
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of p-Layer Doping Density and Surface Band Bending on the Indium Tin Oxide/Hydrogenated Amorphous Silicon Heterojunction Solar Cells
Autorzy:
Rached, D.
Madani Yssad, H.
Powiązania:
https://bibliotekanauki.pl/articles/1398948.pdf
Data publikacji:
2015-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Jc
71.20.Mq
88.40.hj
88.40.jj
Opis:
A solar cell (indium tin oxide (ITO)/p-doped amorphous silicon (p-a-Si:H)/intrinsic polymorphous silicon (i-pm-Si:H)/n-doped crystalline silicon (n-c-Si)) simulation, focused on p-layer doping density NA and surface band bending $E_\text{sbb}$ at the interface ITO/p-layer has been performed. Despite the deterioration of p-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase of p-layer doping density NA and contact barrier height $\phi_{b0}$ (variation of the surface band bending $E_\text{sbb}$) leads to an increase of the efficiency of heterojunction with intrinsic thin layer solar cells.
Źródło:
Acta Physica Polonica A; 2015, 127, 3; 767-769
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimized Temperature in Phosphorous Diffusion Gettering Setup of Chromium Transition Metal in Solar Grade Multicrystalline p-Type Silicon Wafer
Autorzy:
Bouhafs, D.
Khelifati, N.
Kouhlane, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1398753.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.jj
81.05.Bx
81.65.Tx
87.15.Pc
Opis:
We have investigated in this work the effect of the temperature profile during homogeneous phosphorous diffusion gettering (PDG) on multicrystalline (mc-Si) silicon p-type wafers destined for photovoltaic solar cells. Temperatures were varied from 800°C to 950°C with time cycle of 90 minutes. Phosphorous profile of n⁺p junction was measured by secondary ion mass spectroscopy (SIMS) from 0.45 μm to 2.4 μm. Chromium concentration profile measured on the same samples by SIMS shows a high accumulated concentration of Cr atoms in the gettering layer at 900°C and 950°C, compared to samples obtained at 800°C and 850°C. The effective lifetime $(\tau_\text{eff})$ of minority charge carriers characterized by quasi-steady state photoconductance (QSSPC) is in correlation with these results. From the QSSPC measurements we have observed an amelioration of $\tau_\text{eff}$ from 7 μs before PDG to 26 μs in the samples after PDG, processed at 900°C. This indicates the extraction of a non-negligible concentration (5×10¹⁴ cm¯³ to 5×10¹⁵ cm¯³) of Cr from the bulk to the surface gettering layer, as observed in the chromium SIMS profiles. A light degradation of $\tau_\text{eff}$ (18 μs) is observed in the samples treated at 950°C due probably to a partial dissolution of the metallic precipitates, especially at the grain boundaries and in the dislocations vicinity. The related $\tau_\text{Cr-Impurity}$ lifetime value of about 8.5 μs is extracted, which is the result of interstitial $Cr_{i}$ or $Cr_{i}B_{s}$ pairs, proving their strongest recombination activity in silicon.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 690-693
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing
Autorzy:
Prucnal, S.
Shumann, T.
Skorupa, W.
Abendroth, B.
Krockert, K.
Möller, H.
Powiązania:
https://bibliotekanauki.pl/articles/1503796.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.jj
78.55.-m
78.30.Am
78.55.Ap
Opis:
Phosphorus ion implantation was used for the emitter formation in mono- and multicrystalline silicon solar cells. After ion implantation the silicon is strongly disordered or amorphous within the ion range. Therefore subsequent annealing is required to remove the implantation damage and activate the doping element. Flash-lamp annealing offers here an alternative route for the emitter formation at overall low thermal budget. During flash-lamp annealing, only the wafer surface is heated homogeneously to very high temperatures at ms time scales, resulting in annealing of the implantation damage and electrical activation of phosphorus. However, variation of the pulse time also allows to modify the degree of annealing of the bulk region to some extent as well, which can have an influence on the gettering behaviour of metallic bulk impurities. The μ-Raman spectroscopy showed that the silicon surface is amorphous after ion implantation. It could be demonstrated that flash-lamp annealing at 800°C for 20 ms even without preheating is sufficient to recrystallize implanted silicon. The highest carrier concentration and efficiency as well as the lowest resistivity were obtained after annealing at 1200°C for 20 ms both for mono- and multicrystalline silicon wafers. Photoluminescence results point towards P-cluster formation at high annealing temperatures which affects metal impurity gettering within the emitter.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 30-34
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers
Autorzy:
Kato, G.
Tajima, M.
Okayama, F.
Tokumaru, S.
Sato, R.
Toyota, H.
Ogura, A.
Powiązania:
https://bibliotekanauki.pl/articles/1382111.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Ap
61.72.Qq
82.80.Rt
88.40.jj
Opis:
We have investigated the correlation between deep-level photoluminescence and the density of small-angle grain boundaries in multicrystalline Si. A deep-level photoluminescence component around 0.87 eV, which we previously ascribed to oxygen precipitates, became lower and higher in the region with high and low density of small-angle grain boundaries, respectively. This can be explained by the differences in the availability of oxygen atoms around respective small-angle grain boundaries. We performed focused ion beam time-of-flight secondary ion mass spectroscopy on special points emitting extremely strong 0.87 eV emission, and detected a clustered area of $\text{}^16O¯$. This is strong evidence for the idea that the 0.87 eV band is due to oxygen precipitates.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1010-1012
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots
Autorzy:
Miyamura, Y.
Chen, J.
Prakash, R.
Jiptner, K.
Harada, H.
Sekiguchi, T.
Powiązania:
https://bibliotekanauki.pl/articles/1363535.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.jj
81.10.Fq
61.72.Ff
61.72.Hh
61.72.Lk
Opis:
We have studied the dislocation generation and propagation from the seed crystals during seed cast Si growth. The grown ingot was cut into a vertical wafer, followed by the dislocation imaging using X-ray topography and Secco etching. The dislocation behavior at the seed area was compared with the dislocation generation at the top surface due to the thermal stress during cooling. The dislocations at the seed/crystal interface have propagated on the {111} plane toward top. When the seed surface was not melted sufficiently, the interface defect density became high, but no clear dislocation propagation was recognized. This suggests that the thermal shock at the seed/melt interface was not high enough to propagate dislocations to the growth direction. A certain amount of dislocations has been introduced from the top into the ingot according to the thermal stress. These observations suggest that optimizing the initial growth condition is important to dislocation control.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1024-1026
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Vibro-Acoustic Signals Generated during Operation of Micro Wind Turbines
Autorzy:
Wotzka, D.
Boczar, T.
Malec, T.
Pierzga, R.
Powiązania:
https://bibliotekanauki.pl/articles/1399411.pdf
Data publikacji:
2013-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.50.jj
88.50.gp
43.40.At
Opis:
Results of a measurement and analysis of vibro-acoustic signals generated by two low power vertical-axis wind turbines that are installed on the roof of the Electric Power Institute at Opole University of Technology are presented in the paper. The study considers a Darrieus and a Savonius type wind turbines of rated power 1 kW each. For registration of the vibrations of the turbine mast three uniaxial accelerometers and a measurement equipment from Brüel & Kjær were applied. The measurement setup is presented in the paper. A comparative analysis of the registered data in the time and time-frequency domains was performed. Results depict changes in the recorded signals in time and frequency under different meteorological conditions, i.e. for different wind speed values. Based on the achieved results significant differences in the mast vibrations of the two kinds of wind turbines were stated.
Źródło:
Acta Physica Polonica A; 2013, 124, 3; 595-597
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-15 z 15

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