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    Wyświetlanie 1-5 z 5
    Tytuł:
    Experimental study of degradation modes and their effects on reliability of photovoltaic modules after 12 years of field operation in the steppe region
    Autorzy:
    Saadsaoud, M.
    Ahmed, A.
    Er, Z.
    Rouabah, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1054959.pdf
    Data publikacji:
    2017-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.-J
    88.40.H-
    88.40.FF
    Opis:
    This paper presents an evaluation of the performance degradation of photovoltaic modules after twelve operation years in a steppe region environment in Algeria. The objective is to understand the different degradation modes of the photovoltaic modules and associated factors and their impact on the electrical properties (V_{oc}, I_{sc}, V_{max}, I_{max}, P_{max} and FF) using the degradation tests of IEC 61215 qualification standard and the electroluminescence test. The experimental results show that yearly degradation rates of the maximum power output P_{max} present the highest possible loss, ranging from 2.08% to 5.2%. Additionally, the results show that the short-circuit current I_{sc} comes second with yearly degradation rates spanning from 2.75% to 2.84%. Finally the open-circuit voltage V_{oc} is the least affected, with yearly degradation occurring from 0.01% to 4.25%.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 3; 930-935
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Spectral Irradiance Distribution on the Performance of Solar Cells
    Autorzy:
    Guechi, A.
    Chegaar, M.
    Merabet, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492610.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Pz
    84.60.Jt
    88.40.hj
    88.40.ff
    96.60.Ub
    Opis:
    In this paper, the global and diffuse solar radiation incident on solar cells is simulated using a spectral model SMARTS2, for varying atmospheric conditions on the site of Setif. The effect of changes in total intensity and spectral distribution on the short circuit current and efficiency of different kinds of thin film solar cells (CdTe, nc-Si:H and copper indium gallium selenide, CIGS) is examined. The results show a reduction in the short circuit current due to increasing turbidity. It is 18.82%, 27.06% and 26.80% under global radiation and for CdTe, nanocrystalline silicon (nc-Si:H), and CIGS solar cells, respectively. However it increases under diffuse radiation. Increasing water vapor in the atmosphere leads to a reduction in the short circuit current of 3.15%, 2.38%, and 2.45%, respectively, for CdTe, nc-Si:H, and CIGS cells under global radiation and it is not influenced under diffuse radiation. The performance of the solar cells is notably reduced, both in terms of efficiency and open circuit voltage, with increasing air mass.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-043-A-046
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process
    Autorzy:
    Tejero, A.
    Tupin, E.
    González, M.
    Martínez, O.
    Jiménez, J.
    Belouet, C.
    Baillis, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198416.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Am
    61.72.Ff
    88.40.jj
    Opis:
    In the silicon ribbon on a sacrificial template process silicon is deposited on both sides of a carbon ribbon, thus forming a Si/carbon/Si trilayer. The fast cooling of the ribbon in large temperature gradients generates stresses that are detrimental to both the electrical performance and the mechanical behaviour of the wafers. The assessment of the stresses is crucial for the setting-up of thermal treatments allowing for the stress relaxation of the wafers, prior to the cell fabrication. We present an analysis of the stress in the as-grown trilayer by a simulation of the thermomechanical behaviour of the cooling ribbon. Experimental measurements of the stress in as-grown and annealed trilayers are also presented. The results permit to establish the conditions for optimized growth and annealing.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1006-1009
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Residual Strain and Electrical Activity of Defects in Multicrystalline Silicon Solar Cells
    Autorzy:
    Martínez, O.
    Mass, J.
    Tejero, A.
    Moralejo, B.
    Hortelano, V.
    González, M.
    Jiménez, J.
    Parra, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198419.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Am
    61.72.Ff
    88.40.jj
    Opis:
    The growth process by casting methods of multi-crystalline Si results in a crystalline material with, among other defects, a high density of dislocations and grain boundaries. Impurity incorporation and their gathering around grain boundaries and dislocations seem to be the main factor determining the electrical activity of those defects, which limit the minority carrier lifetime. In this work, we analyze multi-crystalline Si samples by combining etching processes to reveal the defects, Raman spectroscopy for strain measurements, and light beam induced current measurements for the localization of electrically active defects. In particular, we have explored the etching routes capable to reveal the main defects (grain boundaries and dislocation lines), while their electrical activity is studied by the light beam induced current technique. We further analyze the strain levels around these defects by Raman micro-spectroscopy, aiming to obtain a more general picture of the correlation between residual stress and electrical activity of the extended defects. The higher stress levels are observed around intra-grain defects associated with dislocation lines, rather than around the grain boundaries. On the other hand, the intra-grain defects are also observed to give dark light beam induced current contrast associated with a higher electrical activity of these defects as compared to the grain boundaries.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1013-1016
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots
    Autorzy:
    Miyamura, Y.
    Chen, J.
    Prakash, R.
    Jiptner, K.
    Harada, H.
    Sekiguchi, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1363535.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jj
    81.10.Fq
    61.72.Ff
    61.72.Hh
    61.72.Lk
    Opis:
    We have studied the dislocation generation and propagation from the seed crystals during seed cast Si growth. The grown ingot was cut into a vertical wafer, followed by the dislocation imaging using X-ray topography and Secco etching. The dislocation behavior at the seed area was compared with the dislocation generation at the top surface due to the thermal stress during cooling. The dislocations at the seed/crystal interface have propagated on the {111} plane toward top. When the seed surface was not melted sufficiently, the interface defect density became high, but no clear dislocation propagation was recognized. This suggests that the thermal shock at the seed/melt interface was not high enough to propagate dislocations to the growth direction. A certain amount of dislocations has been introduced from the top into the ingot according to the thermal stress. These observations suggest that optimizing the initial growth condition is important to dislocation control.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1024-1026
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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