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    Wyświetlanie 1-7 z 7
    Tytuł:
    Simulation of Carbon Ions Interactions with Monocrystalline Silicon Targets
    Autorzy:
    Bouguerra, A.
    Labbani, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402536.pdf
    Data publikacji:
    2015-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Bh
    85.40.Ry
    Opis:
    In this work, several phenomena related to carbon ion implantation into Si(100) targets were simulated. The investigation was performed using Crystal-TRIM code (crystal-transport and range of ions in matter) under different conditions. In particular, we simulated the carbon profiles with respect to: (i) ions beam (energy, dose, orientation); (ii) substrate (temperature, crystallographic orientation). Two particular cases were taken into account: (i) implantation of 80 keV C⁺ to a fluence of 2.7× 10¹⁷ ion/cm² at room temperature; (ii) implantation of 40 keV C⁺ to a fluence of 6.5× 10¹⁷ ion/cm² at substrate temperature of 400°C. For both cases, we used a tilt angle of 7°. Several results were obtained and compared with the Rutherford backscattering spectroscopy and elastic recoil detection analysis results provided by literature.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 2B; B-67-B-70
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Design of Solar Cells p⁺/n Emitter by Spin-On Technique
    Autorzy:
    El Amrani, A.
    Boucheham, A.
    Belkacem, Y.
    Boufenik, R.
    Boudaa, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1031365.pdf
    Data publikacji:
    2017-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.KK
    88.40.JJ
    85.40.Ry
    Opis:
    In this paper spin-on dopant diffusion has been investigated as a technique for fabrication of p⁺/n monocrystalline silicon solar cell emitters. A homogeneous spreading onto the front wafer surface has been achieved by using 2 ml of boron-dopant solution and three-step spin-profile. Study of the wafers stacking arrangement has revealed that the highest doping level and the best emitter sheet resistance uniformity were obtained using the back-to-back wafers arrangement. The N₂/O₂ gas ratio variation during the diffusion process has shown that a higher percentage of nitrogen yields a slightly lower emitter sheet resistance. Study on temperature dependence of as-processed emitter resistivity revealed that 910°C results in targeted sheet resistance of around 48 Ω/sq. Using these preliminary experimental results, a batch of 6 silicon wafers was processed. After BSG and BRL chemical removal, the batch average sheet resistance of the emitter was 49.50 Ω/sq. The uniformity of a wafer and of the batch was below 7% and 13%, respectively. The ECV and SIMS depth profiling have shown the electrically active and the total boron surface concentration of 1.5× 10²⁰ atoms/cm³ and 2.5× 10²⁰ atoms/cm³, respectively. The junction depth was around 0.3 μm. Finally, by increasing the oxygen flow rate we reached an average sheet resistance of 51 Ω/sq. and a junction depth of 0.35 μm.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 3; 717-719
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Experimental characterization of antimony dopant in silicon substrate
    Autorzy:
    Serrar, H.
    Labbani, R.
    Benazzouz, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1065353.pdf
    Data publikacji:
    2016-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.U-
    68.55.Ln
    85.40.Ry
    Opis:
    Ion implantation is a method largely used to fabricate shallow junctions in the surface target. However, the ions are randomly redistributed and a huge damage is generated in the sample. Annealing treatments are thus necessary to restore defects and to activate the dopant. Among several elements, antimony is particularly attractive since it has low diffusivity in silicon which means that is suitable to obtain ultra shallow junctions. Moreover, antimony is attractive in many applications such as the fabrication of transistors and infrared detectors. In this work, the electrical activation of antimony is studied in case of silicon target.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 1; 51-54
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cobalt Additives Influence on Phase Composition and Defect Structure of Manganese Dioxide Prepared from Fluorine Containing Electrolytes
    Autorzy:
    Sokolsky, G.
    Ivanov, S.
    Ivanova, N.
    Boldurev, Ye.
    Kobulinskaya, O.
    Demchenko, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1550089.pdf
    Data publikacji:
    2010-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.66.Fn
    61.72.-y
    85.40.Ry
    Opis:
    Manganese dioxide samples were prepared from fluorine containing electrolytes with additives of $Co^{2+}$ ions. Atomic absorption spectroscopy, thermogravimetric analysis, X-ray diffraction, scanning electron microscopy with energy dispersive X-ray analysis were the methods of the samples characterisation. Manganese dioxide at the presence of cobalt forms nanosized ramsdellite structure crystallites of mostly needle-like morphology with significant content of hydroxide groups. The main phase state in manganese dioxide samples obtained at the presence of cobalt is $γ-MnO_{2}$ with ramsdellite structure and low content of intergrowth defects. The sample doped both with lithium and cobalt can be indexed to a hollandite-type structure (tetragonal; space group I4/m) of $α-MnO_{2}$.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 1; 86-90
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ORR Electrocatalysis on Cr³⁺, Fe²⁺, Co²⁺-Doped Manganese(IV) Oxides
    Autorzy:
    Sokolsky, G.
    Zudina, L.
    Boldyrev, E.
    Miroshnikov, O.
    Gauk, N.
    Kiporenko, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030872.pdf
    Data publikacji:
    2018-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.66.Fn
    61.72.-y
    85.40.Ry
    Opis:
    The ionic dopant additives have different mechanisms of their influence upon MnO₂ electrocrystallisation process and depending on dopants added the following polymorphs are stabilised: α -MnO₂ (hollandite, I4/m) - NH₄⁺; γ -MnO₂ (ramsdellite, Pbnm) - Co²⁺, Fe²⁺; layered polymorph δ -MnO₂ (birnessite, C2/m) - Cr³⁺. The defect states of intergrowth method in ramsdellite matrix and twinning, OH groups studied by X-ray diffraction and the Fourier transform infrared mtehod, respectively, indicate their high content in case of Fe²⁺ and Co²⁺-doped manganese dioxide. CVA oxygen reduction reaction peaks were established after experiments in alkaline electrolytes and dioxygen (argon, air) atmosphere. Activity of doped samples studied is comparable with other published data. Both doped with Co²⁺ and Fe²⁺ samples display maximal currents and some distinctive features in oxygen reduction reaction.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 4; 1097-1102
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Depth Profile Analysis of Phosphorus Implanted SiC Structures
    Autorzy:
    Konarski, P.
    Król, K.
    Miśnik, M.
    Sochacki, M.
    Szmidt, J.
    Turek, M.
    Żuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402214.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    68.55.Ln
    82.80.Ms
    85.40.Ry
    Opis:
    Secondary ion mass spectrometry depth profile analyses were performed on two sets of 4H-SiC(0001) substrate samples implanted with phosphorus. Both sets were processed under the same conditions. We implanted the samples with 100 keV (10¹¹-10¹⁴ cm¯²) phosphorus ions through the thin chemical vapor deposition deposited silicon dioxide stopping mask in order to obtain an ultra-shallow implantation profile. After phosphorus implantation, secondary ion mass spectrometry depth profile analysis was performed on the first set of samples and the second set was subjected to thermal oxidation procedure at 1200°C in order to create a dielectric layer. The aim of the oxidation process was formation of the silicon dioxide layer enriched with phosphorus: the element, which is considered to be suitable for trap density reduction. Ion implantation parameters as well as oxidation and chemical etching procedures were examined for the proper incorporation of phosphorus into the subsurface structure of the silicon oxide. Secondary ion mass spectrometry depth profile analysis was performed with Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The analytical parameters such as: 1.7 keV Ar⁺ ion beam digitally scanned over 3×3 mm² area and ion erosion rate of 1.4 nm/min and sampling rate of 0.3 nm, were suitable for samples oxidized after ion implantation.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 864-866
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed
    Autorzy:
    Żymierska, D.
    Godwod, K.
    Adamczewska, J.
    Auleytner, J.
    Choiński, J.
    Regiński, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030690.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.80.-x
    61.10.-i
    85.40.Ry
    Opis:
    The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10$\text{}^{14}$ ions· cm$\text{}^{-2}$ dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 743-750
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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