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Tytuł:
Effect of Particle Impact Angle, Erodent Particle Size and Acceleration Pressure on the Solid Particle Erosion Behavior of 3003 Aluminum Alloy
Autorzy:
Yıldıran, Y.
Avcu, E.
Şahin, A.
Fidan, S.
Yetiştiren, H.
Sınmazçelik, T.
Powiązania:
https://bibliotekanauki.pl/articles/1195082.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Bx
81.70.-q
68.35.B-
68.35.-p
42.79.Ls
68.37.Hk
07.85.Nc
Opis:
This study aims to examine solid particle erosion behavior of 3003 aluminum alloy. 3003 aluminum alloy samples were eroded in erosion test rig under various particle impingement angles (15°, 30°, 45° and 60°) and acceleration pressures (1.5, 3 and 4 bar) by using 80 mesh and 180 mesh sized erodent particles (garnet). The erosion rates of aluminum alloy samples were calculated depending on the erosion parameters. The erosion rates of the samples have varied dramatically depending on particle impingement angle, acceleration pressure and erodent particle size. The maximum erosion rates were observed at 15° impingement angles at all acceleration pressures and particle sizes. Moreover, erosion rates of the samples were increased with increases in acceleration pressure at all particle impingement angles and particle sizes. On the other hand, erosion rates of the samples decrease with increase in erodent particle sizes. Hence, maximum erosion was observed when the aluminum alloy eroded at 15° impingement angle and 4 bar pressure by using 180 mesh erodent particles. Finally, the eroded surfaces of the samples were analyzed by using scanning electron microscope. The surfaces of the samples were also investigated by using energy dispersive X-ray analysis in scanning electron microscopy studies. Microcutting and microploughing erosion mechanisms were observed at 15° and 30° impingement angles, while deep cavities and valleys formed due to plastic deformation were observed at 45° and 60° impingement angles. Moreover, embedded erodent particles were clearly detected on the surfaces of the samples by energy dispersive X-ray analysis.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 523-525
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stopping Power and Energy Straggling of Channeled He-Ions in GaN
Autorzy:
Turos, A.
Ratajczak, R.
Pągowska, K.
Nowicki, L.
Stonert, A.
Caban, P.
Powiązania:
https://bibliotekanauki.pl/articles/1504098.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Fk
61.85.+p
68.55.Ln
68.35.Dv
Opis:
GaN epitaxial layers are usually grown on sapphire substrates. To avoid disastrous effect of the large lattice mismatch a thin polycrystalline nucleation layer is grown at 500°C followed by the deposition of thick GaN template at much higher temperature. Remnants of the nucleation layer were visualized by transmission electron microscopy as defect agglomeration at the GaN/sapphire interface and provide a very useful depth marker for the measurement of channeled ions stopping power. Random and aligned spectra of He ions incident at energies ranging from 1.7 to 3.7 MeV have been measured and evaluated using the Monte Carlo simulation code McChasy. Impact parameter dependent stopping power has been calculated for channeling direction and its parameters have been adjusted according to experimental data. For virgin, i.e. as grown, samples, the ratio of channeled to random stopping power is constant and amounts to 0.7 in the energy range studied. Defects produced by ion implantation largely influence the stopping power. For channeled ions the variety of possible trajectories leads to different energy loss at a given depth, thus resulting in much larger energy straggling than that for the random path. Beam energy distributions at different depths have been calculated using the McChasy code. They are significantly broader than those predicted by the Bohr formula for random direction.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 163-166
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Magnetostriction Model for MagNEMS
Autorzy:
Szumiata, T.
Gzik-Szumiata, M.
Powiązania:
https://bibliotekanauki.pl/articles/1201850.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.25.-g
85.85.+j
75.80.+q
85.70.Ec
68.35.-p
Opis:
In this work the influence of surface roughness on magnetostrictive nano-actuator parameters has been analyzed theoretically. A mechanical and magnetoelastic behavior of investigated cantilever bimorphic system has been described in the frame of the simple analytical model. Realistic material parameters have been incorporated into the model for high-magnetostrictive galfenol (Fe-Ga) thin films on silicon substrate. It has been shown that for 5 nm thick galfenol film a flat surface magnetostrictive effects modify the cantilever deflection and force only by 3%, whereas in the case of rough surface this influence increases to about 15%, when dimensions of roughness steps are comparable to the distances between them.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 200-201
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Field Sensor Based on Magnetic Tunnel Junction with Voltage-Tunable Magnetic Anisotropy
Autorzy:
Skowroński, W.
Wiśniowski, P.
Wrona, J.
Żywczak, A.
Stobiecki, T.
Powiązania:
https://bibliotekanauki.pl/articles/1386807.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.75.-d
85.75.Ss
85.35.-p
Opis:
We present a submicron magnetic field sensor with voltage-tunable magnetic field sensitivity. The device, based on magnetic tunnel junction, exhibits high tunnelling magnetoresistance ratio of up to 90%. Perpendicular magnetic anisotropy of thin ferromagnetic sensing layer in combination with an in-plane magnetized reference layer is used to obtain linear change in the sensor resistance in response to the in-plane magnetic field. The perpendicular anisotropy is further controlled by the bias voltage and, thus, the sensitivity of the sensor is changed. In addition, we evaluate the sensor selectivity for the magnetic field direction and present an influence of the temperature on the anisotropy.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 496-498
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Controlled Manipulation of Parameters of the Quantum Antidot
Autorzy:
Pyragienė, T.
Powiązania:
https://bibliotekanauki.pl/articles/1178763.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Mf
85.35.-p
03.65.-w
Opis:
The electron motion in a strong perpendicular magnetic field close to the impenetrable obstacle is considered by the semi-classical and quantum points of view. We investigated an influence of a shape of the forbidden region to the formation of the plateaux in the one electron energy spectrum and transmissions between dot and antidot states. In the semi-classical regime electrons can be treated as charged particles with well-defined trajectories pinned to the potential wall. This approach, combined with singular equation technique in quantum calculations, has given us a possibility to investigate stripe-shaped and bow-shaped antidots with sharp edges and to find a way for controlled manipulation of the parameters of systems with an effort to get desired physical properties.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 392-395
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Josephson-Like Effect in Mesoscopic Loop Structures
Autorzy:
Paśko, W.
Powiązania:
https://bibliotekanauki.pl/articles/2044516.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
03.67.-a
73.23.Ad
75.47.Jn
85.35.Ds
Opis:
The quantum interference is considered in time-dependent magnetic field that is quantum beats in mesoscopic loop structure. The similarities between this effect and Josephson, scalar Aharonov-Bohm and Aharonov-Casher effects, as well as their differences are treated and a possible application of the effect to the construction of the device, complementary to SQUIDs, is analysed.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 817-824
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Geometrical Parameters on the Transport Characteristics of Gated Core-Multishell Nanowires
Autorzy:
Palutkiewicz, T.
Wołoszyn, M.
Wójcik, P.
Adamowski, J.
Spisak, B.
Powiązania:
https://bibliotekanauki.pl/articles/1185174.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.63.Nm
85.35.-p
Opis:
Calculations of the current-voltage characteristics of the core-multishell nanowires for different radii of the core and various thicknesses of the shells are presented. A role of the conducting core and shells in the coherent transport under the influence of the gate voltage is discussed.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-111-A-113
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport characteristics of gated core-multishell nanowires: Self-consistent approach
Autorzy:
Palutkiewicz, T.
Wołoszyn, M.
Wójcik, P.
Spisak, B.
Powiązania:
https://bibliotekanauki.pl/articles/1058786.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.63.Nm
85.35.-p
Opis:
The influence of the applied gate voltage on the coherent propagation of the conduction electrons through the InGaAs/InP core-multishell nanowires with the surrounding gate is considered. The solution of the three-dimensional Schrödinger equation within the effective mass approximation is found using the adiabatic method. The electrostatic potential distribution generated by the all-around gate is determined from the self-consistent procedure applied to the Schrödinger-Poisson problem. The Landauer-Büttiker formalism and quantum transmission boundary method are applied to calculate the transport properties of the considered nanosystem.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1190-1192
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN
Autorzy:
Pągowska, K.
Ratajczak, R.
Stonert, A.
Turos, A.
Nowicki, L.
Sathish, N.
Jóźwik, P.
Muecklich, A.
Powiązania:
https://bibliotekanauki.pl/articles/1504096.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Fk
61.85.+p
68.55.Ln
68.35.Dv
Opis:
A systematic study on structural defect buildup in 320 keV Ar-ion bombarded GaN epitaxial layers has been reported, by varying ion fluences ranged from 5 × $10^{12}$ to 1 × $10^{17}$ at./$cm^2$. 1 μm thick GaN epitaxial layers were grown on sapphire substrates using the metal-organic vapor phase epitaxy technique. Rutherford backscattering/channeling with 1.7 $MeV^4He$ beam was applied for analysis. As a complementary method high resolution transmission electron microscopy has been used. The later has revealed the presence of extended defects like dislocations, faulted loops and stacking faults. New version of the Monte Carlo simulation code McChasy has been developed that makes it possible to analyze such defects on the basis of the bent channel model. Damage accumulation curves for two distinct types of defects, i.e. randomly displaced atoms and extended defects (i.e. bent channel) have been determined. They were evaluated in the frame of the multistep damage accumulation model, allowing numerical parameterization of defect transformations occurring upon ion bombardment. Displaced atoms buildup is a three-step process for GaN, whereas extended defect buildup is always a two-step process.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 153-155
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
From Acoustic Waves to Microwaves
Autorzy:
Mendes Pacheco, G.
Salvi Sakamoto, J.
Kitano, C.
Powiązania:
https://bibliotekanauki.pl/articles/1377945.pdf
Data publikacji:
2015-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
43.35.Sx
42.79.Jq
51.40.+p
42.79.-e
43.35.Zc
84.40.-x
85.60.-q
Opis:
We present here some results of our research related to the optoelectronics and photonics and show all the experimental setups used. Starting with a discussion on the importance of the waves, we demonstrate our achievements based on employment of acoustic, optical, and microwaves and their technological use. The results concern the acousto-optic and electro-optic effects. The generalized analysis of the electro-optic effect reveals a new high induced birefringence in lithium niobate. A patented optical fiber microphone is presented, and its applications to the measurements of acoustic wave velocity in gases and in the laser ultrasound non-destructive evaluation system are discussed. Finally, the generation of microwaves by an optical method with substantial cost reduction is presented.
Źródło:
Acta Physica Polonica A; 2015, 127, 1; 25-28
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Standing Waves: a Powerful Tool for Interface Studies
Autorzy:
Lagomarsino, S.
Scarinci, F.
Castrucci, P.
Giannini, C.
Powiązania:
https://bibliotekanauki.pl/articles/1931655.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.85.+n
61.10.Lx
68.35.-p
Opis:
The X-ray standing wave technique has demonstrated in these last years to be a powerful method in the study of interfaces. In this paper the fundamentals of the technique will be given, together with examples of applications in the field of metal-semiconductor, of buried semiconductor-semiconductor interfaces and in structural studies of Langmuir-Blodgett films.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 553-566
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Inverse Problems for Quantum Graphs: Recent Developments and Perspectives
Autorzy:
Kurasov, P.
Powiązania:
https://bibliotekanauki.pl/articles/1492443.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.65.Nk
73.63.-b
85.35.-p
Opis:
An introduction into the area of inverse problems for the Schrödinger operators on metric graphs is given. The case of metric finite trees is treated in detail with the focus on matching conditions. For graphs with loops we show that for almost all matching conditions the potential on the loop is not determined uniquely by the Titchmarsh-Weyl function. The class of all admissible potentials is characterized.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-132-A-141
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Inverse Problem for Quantum Graphs with One Cycle
Autorzy:
Kurasov, P.
Powiązania:
https://bibliotekanauki.pl/articles/1585121.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.65.Nk
73.63.-b
85.35.-p
Opis:
Quantum graphs having one cycle are considered. It is shown that if the cycle contains at least three vertices, then the potential on the graph can be uniquely reconstructed from the corresponding Titchmarsh-Weyl function (Dirichlet-to-Neumann map) associated with graph's boundary, provided certain non-resonant conditions are satisfied.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 765-771
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Spectral Gap for Laplacians on Metric Graphs
Autorzy:
Kurasov, P.
Powiązania:
https://bibliotekanauki.pl/articles/1399045.pdf
Data publikacji:
2013-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.65.Nk
73.63.-b
85.35.-p
Opis:
We discuss lower and upper estimates for the spectral gap of the Laplace operator on a finite compact connected metric graph. It is shown that the best lower estimate is given by the spectral gap for the interval with the same total length as the original graph. An explicit upper estimate is given by generalizing Cheeger's approach developed originally for Riemannian manifolds.
Źródło:
Acta Physica Polonica A; 2013, 124, 6; 1060-1062
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barriers in Miniaturization of Electronic Devices and the Ways to Overcome Them - from a Planar to 3D Device Architecture
Autorzy:
Godlewski, M.
Guziewicz, E.
Gierałtowska, S.
Łuka, G.
Krajewski, T.
Wachnicki, Ł.
Kopalko, K.
Powiązania:
https://bibliotekanauki.pl/articles/1807598.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.35.-p
73.40.Lq
73.40.Qv
81.05.Dz
81.15.-z
Opis:
We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator $HfO_{2}$. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-19-S-21
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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