Temat: 82.45.Vp - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Supercapacity of Soft-Expanded Graphite in Li-Intercalational Electric Current Generation
Autorzy:: Shvets, R.
Grygorchak, I.
Kurepa, A.
Pokladok, N.
Sementsov, Yu.
Dovbeshko, G.
Sheregii, Ye.
Seredyuk, B.
Powiązania:: https://bibliotekanauki.pl/articles/1402576.pdf
Data publikacji:: 2015-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.16.Fg
82.45.Vp
Opis:: A microwave-intercalation modification of natural graphite which ensures its effective use as a cathode material of Li-based sources of electric current is developed. Interconnection between the parameters of modification and thermodynamic and kinetic behavior of Li-intercalation electric current generation is established. On the basis of the obtained data from impedance spectroscopy, X-ray diffractometry analysis, and spectroscopy of the Raman scattering of light, the mechanism of the observed phenomena is suggested.
Źródło:: Acta Physica Polonica A; 2015, 128, 2; 208-209
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Electrochemically-Gated Field-Effect Transistor with Indium Tin Oxide Nanoparticles as Active Layer
Autorzy:: Dasgupta, S.
Dehm, S.
Kruk, R.
Hahn, H.
Powiązania:: https://bibliotekanauki.pl/articles/1808330.pdf
Data publikacji:: 2009-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.15.Eb
73.63.Bd
81.07.Bc
82.45.Vp
85.30.Tv
Opis:: An electrochemically-gated junction field-effect transistor with metallic conducting indium tin oxide nanoparticle array as active layer is reported. Fabrication of a field-effect device with a degenerative semiconductor like indium tin oxide (carrier concentration $10^{20}-10^{21} cm^{-3}$) is possible by exploiting the high surface-to-volume ratio of nanoparticles and high surface charge density achievable by electrochemical gating. The on/off ratio obtained is 325 although the applied potential was restricted to the capacitive double layer region (to ensure high repeatability) without allowing redox reactions to take place at the interface.
Źródło:: Acta Physica Polonica A; 2009, 115, 2; 473-476
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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