- Tytuł:
- Desorption Activation Energy of $SiBr_2$ Molecules according to Steady-State Approximation
- Autorzy:
- Knizikevičius, R.
- Powiązania:
- https://bibliotekanauki.pl/articles/1365355.pdf
- Data publikacji:
- 2014-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.65.Cf
82.20.Db
82.20.Pm - Opis:
- The chemical etching of intrinsic and n-type polycrystalline silicon in $Br_2$ ambient is considered. The theoretically calculated dependences of silicon etching rates on pressure of $Br_2$ molecules at different temperatures are compared with experimentally measured ones. The reaction and desorption activation energies are evaluated. It is found that activation energy of Si + $Br_2$ → $SiBr_2$ reaction for intrinsic silicon is equal to (1.82 ± 0.24) eV, and decreases to (1.45 ± 0.24) eV when n-type silicon films are used. Desorption activation energy of $SiBr_2$ molecules for intrinsic silicon is equal to (1.94 ± 0.17) eV, and decreases to (1.51 ± 0.17) eV when n-type silicon films are used. Desorption of $SiBr_2$ molecules is an etching-rate limiting process at high pressure of $Br_2$ molecules.
- Źródło:
-
Acta Physica Polonica A; 2014, 125, 5; 1240-1243
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł