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Wyszukujesz frazę "81.60.Cp" wg kryterium: Temat

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    Wyświetlanie 1-6 z 6
    Tytuł:
    Passivation of a Bulk Defect E$\text{}_{c}$-0.22 eV in GaAs by Contact with Phosphoric Acid
    Autorzy:
    Babiński, A.
    Gołdys, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1886500.pdf
    Data publikacji:
    1991-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.70.At
    81.60.Cp
    71.55.Eq
    Opis:
    The E$\text{}_{c}$-0.22 eV trap in Horizontal Bridgman undoped n-type GaAs may be passivated by contact with phosphoric acid for 8 hours at room temperature. Isochronal annealing, at around 250°C for 1 hour resulted in the partial recovery of this defect. The possible mechanisms of E$\text{}_{c}$-0.22 eV trap passivation are proposed.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 2-3; 277-280
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    DSL Photoetching: Principles and Application to Study Nature of Defects in III-V Materials
    Autorzy:
    Weyher, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1888018.pdf
    Data publikacji:
    1991-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.60.Cp
    61.70.Jc
    61.70.At
    Opis:
    After a short general description of the chemical etching of semiconductors the mechanisms of defect-selective etching are described in detail. Two distinct mechanisms that lead to the formation of etch pits and etch hillocks on dislocations emerging at a semiconductor surface are discussed. The principles of the formation of defect-related etch features are described for the HF-CrO$\text{}_{3}$-H$\text{}_{2}$O etching system used for etching of GaAs. A model of surface reactions is presented and the influence of illumination during etching on the defect-selectivity is emphasized. The use of ultra sensitive photoetching to study the nature and origin of complex defects in SI and n-like GaAs is documented. In particular, the concept for the formation of dislocation cell structure in undoped GaAs is presented and the ability of photoetching to reveal the structural changes during annealing is visualized.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 2; 149-160
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Semi-Insulating Transition Metal-Doped III-V Materials
    Autorzy:
    Hennel, Andrzej M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1877336.pdf
    Data publikacji:
    1991-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.80.Ey
    81.60.Cp
    Opis:
    This review surveys the properties of transition metal (TM) doped semi-insulating (SI) III-V semiconductors. After a general definition of a SI material, a simple model of a SI crystal with a midgap donor and shallow impurities is discussed. A short history, main properties, and thermal stability problems of SI Cr-doped GaAs are presented. The puzzling problem of SI V-doped GaAs is explained. Several dopants (Cr, Fe, Co, and Ti) in SI InP are discussed in terms of the resistivities obtained, as well as thermal stability. Finally, GaP and GaInAs high resistivity systems are considered.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 1; 15-29
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The microstructure and thermal stability of the two-component melt-spun Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ TCMS amorphous/amorphous composite
    Autorzy:
    Ziewiec, K.
    Wojciechowska, M.
    Prusik, K.
    Mucha, D.
    Jankowska-Sumara, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1075849.pdf
    Data publikacji:
    2016-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.05.J-
    81.05.Kf
    81.05.Pj
    72.15.Cz
    68.60.Dv
    Opis:
    The aim of this study is to present the special features and properties of the two alloys of similar average chemical composition Ni₅₅Fe₂₀Cu₅P₁₀B₁₀, processed through two different routes. The first alloy was melt-spun after the ejection of homogeneous liquid using a traditional single chamber crucible, and the second alloy was ejected from a double chamber crucible as two separate liquids: i.e., Ni₄₀Fe₄₀B₂₀ and Ni₇₀Cu₁₀P₂₀, mixing only at the orifice area. The studies of the microstructure of the composite alloy were performed through the use of transmission electron microscopy and scanning electron microscopy. The Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ two-chamber melt-spun (TCMS) alloy, as well as the homogeneous Ni₅₅Fe₂₀Cu₅P₁₀B₁₀, Ni₄₀Fe₄₀B₂₀, and Ni₇₀Cu₁₀P₂₀ alloys, were heated to elevated temperatures and their characteristics studied by means of differential scanning calorimetry. The temperature resistivity change method was applied to the examination of the Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ TCMS alloy. The phase composition after heat treatment was investigated using X-ray diffraction. The results of the microstructure examination show that the TCMS alloy is an amorphous/amorphous composite, and is notable for its Ni-Fe-B and Ni-Cu-P stripes resulting from its differentiated chemical composition. Another unique feature of the TCMS alloy is that it retains its wood-like morphology even after high-temperature heat treatment. The crystallisation of the TCMS alloy starts from the Ni-Cu-P constituent and ends with the Ni-Fe-B areas of the sample. The results are discussed on the basis of previous work completed on amorphous matrix composites.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 4; 927-930
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Properties of Mechanochemically Synthesized Mixed Oxides
    Autorzy:
    Kostova, N.
    Zorkovská, A.
    Kováč, J.
    Velinov, N.
    Baláž, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1372521.pdf
    Data publikacji:
    2014-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.84.Bw
    75.60.-d
    76.80.+y
    61.05.cp
    81.07.Wx
    Opis:
    The mixed oxides $Fe_{2}O_{3}-ZnO$ have been obtained in nanocrystalline state by reactive milling in a high-energy planetary mill, from a stoichiometric mixture of hematite and ZnO. The magnetic properties of samples were evaluated by magnetization measurements and Mössbauer spectrometry. A post milling annealing promotes the solid state reaction and improves the zinc ferrite formation, paramagnetic $ZnFe_{2}O_{4}$ phase is formed. Further mechanical activation leads to structural transformation into Wüstite-type (FeZn)O mixed oxide, with ferromagnetic hysteresis and increased magnetization.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 1; 411-412
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural investigation of K-feldspar KAlSi₃O₈ crystals by XRD and Raman spectroscopy: An application to petrological study of Luc Yen pegmatites, Yen Bai province, Vietnam
    Autorzy:
    Huong, L.
    Nhung, N.
    Kien, N.
    Zubko, M.
    Häger, T.
    Hofmeister, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1075745.pdf
    Data publikacji:
    2016-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    78.30.-j
    81.70.Jb
    82.80.-d
    91.65.-n
    91.60.-x
    Opis:
    K-feldspars in pegmatites from Luc Yen gem mining area, Yen Bai province, Vietnam were studied by X-ray fluorescence, X-ray powder diffraction and the Raman spectroscopy. Chemical analysis determined the K-feldspars in the form: of (K_{0.8909}Na_{0.0388}Ca_{0.002}Pb_{0.0042}Cs_{0.0024}Rb_{0.0338})(Al_{0.9975}Fe_{0.0053}Ti_{0.0004})Si_{2.988}O₈. Both X-ray powder diffraction and Raman spectroscopy indicated Luc Yen K-feldspars as orthoclase phase. Together with the values of Al content of the T1 tetrahedral sites in orthoclase, it is understood that Luc Yen pegmatites are of young ages (Cenozoic) and shallow intrusive types.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 4; 892-893
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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