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    Wyświetlanie 1-5 z 5
    Tytuł:
    The NO₂ Sensing Properties of the Sensors Done with Nano-Tetrapods
    Autorzy:
    Tulun, F.
    Öztürk, S.
    Öztürk, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398786.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.-b
    81.16.-c
    81.10.Fq
    07.07.Df
    81.10.St
    Opis:
    In this work we have studied the NO2 sensing properties of the sensors with tetrapods. The tetrapods that were used in the production were obtained by CVD route, and their structural analysis was carried out using SEM, XRD and EDX methods. The sensors were produced by a different method that the one mentioned in our another work, and additional electrical I-V characterization was carried out. As well as in the previous work the sensors were tested for 50 ppm sensitivity, by using computer controlled gas flux system, in NO₂ at 200°C, and in ambient air to model the normal working conditions more closely. It was found that the sensors have a good sensitivity to the NO₂ gas. All of the sensors showed a great reversibility and it was found that the recovery time was perfectly low. After this experiment the same sensors were tested with other different gases for several times. And no other problems in sensing ability were seen.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 797-799
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Czochralski-Based Growth and Characteristics of Selected Novel Single Crystals for Optical Applications
    Autorzy:
    Shimamura, K.
    Víllora, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399453.pdf
    Data publikacji:
    2013-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.St
    77.84.-s
    85.60.Jb
    42.79.Bh
    78.20.Ls
    85.70.Sq
    Opis:
    In the Year of Professor Jan Czochralski, we with pleasure review the representative recent works of our group, Optical Single Crystals Group, NIMS, Japan. Our group has been working on the development of novel single crystals for optical applications based on the Czochralski technique. Here, 4 kinds of topics are reviewed. 1st one is ferroelectric fluoride $BaMgF_{4}$ single crystals for UV nonlinear optical applications including quasi-phase matching device fabrications. 2nd one is transparent conductive $\beta-Ga_{2}O_{3}$ single crystals as semiconductor, which has large band-gap, 4.8 eV, for LED applications. 3rd one is F-doped core-free $Y_{3}Al_{5}O_{12}$ single crystals as a potential new lens material for UV/VUV wavelength region. Last one is superior magneto-optical ${Tb_3}[Sc_{2-x}Lu_{x}](Al_{3})O_{12}$ single crystals for near infrared to visible region, and $CeF_3//PrF_3$ single crystals for UV region.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 2; 265-273
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Growth Conditions and Doping on Physical Properties of Gallium Antimonide Single Crystals
    Autorzy:
    Mirowska, A.
    Orłowski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1409657.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Ea
    81.10.Fq
    81.10.-h
    81.10.St
    72.80.Ey
    71.55.Eq
    61.72.uj
    Opis:
    Gallium antimonide (GaSb) single crystals were grown by modified Czochralski method integrated with in situ synthesis in a flowing atmosphere of pure hydrogen. The influence of charge material purity as well as other technological parameters on GaSb crystals quality was investigated. High purity undoped GaSb single crystals were grown with residual acceptors concentration < 1.4 × $10^{17} cm^{-3}$ and high mobility ≈ 690 $cm^2$/Vs (at 300 K). P-type GaSb crystals were doped with silicon (carrier concentration up to 2 × $10^{19} cm^{-3}$) and with zinc (up to 1 × $10^{19} cm^{-3}$). Tellurium doped n-type GaSb single crystals were obtained with concentration up to 2 × $10^{18} cm^{-3}$. Electrical parameters were investigated by the Hall measurements (300 K and 77 K). Temperature dependent Hall measurements (10 ÷ 300 K) were used to compare the quality of undoped GaSb (obtained from Sb of different purity). Dopant concentration was estimated by glow discharge mass spectroscopy analysis. Axial and radial distribution of carrier concentration were investigated especially for Te-doped crystals (low segregation coefficient of Te in GaSb). Great contribution of compensation and self-compensation mechanisms is shown especially for the beginning part of grown crystals and for low Te-doping level. Radial distribution of physical properties for crystals grown in 〈100〉 direction is not axisymmetrical especially for doped GaSb crystals.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1111-1114
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Silicon Carbide Nanowires Synthesis and Preliminary Investigations
    Autorzy:
    Patyk, J.
    Rich, R.
    Wieligór, M.
    Żerda, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1536454.pdf
    Data publikacji:
    2010-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Je
    81.07.Gf
    81.10.St
    81.20.Ka
    Opis:
    As the field of biotechnology expands and the semiconductor industry approaches the limit of size reduction with conventional materials, these and other fields will increasingly rely on nanomaterials with novel properties. Silicon carbide (SiC) possesses many properties that make it appealing to research and industry: a large band gap, high hardness, high strength, low thermal expansion, chemical inertness, etc. It is known that silicon carbide nanowires can be synthesized through a reaction between silicon vapor and multiwalled carbon nanotubes. This process was refined to produce smaller, straighter nanowires. This was done by analyzing the dependence of the reaction rate on the partial vapor pressure of silicon. The reaction rate was studied by comparison of SiC and multiwalled carbon nanotubes peak intensities in X-ray diffractograms, which produced an estimate of the respective reactions' SiC yields. The particle morphologies were then analyzed with transmission electron microscopy. Finally, Fourier transform infrared spectroscopy was utilized to study the intensities and frequencies of the SiC infrared absorption bands. This data was analyzed with respect to the previously determined yield and particle sizes of the respective SiC nanowire samples.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 3; 480-482
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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