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Wyświetlanie 1-15 z 109
Tytuł:
Carrier Diffusion in the Barrier Enabling Formation of Charged Excitons in InAs/GaAs Quantum Dots
Autorzy:
Karlsson, K. F.
Moskalenko, E. S.
Holtz, P. O.
Monemar, B.
Schoenfeld, W. V.
Garcia, J. M.
Petroff, P. M.
Powiązania:
https://bibliotekanauki.pl/articles/2028833.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.35.-y
78.55.Cr
Opis:
It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very sensitive to the experimental conditions, such as excitation energy and crystal temperature. A qualitative explanation is given in terms of the effective diffusion of the photogenerated carriers, determined by the experimental conditions, which influence the capture probability and hence also the charge state of the quantum dots. This is proposed as a new tool to populate quantum dots with extra electrons in order to study phenomena involving charged excitons.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 387-395
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coherent Manipulations in Semiconductor Nanostructures
Autorzy:
Amand, T.
Marie, X.
Renucci, P.
Vanelle, E.
Powiązania:
https://bibliotekanauki.pl/articles/2027458.pdf
Data publikacji:
2001-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.50.Md
71.35.Ji
71.36.+c
78.47.+p
78.67.De
78.67.Hc
Opis:
This contribution presents recent results on spin manipulation by optical pulses in various semiconductor nanostructures such as quantum wells, microcavities, quantum dots. The potentialities of temporal coherent control, as well as spin dynamics under magnetic field are investigated, using the current ultrafast emission spectroscopy techniques.
Źródło:
Acta Physica Polonica A; 2001, 100, 2; 175-204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Role of Internal Electric Fields in III-N Quantum Structure
Autorzy:
Perlin, P.
Łepkowski, S. P.
Teisseyre, H.
Suski, T.
Grandjean, N.
Massies, J.
Powiązania:
https://bibliotekanauki.pl/articles/2027477.pdf
Data publikacji:
2001-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Hp
78.55.Cr
78.67.Hc
Opis:
Binary nitrides: of wurtzite GaN, AlN, InN, and their solid solutions represent a family of semiconductors of crucial importance for modern optoelectronics. Strained quantum wells, like GaN/AlGaN and specially InGaN/GaN, form active layers of the light emitters working in green-UV part of the spectrum. The operation of these devices strongly depends on the emission spectra of considered quantum structures which are greatly influenced by the presence of built-in electric fields. The electric field acting via quantum confined Stark effect in the mentioned structures changes the energies and intensity of the emitted light. The effect can lead to the spectral shift of a photo- and electroluminescence by many hundreds of meV. In this review we will briefly cover the influence of internal electric fields on both optical and electrical properties of nitride based heterostructures and quantum wells. We would like to draw reader's attention to the usefulness of high-pressure investigation in the study of electric fields in nitrides and to show how the interpretation of these experiments influences the way we calculate the electric fields in the quantum structures.
Źródło:
Acta Physica Polonica A; 2001, 100, 2; 261-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nano-Optics on Individual Quantum Objects - From Single to Coupled Semiconductor Quantum Dots
Autorzy:
Bacher, G.
Schömig, H.
Welsch, M. K.
Scheibner, M.
Seufert, J.
Obert, M.
Forchel, A.
Maksimov, A. A.
Zaitsev, S.
Kulakovskii, V. D.
Powiązania:
https://bibliotekanauki.pl/articles/2035563.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
75.50.Pp
73.21.La
Opis:
Some recent highlights of our optical studies on single and coupled semiconductor quantum dots are reviewed. In the first part, we concentrate on the role of spins and spin-spin interaction in nonmagnetic and magnetic single quantum dots. In the case of strictly resonant excitation of the ground state in self-assembled CdSe/ZnSe quantum dots, we find an exciton spin relaxation time, which exceeds the recombination lifetime significantly. Linear polarization has to be used for these experiments, as the electron-hole exchange interaction lifts the spin degeneracy and the eigenstates are linear combinations of spin-up and spin-down excitons. In a magnetic quantum dot, the exchange interaction between carrier spins and the spins of magnetic ions is shown to be responsible for giant magneto-optical effects. We demonstrate the formation of zero-dimensional magnetic polarons and we succeeded in measuring the magnetization on a scale of a few nanometers using the characteristic photoluminescence signal of individual quantum dots as experimental monitor. The second part is devoted to pairs of single quantum dots. On one hand, single exciton tunneling within an individual quantum dot pair is demonstrated studying single pairs of vertically correlated strain-induced and self-organized quantum dots. On the other hand, we show that in a pair of lithographically defined single dots with strongly different g-factors the energy spacing between the dot ground states can be tuned in an external magnetic field by about 10 meV, giving access to a controlled coupling between two individual quantum dots.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 475-494
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of InAs Quantum Dots
Autorzy:
Willander, M.
Zhao, Q. X.
Jacob, A. P.
Wang, S. M.
Wei, Y. Q.
Powiązania:
https://bibliotekanauki.pl/articles/2035579.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Cr
Opis:
InAs quantum dots grown on GaAs substrate were investigated by optical spectroscopy. We particularly emphasized on the photoluminescence intensity, the stability of the photoluminescence intensity versus temperatures and wavelength of the InAs dot emission at various thermal treatments and different structures. We found that hydrogen can strongly passivate nonradiative centers without causing any structure degradation, and both n- and p-type modulation doping can reduce the decrease in the photoluminescence intensity when the sample temperature increases from the helium temperature to room temperature. The emission wavelength and the efficiency of the InAs quantum dots can also be manipulated by choosing proper materials of cap layer.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 567-576
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Self-Assembled CdTe/ZnTe Quantum Dots
Autorzy:
Kowalik, K.
Kudelski, A.
Golnik, A.
Gaj, J. A.
Karczewski, G.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/2035754.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.70.Ej
Opis:
We present microluminescence investigations of self-assembled CdTe/ZnTe quantum dots. The dots proprieties resulting from our studies are: values of optical in-plane anisotropy parameters (electron - heavy hole exchange splitting and orientation of anisotropy) and value of effective Lande factor. Parameters giving information about in-plane anisotropy possess random distribution of values with the exchange splitting from 0 to 240 μeV. The effective Lande factor values for our dots are around g$\text{}^{*}$=-3.2 with a scatter of about 18%. Some PL lines exhibit sudden jumps of energetic position, related to variation of the charge state in their neighborhood.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 539-544
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Real-Space Mapping of Exciton Wave Functions in a Quantum Dot with Near-Field Optical Imaging Spectroscopy
Autorzy:
Saiki, T.
Matsuda, K.
Nomura, S.
Mihara, M.
Aoyagi, Y.
Nair, S.
Takagahara, T.
Powiązania:
https://bibliotekanauki.pl/articles/2036895.pdf
Data publikacji:
2003
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
An exciton confined within a quantum dot acts as a two-level quantum system, and is one of the most promising candidates for quantum computing and quantum information processing. The real-space optical probing of the quantum eigenstates in a single quantum dot and coupled quantum dots should be developed toward the realization of quantum photonic devices, where their wave functions are dynamically controlled by coherent optical techniques. Here we apply near-field photoluminescence imaging spectroscopy with a high spatial resolution of 30 nm to map out the centre-of-mass wave function of an exciton confined in a GaAs quantum dot. The spatial profile of the exciton emission, which reflects the shape of a monolayer-high island, differs from that of biexciton emission, due to different distributions of the polarization field for the exciton and biexciton recombinations.
Źródło:
Acta Physica Polonica A; 2003, 104, 3-4; 281-287
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of an Electric Field on Fine Properties of III-V and II-VI Quantum Dots Systems
Autorzy:
Kowalik, K.
Krebs, O.
Kudelski, A.
Golnik, A.
Lemaître, A.
Senellart, P.
Karczewski, G.
Kossut, J.
Gaj, J.
Voisin, P.
Powiązania:
https://bibliotekanauki.pl/articles/2038219.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.70.Ej
Opis:
We investigate the influence of an electric field on the optical properties of single quantum dots. For sample made of III-V compounds micron-size electro-optical structures were produced in order to apply an electric field in the dot plane. For several individual dots lines significant variations of the anisotropic exchange splitting with the field were observed. On sample made of II-VI compounds we demonstrate the influence of electric field fluctuations on the luminescence of a single quantum dot.
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 177-184
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interacting Electrons and Holes in Quasi-2D Quantum Dots in Strong Magnetic Fields
Autorzy:
Hawrylak, P.
Sheng, W.
Cheng, S.-J.
Powiązania:
https://bibliotekanauki.pl/articles/2038355.pdf
Data publikacji:
2004-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.-b
83.35.-p
73.21.La
71.35.Ji
78.67.Hc
Opis:
Theory of optical properties of interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields is discussed. In two dimensions and the lowest Landau level, hidden symmetries control the interaction of the interacting system with light. By confining electrons and holes into quantum dots hidden symmetries can be removed and the excitation spectrum of electrons and excitons can be observed. We discuss a theory electronic and of excitonic quantum Hall droplets at a filling factorν=2. For an excitonic quantum Hall droplet the characteristic emission spectra are predicted to be related to the total spin of electron and hole configurations. For the electronic droplet the excitation spectrum of the droplet can be mapped out by measuring the emission for increasing number of electrons.
Źródło:
Acta Physica Polonica A; 2004, 106, 3; 403-412
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Internal Transitions of Charged Excitons in AlGaAs/GaAs Lateral Fluctuation Quantum Dots
Autorzy:
Meining, C. J.
Whiteside, V. R.
McCombe, B. D.
Nickel, H. A.
Petrou, A.
Tischler, J. G.
Bracker, A. S.
Gammon, D.
Dzyubenko, A. B.
Powiązania:
https://bibliotekanauki.pl/articles/2038344.pdf
Data publikacji:
2004-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Ji
71.35.Pq
73.21.La
78.55.Cr
78.67.Hc
Opis:
Low temperature measurements of magneto-photoluminescence and optically detected resonance spectroscopy in magnetic fields up to 10~T were carried out on GaAs/Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As quantum well samples grown by molecular beam epitaxy with lateral fluctuation quantum dots produced by growth interruption. Monolayer fluctuations of the quantum well width form lateral quantum dots for which confinement energies are less than Coulomb correlation energies. Five different width quantum wells (2.8-14.1 nm) were grown in a single sample, doped in the barriers with Si donors to allow for photoluminescence of both excitons and trions. We report studies of the optically detected resonance spectra associated with the ensemble photoluminescence of all of the wells including observation of bound-to-continuum internal transitions of trions, both singlet and triplet, and electron cyclotron resonance for the wider wells, which also show a clear bound-to-bound triplet transition. The latter is forbidden by magnetic translational invariance, but can be seen in these samples because this symmetry is broken by the lateral fluctuations, whose characteristic dimensions are greater than the trion orbit size. The two narrowest wells show strong broad optically detected resonance signals associated with inhomogeneously broadened internal transitions of the strongly correlated trions in the lateral dots. The optically detected resonance signals peak well below the calculated positions of electron cyclotron resonance. As expected for localized carriers and excitons, there is no free electron cyclotron resonance. We also present preliminary measurements of optically detected resonance spectra from a single dot.
Źródło:
Acta Physica Polonica A; 2004, 106, 3; 383-393
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photon Correlations and Cross-Correlations from a Single CdTe/ZnTe Quantum Dot
Autorzy:
Couteau, C.
Moehl, S.
Suffczyński, J.
Gaj, J. A.
Tinjod, F.
Gérard, J. M.
Kheng, K.
Mariette, H.
Romestain, R.
Poizat, J. P.
Powiązania:
https://bibliotekanauki.pl/articles/2038216.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
42.50.Dv
Opis:
We report correlation and cross-correlation continuous wave measurements in II-VI quantum dots grown by molecular beam epitaxy. Combination of spectral selection, saturation measurements and good temporal resolution allowed us to see an antibunching effect on photons from radiative recombination of excitons in a single CdTe/ZnTe quantum dot, as well as cross-correlation within the biexciton (X$\text{}_{2}$)-exciton (X) radiative cascade from the same dot. We discuss the results of our experiments in terms of a model of excitonic multitransitions.
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 169-176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
Autorzy:
Chwalisz, B.
Wysmołek, A.
Bożek, R.
Stępniewski, R.
Pakuła, K.
Kossacki, P.
Golnik, A.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2038084.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
68.65.Hb
Opis:
We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 517-521
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin-Dependent Coupling of Charged Quantum Dot Excitons with Continuum States
Autorzy:
Urbaszek, B.
Warburton, R. J.
Karrai, K.
Schulhauser, C.
Högele, A.
McGhee, E. J.
Govorov, A. O.
Gerardot, B. D.
Marie, X.
Amand, T.
Petroff, P. M.
Powiązania:
https://bibliotekanauki.pl/articles/2038350.pdf
Data publikacji:
2004-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
78.67.Hc
Opis:
Magnetic field and temperature dependent photoluminescence studies on neutral and charged excitons in individual InAs quantum dots allow us to uncover different mechanisms by which the discrete quantum dot states are coupled to delocalized continuum states in a quantum well (the wetting layer). The behaviour of the neutral and singly charged excitons can be explained taking only discrete quantum dot states into account. For doubly and triply charged excitons we have to consider spin dependent coherent and incoherent interactions between discrete quantum dot states and delocalized wetting layer states.
Źródło:
Acta Physica Polonica A; 2004, 106, 3; 395-402
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carriers Diffusion in GaAs/AlAs Type II Quantum Well
Autorzy:
Lesiak, A.
Chwalisz, B.
Wysmołek, A.
Potemski, M.
Stępniewski, R.
Thierry-Mieg, V.
Powiązania:
https://bibliotekanauki.pl/articles/2044497.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
Opis:
The micro-photoluminescence of GaAs/AlAs type II double quantum well structure is presented. The specific band alignment of the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to the presence of photo created carriers.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 755-760
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy
Autorzy:
Semenov, A. N.
Solov'ev, V. A.
Meltser, B. Ya.
Lyublinskaya, O. G.
Terent'ev, Ya. V.
Sitnikova, A. A.
Ivanov, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/2044535.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
81.07.Ta
81.15.Hi
81.16.Dn
Opis:
We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4μm. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ga)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5μm has been observed at 80 K.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 859-865
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 109

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