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Tytuł:
Anisotropic Exchange Interaction between p-Shell Electron and s-Shell Hole in CdTe/ZnTe Quantum Dots
Autorzy:
Kazimierczuk, T.
Golnik, A.
Goryca, M.
Wojnar, P.
Gaj, J.
Kossacki, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791334.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Et
Opis:
We study electron-hole exchange interaction in a single CdTe/ZnTe quantum dot by polarization-resolved photoluminescence measurements. We focus on recombination of excitonic states involving p-shell electrons: $X^{2-}$ and $XX^-$. Recombination lines of $X^{2-}$ and $XX^-$ states exhibit fine structure, which can be consistently explained within a model with four parameters $δ_{i}^{αβ}$ representing strength of iso- and anisotropic parts of interaction between s-hole and s- or p-electron.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 882-884
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Atomistic Calculation of Coulomb Interactions in Semiconductor Nanocrystals: Role of Surface Passivation and Composition Details
Autorzy:
Chwastyk, M.
Różanski, P.
Zieliński, M.
Powiązania:
https://bibliotekanauki.pl/articles/1419534.pdf
Data publikacji:
2012-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
78.67.Bf
78.67.Hc
73.20.Fz
71.15.-m
Opis:
We report a theoretical investigation of electronic properties of semiconductor InAs and GaAs nanocrystals. Our calculation scheme starts with the single particle calculation using atomistic tight-binding model including spin-orbital interaction and d-orbitals. Then the exciton binding energies are calculated with screened Coulomb interaction. We study the role of surface passivation effects by varying value of surface passivation potential. We compare results obtained with dot center positioned on different lattice sites thus containing different number of anion and cations. We conclude that passivation of surface states affects significantly single particle energies and the value of electron-hole Coulomb attraction. Interestingly, due to limited screening, the short-range (on-site) contribution to the electron-hole Coulomb attraction plays significant role for small nanocrystals with radius smaller than 1 nm.
Źródło:
Acta Physica Polonica A; 2012, 122, 2; 324-328
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier Diffusion in the Barrier Enabling Formation of Charged Excitons in InAs/GaAs Quantum Dots
Autorzy:
Karlsson, K. F.
Moskalenko, E. S.
Holtz, P. O.
Monemar, B.
Schoenfeld, W. V.
Garcia, J. M.
Petroff, P. M.
Powiązania:
https://bibliotekanauki.pl/articles/2028833.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.35.-y
78.55.Cr
Opis:
It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very sensitive to the experimental conditions, such as excitation energy and crystal temperature. A qualitative explanation is given in terms of the effective diffusion of the photogenerated carriers, determined by the experimental conditions, which influence the capture probability and hence also the charge state of the quantum dots. This is proposed as a new tool to populate quantum dots with extra electrons in order to study phenomena involving charged excitons.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 387-395
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier Dynamics and Dynamic Band-Bending in Type-II ZnTe/ZnSe Quantum Dots
Autorzy:
Syperek, M.
Misiewicz, J.
Chan, C.
Dumcenco, D.
Huang, Y.
Chou, W.
Powiązania:
https://bibliotekanauki.pl/articles/1399095.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Et
78.47.J-
Opis:
Carrier dynamics and dynamic band-bending in self-assembled ZnTe/ZnSe quantum dots have been studied by means of time-resolved photoluminescence experiment at low temperatures. The experiment reveals clearly type-II character of the confinement potential in the dot manifested in: (i) long photoluminescence decay time constant of 28-35 ns, and (ii) temporal shift of the quantum dot peak emission towards low energy following the laser pulse excitation. The magnitude of the spectral shift Δ E depends on the dot size and the power density of excitation pulse. For the dots under study and given experimental conditions Δ E ≈ 28 ÷ 42 meV.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 821-823
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier Trapping in a Quantum Dash: Optical Signatures
Autorzy:
Kaczmarkiewicz, P.
Machnikowski, P.
Kuhn, T.
Powiązania:
https://bibliotekanauki.pl/articles/1403618.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
73.21.La
Opis:
We theoretically study the optical properties and the electronic structure of highly elongated quantum dots (quantum dashes) and show how geometrical fluctuations affect the excitonic spectrum of the system. The dependence of the absorption intensities on the geometrical properties (depth and length) of the trapping center in a quantum dash is analyzed and the dependence of the degree of the linear polarization on these geometrical parameters is studied.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 997-1000
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carriers Diffusion in GaAs/AlAs Type II Quantum Well
Autorzy:
Lesiak, A.
Chwalisz, B.
Wysmołek, A.
Potemski, M.
Stępniewski, R.
Thierry-Mieg, V.
Powiązania:
https://bibliotekanauki.pl/articles/2044497.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
Opis:
The micro-photoluminescence of GaAs/AlAs type II double quantum well structure is presented. The specific band alignment of the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to the presence of photo created carriers.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 755-760
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy
Autorzy:
Gronin, S.
Sorokin, S.
Kazanov, D.
Sedova, I.
Klimko, G.
Evropeytsev, E.
Ivanov, S.
Powiązania:
https://bibliotekanauki.pl/articles/1376051.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
78.55.Et
78.67.Hc
68.65.Fg
Opis:
This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap II-VI heterostructures emitting in the "true" yellow range (560-600 nm) at room temperature. The active region of the structures comprises CdSe quantum dot active layer embedded into a strained $Zn_{1-x}Cd_{x}Se$ (x=0.2-0.5) quantum well surrounded by a Zn(S,Se)/ZnSe superlattice. Calculations of the CdSe/(Zn,Cd)Se/Zn(S,Se) quantum dot-quantum well luminescence wavelength performed using the envelope-function approximation predict rather narrow range of the total $Zn_{1-x}Cd_{x}Se$ quantum well thicknesses (d ≈ 2-4 nm) reducing efficiently the emission wavelength, while the variation of x (0.2-0.5) has much stronger effect. The calculations are in a reasonable agreement with the experimental data obtained on a series of test heterostructures. The maximum experimentally achieved emission wavelength at 300 K is as high as 600 nm, while the intense room temperature photoluminescence has been observed up to λ =590 nm only. To keep the structure pseudomorphic to GaAs as a whole the tensile-strained surrounding $ZnS_{0.17}Se_{0.83}$/ZnSe superlattice were introduced to compensate the compressive stress induced by the $Zn_{1-x}Cd_{x}Se$ quantum well. The graded-index waveguide laser heterostructure with a CdSe/$Zn_{0.65}Cd_{0.35}Se$/Zn(S,Se) quantum dot-quantum well active region emitting at λ =576 nm (T=300 K) with the 77 to 300 K intensity ratio of 2.5 has been demonstrated.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1096-1099
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
CdSe/ZnS Colloidal Quantum Dots with Alloyed Core/Shell Interfaces: A Photoluminescence Dynamics Study
Autorzy:
Dziatkowski, K.
Ratchford, D.
Hartsfield, T.
Li, X.
Gao, Y.
Tang, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1492859.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.47.jd
78.55.Et
Opis:
Time-resolved photon counting technique was employed to study dynamics of photoluminescence from the ensemble and single CdSe/ZnS quantum dots with the alloyed core/shell interfaces. The ensemble data revealed enhanced effect of disorder-induced trap states for increasing emission energy, as implied from the changes in the distribution of total decay rates. The emission trajectories collected for single quantum dots showed familiar, two-state blinking pattern. It suggests that in a large-band-offset CdSe/ZnS system, the introduced alloying of the core-to-shell region cannot smooth enough the confinement potential in order to suppress nonradiative Auger recombination and blinking.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 870-873
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Self-Assembled CdTe/ZnTe Quantum Dots
Autorzy:
Kowalik, K.
Kudelski, A.
Golnik, A.
Gaj, J. A.
Karczewski, G.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/2035754.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.70.Ej
Opis:
We present microluminescence investigations of self-assembled CdTe/ZnTe quantum dots. The dots proprieties resulting from our studies are: values of optical in-plane anisotropy parameters (electron - heavy hole exchange splitting and orientation of anisotropy) and value of effective Lande factor. Parameters giving information about in-plane anisotropy possess random distribution of values with the exchange splitting from 0 to 240 μeV. The effective Lande factor values for our dots are around g$\text{}^{*}$=-3.2 with a scatter of about 18%. Some PL lines exhibit sudden jumps of energetic position, related to variation of the charge state in their neighborhood.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 539-544
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charging Effects in Self-Assembled CdTe Quantum Dots
Autorzy:
Kłopotowski, Ł.
Powiązania:
https://bibliotekanauki.pl/articles/1492785.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
32.60.+i
71.35.Pq
71.55.Gs
Opis:
In this review, we summarize our achievements in controlling and understanding the charging effects in single self-assembled CdTe quantum dots. We start with analysis of the single dot emission spectrum. For excitation densities small enough to ensure only s-shell recombination, we find that for all dots (also those reported by other groups) the same transition sequence is observed. Namely, the neutral exciton recombination has the highest energy while charged exciton and biexciton transitions are redshifted. This observation remains in a stark contrast to self-assembled InGaAs dots, where charged complexes may appear also on the high energy side of the neutral exciton. We explain the universality of the transition sequence assuming domination of the Coulomb correlations over direct, single particle interactions. Furthermore, through measurement of the recombination rates, we gain access to electron and hole wave functions and their redistributions upon changing the dot occupancy. We find that the electron wave function is rather stiff, while the hole wave function is rather soft owing to enhanced correlations in the valence band. We then corroborate these conclusions with the Stark spectroscopy, where we analyze energy shifts due to electric field imposed on dots embedded in a field effect or diode structure. Finally, we use these structures to obtain controllable tuning of the charge state. We discuss different approaches to this task and find the best tuning efficiency for a structure with enhanced valence band confinement.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 819-829
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coherent Manipulations in Semiconductor Nanostructures
Autorzy:
Amand, T.
Marie, X.
Renucci, P.
Vanelle, E.
Powiązania:
https://bibliotekanauki.pl/articles/2027458.pdf
Data publikacji:
2001-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.50.Md
71.35.Ji
71.36.+c
78.47.+p
78.67.De
78.67.Hc
Opis:
This contribution presents recent results on spin manipulation by optical pulses in various semiconductor nanostructures such as quantum wells, microcavities, quantum dots. The potentialities of temporal coherent control, as well as spin dynamics under magnetic field are investigated, using the current ultrafast emission spectroscopy techniques.
Źródło:
Acta Physica Polonica A; 2001, 100, 2; 175-204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Collective Encoding of Quantum Information in a Quantum Dot Register
Autorzy:
Grodecka, A.
Machnikowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/2046914.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
63.20.Kr
03.67.Pp
Opis:
We define the collective logical quantum bit as a state on an array of 2, 4, and 8 quantum dots. We show that such an array can be controlled with less phonon-induced pure dephasing than a single dot. We calculate the dephasing accompanying a single-qubit operation on the collective logical qubit by means of perturbative method describing the open system evolution under arbitrary driving.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 195-200
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Collective Luminescence and Phonon-Induced Processes in Double Quantum Dots
Autorzy:
Machnikowski, P.
Roszak, K.
Sitek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1791287.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.65.Yz
78.67.Hc
03.67.Lx
71.38.-k
73.63.Kv
Opis:
We study the evolution of a quantum state of a double quantum dot system interacting with the electromagnetic environment and with the lattice modes, in the presence of a coupling between the two dots. We propose a unified approach to the simulation of the system evolution under joint impact of the two reservoirs. We discuss the sub- and superradiant radiative decay of the system, the phonon-induced decay of entanglement between the dots, and the transfer of excitation between them.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 818-825
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Collective Spontaneous Emission from a System of Quantum Dots
Autorzy:
Abdussalam, W.
Machnikowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1403617.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
42.50.Ct
03.65.Yz
Opis:
We study the spontaneous emission from a regular lateral array or a randomly distributed ensemble of quantum dots under strong excitation (full inversion) conditions. We focus on the similarities and differences between the cases of random and regular arrangement of the dots and show that there is very little difference between the evolution of luminescence in these two cases, both for identical dots and for a realistically inhomogeneously broadened ensemble. This means that the enhanced emission or superradiance effect is not due to accidental clustering of pairs of dots. Moreover, we point out that observation of an enhanced emission under weak excitation does not prove that true superradiance will develop in a fully inverted system.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 994-996
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Collective Spontaneous Emission from Pairs of Quantum Dots: Long-Range vs. Short-Range Couplings
Autorzy:
Abdussalam, W.
Machnikowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1492857.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
42.50.Ct
03.65.Yz
Opis:
We study the spontaneous emission from a coherently delocalized exciton state in a double quantum dot as a function of the distance between the dots, focusing on the similarities and differences between the cases of radiative (long-range, dipole) and tunnel coupling between the excitons in the dots. We show that there may be no qualitative difference between the collective emission induced by these two coupling types in spite of their essentially different physical properties.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 865-867
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 109

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