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Wyświetlanie 1-15 z 109
Tytuł:
Optically Detected Microwave Resonance and Carrier Dynamics in InAs/GaAs Quantum Dots
Autorzy:
Žurauskienė, N.
Marcinkevičius, S.
Janssen, G.
Goovaerts, E.
Nötzel, R.
Koenraad, P.
Wolter, J.
Powiązania:
https://bibliotekanauki.pl/articles/1178362.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.47.+p
76.70.Hb
Opis:
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied by means of optically detected microwave resonance spectroscopy and time resolved photoluminescence techniques. The results are discussed in terms of trapping and thermal escape of the carriers as well as their relaxation and recombination in quantum dots. The data are compared with those recently obtained on shallowly formed InAs quantum dot structures.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 435-439
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Metalorganic Vapour Phase Epitaxy Growth of A^{III}B^{V} Heterostructures Observed by Reflection Anisotropy Spectroscopy
Autorzy:
Zíková, M.
Hospodková, A.
Pangrác, J.
Vyskočil, J.
Hulicius, E.
Oswald, J.
Komninou, P.
Kioseoglou, J.
Powiązania:
https://bibliotekanauki.pl/articles/1398563.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.07.Ta
78.67.Hc
78.55.Cr
Opis:
Reflectance anisotropy spectroscopy is a useful technique used for in situ observation of the metalorganic vapour phase epitaxy growth, because it does not require vacuum in the reaction chamber. With this method we are able to observe the quantum dot growth, the incorporation of indium or antimony atoms in the layer or the monolayer growth of GaAs. We can also estimate the amount of InAs needed for the quantum dot formation, the time necessary for the quantum dot growth or reveal the unintended growth of InAs quantum dots from large dissolved InAs objects.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-75-A-78
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multi-Scale Simulations of Semiconductor Nanostructures
Autorzy:
Zieliński, M.
Powiązania:
https://bibliotekanauki.pl/articles/1419515.pdf
Data publikacji:
2012-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
78.67.Hc
71.15.-m
71.15.Qe
Opis:
We demonstrate a multi-domain scheme for calculation of electronic and optical properties of semiconductor nanostructures. Three progressively smaller computational domains are used for strain simulation, single particle states calculation and computation of the Coulomb scattering matrix elements. Proposed approach offers a significant reduction of computational time and memory savings without sacrificing the accuracy of obtained spectra. We illustrate this method on the example of InAs/InP self-assembled quantum dots.
Źródło:
Acta Physica Polonica A; 2012, 122, 2; 312-315
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantized Absorption Strength of Multi-Exciton Quantum Dots
Autorzy:
Wójcik, K.
Grodecka, A.
Wójs, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047045.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
78.67.Hc
71.35.-y
Opis:
Energy and absorption/recombination spectra of up to two electron-hole pairs confined in a spherical quantum dot are studied numerically as a function of dot radius (i.e., confinement volume). The transition between fermionic and bosonic behavior of the confined excitons is identified in coincidence with enhancement of low-energy absorption strength.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 423-428
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of InAs Quantum Dots
Autorzy:
Willander, M.
Zhao, Q. X.
Jacob, A. P.
Wang, S. M.
Wei, Y. Q.
Powiązania:
https://bibliotekanauki.pl/articles/2035579.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Cr
Opis:
InAs quantum dots grown on GaAs substrate were investigated by optical spectroscopy. We particularly emphasized on the photoluminescence intensity, the stability of the photoluminescence intensity versus temperatures and wavelength of the InAs dot emission at various thermal treatments and different structures. We found that hydrogen can strongly passivate nonradiative centers without causing any structure degradation, and both n- and p-type modulation doping can reduce the decrease in the photoluminescence intensity when the sample temperature increases from the helium temperature to room temperature. The emission wavelength and the efficiency of the InAs quantum dots can also be manipulated by choosing proper materials of cap layer.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 567-576
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Dots as Sources and Detectors οf Mid- and Far-Infrared Radiation: Theoretical Models
Autorzy:
Vukmirović, N.
Indjin, D.
Ikonić, Z.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791186.pdf
Data publikacji:
2009-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
78.67.Hc
73.63.Kv
85.60.Gz
85.35.Be
Opis:
We present a review of theoretical methods used to study the electronic structure, optical and transport properties of intraband optoelectronic devices based on self-assembled quantum dots.
Źródło:
Acta Physica Polonica A; 2009, 116, 4; 464-467
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin-Dependent Coupling of Charged Quantum Dot Excitons with Continuum States
Autorzy:
Urbaszek, B.
Warburton, R. J.
Karrai, K.
Schulhauser, C.
Högele, A.
McGhee, E. J.
Govorov, A. O.
Gerardot, B. D.
Marie, X.
Amand, T.
Petroff, P. M.
Powiązania:
https://bibliotekanauki.pl/articles/2038350.pdf
Data publikacji:
2004-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
78.67.Hc
Opis:
Magnetic field and temperature dependent photoluminescence studies on neutral and charged excitons in individual InAs quantum dots allow us to uncover different mechanisms by which the discrete quantum dot states are coupled to delocalized continuum states in a quantum well (the wetting layer). The behaviour of the neutral and singly charged excitons can be explained taking only discrete quantum dot states into account. For doubly and triply charged excitons we have to consider spin dependent coherent and incoherent interactions between discrete quantum dot states and delocalized wetting layer states.
Źródło:
Acta Physica Polonica A; 2004, 106, 3; 395-402
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy and Optical Absorption Spectra of Multiply Charged Anisotropic Quantum Boxes
Autorzy:
Trojnar, A.
Małachowski, T.
Wójs, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047372.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
78.67.Hc
71.35.-y
71.35.Pq
Opis:
Using a simple model of a two-dimensional rectangular quantum box we study the effects of size and anisotropy on the energy and photoluminescence spectra of neutral and charged quantum dots. The competition of symmetries and energy/length scales of the free exciton or trion and of the confining potential is analyzed. The numerical calculations consisted of the diagonalization of the few-electron-hole Hamiltonian matrices in the full configuration-interaction basis, with the simultaneous resolution of the conserved orbital and spin quantum numbers.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 173-176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Optical Excitonic Aharonov-Bohm Effect in a Few Nanometer Wide Type-I Nanorings
Autorzy:
Tadić, M.
Arsoski, V.
Čukarić, N.
Peeters, F.
Powiązania:
https://bibliotekanauki.pl/articles/1537808.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
78.67.Hc
Opis:
The optical excitonic Aharonov-Bohm effect in type-I three-dimensional (In,Ga)As/GaAs nanorings is theoretically explored. The single-particle states of the electron and the hole are extracted from the effective mass theory in the presence of inhomogeneous strain, and an exact numerical diagonalization approach is used to compute the exciton states and the oscillator strength $f_{x}$ for exciton recombination. We studied both the large lithographically-defined and small self-assembled rings. Only in smaller self-assembled nanorings we found optical excitonic Aharonov-Bohm effect. Those oscillations are established by anticrossings between the optically active exciton states with zero orbital momentum. In lithographically defined rings, whose average radius is 33 nm, $f_{x}$ shows no oscillations, whereas in the smaller self-assembled nanoring with average radius of 11.5 nm oscillations in $f_{x}$ for the ground exciton state are found as function of the magnetic field that is superposed on a linear dependence. These oscillations are smeared out at finite temperature, thus photoluminescence intensity exhibits step-like variation with magnetic field even at temperature as small as 4.2 K.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 974-977
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Identification of Optical Transitions from CdTe and CdMnTe Quantum Dots Embedded in ZnTe Nanowires
Autorzy:
Szymura, M.
Kłopotowski, Ł.
Wojnar, P.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1399096.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Uh
78.67.Hc
Opis:
We study photoluminescence properties of CdTe and CdMnTe quantum dots embedded in ZnTe nanowires. The nanowires were grown by molecular beam epitaxy, applying the vapor-liquid-solid growth mechanism. Linear polarization anisotropy measurements allow us to assess that the excitonic transitions originate from a single nanowire. We identify the optical transitions by comparing observed spectroscopic shifts with the universal emission pattern from the epitaxial CdTe dots. We support this identification by analyzing the photoluminescence intensity dependence on excitation power.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 824-826
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Epitaxial Growth and Optical Properties of PbTe/CdTe Semiconductor Heterostructures
Autorzy:
Szot, M.
Kowalczyk, L.
Smajek, E.
Domukhovski, V.
Domagała, J.
Łusakowska, E.
Taliashvili, B.
Dziawa, P.
Knoff, W.
Wiater, M.
Wojtowicz, T.
Story, T.
Powiązania:
https://bibliotekanauki.pl/articles/1811996.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Hx
78.67.De
78.67.Hc
78.67.Pt
Opis:
Growth optimization, optical and structural properties of PbTe/CdTe multilayers grown by molecular beam epitaxy on GaAs (001) as well as on $BaF_2$ (111) substrates is reported. An intense photoluminescence in the mid-infrared region is observed from PbTe quantum wells excited with 1.17 eV pulsed YAG:Nd laser. The energy of the emission peak shows blue shift with decreasing PbTe well width and has a positive temperature coefficient. The influence of thermal annealing on photoluminescence spectra of PbTe/CdTe multilayers grown on $BaF_2$ substrate is discussed.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1391-1396
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier Dynamics and Dynamic Band-Bending in Type-II ZnTe/ZnSe Quantum Dots
Autorzy:
Syperek, M.
Misiewicz, J.
Chan, C.
Dumcenco, D.
Huang, Y.
Chou, W.
Powiązania:
https://bibliotekanauki.pl/articles/1399095.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Et
78.47.J-
Opis:
Carrier dynamics and dynamic band-bending in self-assembled ZnTe/ZnSe quantum dots have been studied by means of time-resolved photoluminescence experiment at low temperatures. The experiment reveals clearly type-II character of the confinement potential in the dot manifested in: (i) long photoluminescence decay time constant of 28-35 ns, and (ii) temporal shift of the quantum dot peak emission towards low energy following the laser pulse excitation. The magnitude of the spectral shift Δ E depends on the dot size and the power density of excitation pulse. For the dots under study and given experimental conditions Δ E ≈ 28 ÷ 42 meV.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 821-823
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Single GaN/AlGaN Quantum Dot Spectroscopy
Autorzy:
Surowiecka, K.
Wysmołek, A.
Stępniewski, R.
Bożek, R.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2047382.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The detailed analysis of the emission from these structures enables the observation of pairs of lines separated by the energy up to 3 meV. They behave in a different way under different excitation power that suggests that this doublet structure can be associated with the exciton and trion (or biexciton recombination). It is observed that for different quantum dots the energy of the charged exciton complex emission could be higher or lower than the neutral exciton one. It is discussed in terms of a competition between attractive e-h and repulsive e-e (h-h) Coulomb interaction that occurs because of the existence of the built-in electric field that separates electrons and holes in the dot.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 233-236
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temporal Evolution of Multi-Carrier Complexes in Single GaN/AlGaN Quantum Dots
Autorzy:
Surowiecka, K.
Wysmołek, A.
Stępniewski, R.
Bożek, R.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2044542.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The narrow lines in the microphotoluminescence spectra due to the single quantum dots are observed. Both energy and intensity of these lines show temporal fluctuations. Statistical analysis based on the correlation matrix allowed us to identify objects, which are affected by photo-induced electric field fluctuations. Relations between emission lines participating in the spectrum are discussed.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 879-884
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Time Evolution of the Microluminescence Energy οf GaN/AlGaN Quantum Dots
Autorzy:
Surowiecka, K.
Wysmołek, A.
Stępniewski, R.
Bożek, R.
Pakuła, K.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791354.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Time evolution of the microphotoluminescence from low-density GaN/$Al_{x}Ga_{1-x}N$ quantum dots grown by metal organic chemical vapor deposition using in situ etching of AlGaN is presented. The observed effect is related to the energy changes that begin immediately after sample illumination with the exciting laser light and saturate after some time. Typically, the luminescence energy decreases and the change is exponential with characteristic times in a range between several dozen and several hundred seconds. However, sometimes we observed the energy increase with characteristic times in a range between several and a few hundred seconds. The obtained results are discussed in terms of the metastable change of the electric field, induced by spontaneous polarization present in GaN/AlGaN structure (in the growth direction), and strain- or defect-induced changes of the electric field in the vicinity of the dot.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 933-935
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 109

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