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    Wyświetlanie 1-6 z 6
    Tytuł:
    Optical Response of La$\text{}_{1-x}$MnO$\text{}_{3}$/Al$\text{}_{2}$O$\text{}_{3}$ Films
    Autorzy:
    Babonas, G.-J.
    Reza, A.
    Szymczak, R.
    Baran, M.
    Fröhlich, K.
    Jasutis, V.
    Diduszko, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035658.pdf
    Data publikacji:
    2003-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Li
    75.70.Ak
    Opis:
    La$\text{}_{1-x}$MnO$\text{}_{3}$ films grown by metal organic chemical vapor deposition technique on r-plane cut Al$\text{}_{2}$O$\text{}_{3}$ substrates were investigated. The change of the optical response over the La$\text{}_{1-x}$MnO$\text{}_{3}$/Al$\text{}_{2}$O$\text{}_{3}$ sample surface was investigated along with the temperature dependence of magnetization. The mostly pronounced difference in the spectra of dielectric function occurred in the region of the d-d transitions of Mn-ions. The changes in the optical spectra and magnetic properties were correlated to the structural features of thin film.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 1; 77-83
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and Optoelectronic Properties of In-Zn-S sprayed Layers
    Autorzy:
    Lazzez, S.
    Boubaker, K.
    Ben Nasrallah, T.
    Amlouk, M.
    Belgacem, S.
    Mnari, M.
    Chtourou, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812052.pdf
    Data publikacji:
    2008-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.Dp
    78.66.Li
    78.30.Am
    Opis:
    In this work, In-Zn-S thin layers were prepared using the spray pyrolysis technique on glass substrates at 320°C. The molar ratio between zinc and indium $x=[Zn^{2+}]//[In^{3+}]$ was varied in 0-0.4 domain whereas $[S^{2-}]//[In^{3+}]$ one was taken constant equal to 2. The atomic composition was carried out with the atomic absorption. The structural study of all layers via X-ray diffraction and atomic force microscopy shows that the layer, obtained using x=0 is formed by binary material $In_2S_3$ with a principal orientation along (400). When the composition increases the same study depicts the presence of other materials such as ZnO, ZnS, and $ZnIn_2S_4$. On the contrary, for x=0.4, the film is mainly formed by the ternary compound $ZnIn_2S_4$ which crystallizes in cubic phase. Moreover, the optical analysis via the transmittance, reflectance as well as the photocurrent reveals that the band gap energy $E_g$ increases slightly as a function of the x composition ($E_g$ varies from 2.6 to 2.9 eV).
    Źródło:
    Acta Physica Polonica A; 2008, 114, 4; 869-880
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Terahertz Emission from Surfaces of Cu(InGa)Se_2 Layers
    Autorzy:
    Koroliov, A.
    Arlauskas, A.
    Balakauskas, S.
    Šoliūnas, M.
    Maneikis, A.
    Krotkus, A.
    Šetkus, A.
    Tamošiūnas, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399106.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Li
    88.40.jn
    77.55.hf
    Opis:
    In this contribution, we report on investigations of THz emission from $Cu(In,Ga)Se_2$ layers, deposited from a single copper-deficient sputtering target. Emission from $Cu(In,Ga)Se_2$ layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type $Cu(In,Ga)Se_2$ and n-type ZnO layers.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 846-848
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Relative Reflection Difference as a Method for Measuring the Thickness of the Exfoliated MoSe₂ Layers
    Autorzy:
    Łempicka, K.
    Norowski, K.
    Grzeszczyk, M.
    Król, M.
    Lekenta, K.
    Babiński, A.
    Piętka, B.
    Szczytko, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033778.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.20.dd
    78.20.Ci
    78.30.-j
    78.66.Li
    Opis:
    We propose a method for measuring the thickness of the exfoliated MoSe₂ layers deposited on Si/SiO₂ substrate, based on the reflectance measurements performed with laser light illumination at two different wavelengths: red and green from confocal microscope at room temperature. We demonstrate the correlation between the number of layers in a flake and the value of its relative reflection difference. We applied the transfer matrix method to calculate the reflectivity and verify our experimental results. The approach proposed by us allows for fast and automatic verification of the exfoliated MoSe₂ layers thickness on large areas of the substrate.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 316-318
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Structural Studies of Sol-Gel Deposited Nanostructured CdO Thin Films: Annealing Effect
    Autorzy:
    Abdolahzadeh Ziabari, A.
    Ghodsi, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1493680.pdf
    Data publikacji:
    2011-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Ci
    78.66.Li
    78.67.-n
    81.20.Fw
    Opis:
    Nanocrystalline CdO thin films were prepared by sol-gel dip-coating method using a different solution. The as-deposited films were subjected to drying temperature of 120° in air. The prepared films were annealed in different temperatures of 200, 300 and 400°C. The characterization of samples was carried out by X-ray diffraction, scanning electron microscopy and UV-VIS spectroscopy. Results show that the samples are polycrystalline in nature and the crystallinity of the films improves with temperature. The average grain size is in the range of 19-34 nm. It was observed that the optical parameters of the films were affected by annealing temperature.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 3; 536-540
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Confocal Microscope Studies of $MoS_{2}$ Layer Thickness
    Autorzy:
    Grzeszczyk, M.
    Gołasa, K.
    Piętka, B.
    Babiński, A.
    Szczytko, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1377207.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Ci
    63.20.dd
    78.30.-j
    78.66.Li
    Opis:
    We have been studying micro-luminescence of various exfoliated $MoS_{2}$ flakes using a confocal microscope. A crucial issue is to determine thickness of the investigated layer. The common way - using atomic force microscopy, electron microscopy or the Raman spectroscopy - requires moving the sample out from the confocal microscope experimental setup and looking for a particular exfoliated flake hidden among thousands of others. In order to preliminarily determine thickness of investigated layers we have performed a study on optical reflectivity and compared the results with the Raman spectroscopy investigations. In this way we were able to calibrate our experimental setup. Optical measurements are much faster than the Raman spectroscopy and can give a good estimation of $MoS_{2}$ thickness.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1207-1208
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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