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Wyświetlanie 1-15 z 52
Tytuł:
The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
Autorzy:
Alevli, M.
Ozgit, C.
Donmez, I.
Powiązania:
https://bibliotekanauki.pl/articles/1492662.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
78.66.Fd
78.55.Et
Opis:
In this work, we explored the influence of the low growth temperatures on the structural and optical properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia $(NH_3)$ plasma. Structural and optical results show that AlN films grown by self-limited plasma enhanced atomic layer deposition are polycrystalline at temperatures as low as 100C.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-058-A-060
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrogen Tuning of (InGa)(AsN) Optical Properties
Autorzy:
Baldassarri H. v. H., G.
Ranalli, F.
Bissiri, M.
Gaspari, V.
Polimeni, A.
Capizzi, M.
Nucara, A.
Geddo, M.
Fischer, M.
Reinhardt, M.
Forchel, A.
Powiązania:
https://bibliotekanauki.pl/articles/2028813.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
71.55.Eq
78.55.Cr
Opis:
The effects of atomic hydrogen irradiation on the optical properties of (InGa)(AsN) single quantum wells investigated by means of photoluminescence spectroscopy. For increasing hydrogen dose, the photoluminescence band peak energy of each nitrogen-containing sample blue-shifts and for high hydrogen dose it reaches that of a corresponding nitrogen-free reference sample. This effect is accompanied by a broadening of the photoluminescence band line width and by a decrease in the photoluminescence efficiency. Thermal annealing at 550ºC fully restores the original band gap value and the photoluminescence line width of the sample before hydrogenation. An interpretation of these phenomena is proposed in terms of an H perturbation of the charge distribution around the strongly electronegative N atoms, leading most likely to the formation of H-N complexes, and to an ensuing electronic passivation of nitrogen.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 373-378
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hopping Excitons in GaInNAs - Simulation οf Micro- and Macrophotoluminescence Spectra
Autorzy:
Baranowski, M.
Latkowska, M.
Kudrawiec, R.
Misiewicz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1492914.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.55.Cr
78.20.Bh
Opis:
Model of hopping excitons has been applied to explain the origin of sharp lines observed in microphotoluminescence spectra of GaInNAs layers. It has been shown that shape of the micro- and macrophotoluminescence spectra results from the exciton hopping between localizing centers and this phenomenon is responsible for the observation of sharp lines in microphotoluminescence experiment. In addition, the influence of different model parameters on photoluminescence spectra and their characteristic parameters such as the Stokes shift and full width at half maximum has been investigated.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 899-901
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Hydrogen on the Electronic Properties of GaAs$\text{}_{1-y}$N$\text{}_{y}$ Heterostructures
Autorzy:
Bissiri, M.
Gaspari, V.
Baldassarri H. v. H., G.
Ranalli, F.
Polimeni, A.
Capizzi, M.
Nucara, A.
Geddo, M.
Fischer, M.
Reinhardt, M.
Forchel, A.
Powiązania:
https://bibliotekanauki.pl/articles/2028796.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
71.55.Eq
78.55.Cr
Opis:
We have performed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs$\text{}_{1-y}$N$\text{}_{y}$/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to: (i) a progressive passivation of N-related recombination lines for low N content (y≈ 0.001); (ii) a sizable blue shift of the band gap in the "alloy" limit (y≈0.01). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N$\text{}^{-}$ -H$\text{}^{+}$ complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs$\text{}_{1-y}$N$\text{}_{y}$.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 365-371
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Cavity Enhanced Photonic Devices
Autorzy:
Bugajski, M.
Muszalski, J.
Ochalski, T.
Kątcki, J.
Mroziewicz, B.
Powiązania:
https://bibliotekanauki.pl/articles/2030303.pdf
Data publikacji:
2002-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.66.Fd
78.55.-m
78.67.De
78.45.+h
78.47.+p
Opis:
In the present paper we review our recent works on technology, basic physics, and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In$\text{}_{x}$Ga$\text{}_{1-x}$As/GaAs planar microcavities with distributed Bragg reflectors. In general, observed trends are in agreement with theoretical predictions. We also demonstrate the operation of resonant-cavity light emitting diodes and optically pumped vertical cavity light emitting diodes developed recently at the Department of Physics and Technology of Low-Dimensional Structures of the Institute of Electron Technology.
Źródło:
Acta Physica Polonica A; 2002, 101, 1; 105-118
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
Autorzy:
Chwalisz, B.
Wysmołek, A.
Bożek, R.
Stępniewski, R.
Pakuła, K.
Kossacki, P.
Golnik, A.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2038084.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
68.65.Hb
Opis:
We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 517-521
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Near IR Refractive Index for GaInN Heavily Doped with Silicon
Autorzy:
Cywiński, G.
Kudrawiec, R.
Rzodkiewicz, W.
Kryśko, M.
Litwin-Staszewska, E.
Misiewicz, J.
Skierbiszewski, C.
Powiązania:
https://bibliotekanauki.pl/articles/1791356.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
78.66.Fd
81.15.Hi
68.55.-a
78.20.-e
Opis:
The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of $Ga_{0.998}In_{0.002}N:Si$ has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× $10^{20} cm^{-3}$ and 67 $cm^{2}$/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 936-938
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Faraday Rotation in Multiple Quantum Wells of GaAs/AlGaAs
Autorzy:
Dudziak, E.
Bożym, J.
Pruchnik, D.
Wasilewski, Z. R.
Powiązania:
https://bibliotekanauki.pl/articles/1952529.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ls
73.20.Dx
78.66.Fd
Opis:
We report on the results of first measurements of the Faraday rotation of modulated n-doped multiple quantum wells of GaAs/Al$\text{}_{x}$Ga$\text{}_{1-x}$As (x = 0.312). The measurements have been performed in the magnetic fields up to 13 T at the temperature of 2 K, in the spectral region of interband transitions. A rich structure of magneto-excitons has been found in the measured spectra. Faraday rotation (phase) measurements are proposed as an alternative method to photoluminescence excitation for investigations of magneto-excitons in quantum wells. The dependence of the measured Faraday rotation on magnetic field and hypothetical connections with quantum Hall effect are also discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1022-1026
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Large Filling-Factor-Dependent Spin Splitting in Magnetooptic Kerr Effect in GaAs/AlGaAs Multiple Quantum Wells
Autorzy:
Dudziak, E.
Bozym, J.
Pruchnik, D.
Wasilewski, Z. R.
Powiązania:
https://bibliotekanauki.pl/articles/1969050.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ls
73.20.Dx
78.66.Fd
Opis:
Magnetooptic Kerr effect in GaAs/Al$\text{}_{0.312}$Ga$\text{}_{0.688}$As multiple quantum wells was investigated in the integer quantum Hall regime. The measurements have been performed in magnetic fields up to 14.5 T, at the temperature of 1.8 K. Experimental data indicate the discontinuous behavior of the magnetooptic Kerr effect spectrum as a function of the filling factor. For odd filling factor values ν=3 and 5 we observe the large spin splitting. The effects cannot be explained in the one-particle model.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 291-296
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Electron Transition in Homoepitaxial GaN Layers
Autorzy:
Fiorek, A.
Baranowski, J. M.
Wysmołek, A.
Pakuła, K.
Wojdak, M.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1968067.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.55.Cr
Opis:
It is shown that the luminescence mapping is a powerful method to help identify optical transitions. Two-electron transition was identified in the homoepitaxial GaN layer by this technique. It was found that the donor and acceptor bound exciton emissions are spatially displaced and show intensity maxima at different places of the epitaxial layer. It was also found that the 3.45 eV line, suspected as "two-electron transition", follows exactly the donor bound exciton spatial distribution. Donor bound exciton recombines leaving the neutral donor in the excited 2s state. Thus, 1s-2s excitation being equal to 22 meV corresponds to 29 meV hydrogenic donor binding energy. This is the first identification of the two-electron transition in GaN.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 742-744
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Holz, P. O.
Bergman, J. P.
Monemar, B.
Regiński, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1952469.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.47.+p
73.20.Jc
Opis:
The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps$\text{}^{-1}$. Such inter-island migration processes have been observed till now only in growth interrupted structures.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1007-1011
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures
Autorzy:
Godlewski, M.
Monemar, B.
Anderson, T. G.
Tsimperidis, I.
Gregorkiewicz, T.
Ammerlaan, C. A. J.
Muszalski, J.
Kaniewska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1934059.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Jd
78.66.Fd
73.40.Kp
73.20.Dx
Opis:
Optically detected cyclotron resonance is used for the identification of recombination transitions of two-dimensional electron gas in A1GaAs/GaAs heterostructures. Two photoluminescence emissions are attributed to the recombination of the two-dimensional electron gas. These are the so-called H-band and the Fermi level singularity photoluminescence. Optical detection of cyclotron resonance is related to the change of the band bending across the GaAs active layer and the AlGaAs barrier, which is caused by impact ionization of shallow donors in the barrier region. Influence of a long range carrier scattering on ionized impurities on a mobility of the two-dimensional carriers is studied.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 990-994
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of GaN Pressure Grown Crystals for Epitaxy of GaN-Based Structures
Autorzy:
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/2014135.pdf
Data publikacji:
2000-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
73.61.Ey
81.10.-h
81.05.Dz
Opis:
The results obtained with the use of the pressure grown GaN single crystalline substrates allow to draw the following conclusions important for the construction of In-free UV light emitting diodes and lasers and InGaN-based high power blue lasers: 1. The application of the pressure grown GaN single crystalline substrates allows to grow near dislocation free layer structures by both metal organic chemical vapor deposition and MBE. 2. The elimination of dislocations leads to highly efficient UV emission from GaN and GaN/AlGaN quantum wells which is impossible for strongly dislocated structures grown on sapphire. 3. At high excitations (i.e. in lasers) dislocations are effective nonradiative recombination centers also in the InGaN containing structures, therefore the elimination of these defects is crucial for better performance of blue lasers. 4. The analysis of microstructural and optical properties of the InGaN containing dislocation free structures shows that the main mechanisms of carrier localization in InGaN are not related with the nm scale compositional fluctuations in InGaN. In the paper, the optical and structural properties of the near dislocation free GaN-based structures leading to the above conclusions are discussed.
Źródło:
Acta Physica Polonica A; 2000, 98, 3; 183-193
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Application of High Pressure in Physics and Technology of III-V Nitrides
Autorzy:
Grzegory, I.
Leszczyński, M.
Krukowski, S.
Perlin, P.
Suski, T.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2030388.pdf
Data publikacji:
2001-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.-h
78.66.Fd
73.61.Ey
82.60.Lf
78.55.Cr
Opis:
Due to high bonding energy of N$\text{}_{2}$ molecule, the III-V semiconducting nitrides, especially GaN and InN require high N$\text{}_{2}$ pressure to be stable at high temperatures necessary for growth of high quality single crystals. Physical properties of GaN-Ga(l)-N$\text{}_{2}$ system are discussed in the paper. On the basis of the experimental equilibrium p-T-x data and the quantum-mechanical modeling of interaction of N$\text{}_{2}$ molecule with liquid Ga surface, the conditions for crystallization of GaN were established. The crystals obtained under high pressure are of the best structural quality, having dislocation density as low as 10-100 cm$\text{}^{-2}$ which is several orders of magnitude better than in any other crystals of GaN. The method allows to grow both n-type substrate crystals for optoelectronics and highly resistive crystals for electronic applications. The physical properties of the pressure grown GaN measured to characterize both point defects and extended defects in the crystal lattice are discussed in the paper. A special attention is paid to the application of high pressure to reveal the nature of the point defects in the crystals and electric fields in GaN-based quantum structures. Due to their very high structural quality, the pressure grown crystals are excellent substrates for epitaxial growth of quantum structures. It opens new possibilities for optoelectronic devices, especially short wavelength high power lasers and efficient UV light emitting diodes. This is due to the strong reduction in dislocation densities in relation to existing structures (10$\text{}^{6}$-10$\text{}^{8}$ cm$\text{}^{-2}$) which are grown on strongly mismatched sapphire and SiC substrates. The experimental results on the epitaxial growth and physical properties of GaN-based device structures supporting above conclusions are discussed in the paper. The current development of blue laser technology in High Pressure Research Center is shortly reviewed.
Źródło:
Acta Physica Polonica A; 2001, 100, Supplement; 57-109
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reflectivity Studies of Lattice Vibrations and Free Electrons in MBE Grown GaN Epitaxial Layers
Autorzy:
Iller, A.
Jantsch, W.
Marks, J.
Pastuszka, B.
Diduszko, R.
Powiązania:
https://bibliotekanauki.pl/articles/1969092.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.-e
78.66.Fd
Opis:
We have observed a sharp structure with a peak at the frequency of the E$\text{}_{1}$-TO phonon in the reflectivity of GaN epitaxial layers grown by molecular beam epitaxy on Si substrates. The simulations of the reflection performed show that the observed shape can be explained by assuming both collective lattice vibrations and free carriers contributions to the dielectric function. We assumed the Lorentz oscillator to describe the contribution of the collective lattice vibrations and the Drude-Lorentz model for that of free carriers. Fitting the calculated reflectivity to the spectrum obtained experimentally allowed us to evaluate lattice and free carrier parameters.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 336-340
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 52

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