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    Wyświetlanie 1-8 z 8
    Tytuł:
    Studies of Response of Metal - Porous Silicon Structures to Microwave Radiation
    Autorzy:
    Stupakova, J.
    Ašmontas, S.
    Gradauskas, J.
    Zagadskij, V.
    Shatkovskis, E.
    Sužiedėlis, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047172.pdf
    Data publikacji:
    2006-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.30.+q
    78.55.Mb
    85.30.De
    Opis:
    Structures containing layers of porous silicon with two metal contacts are investigated. Porous silicon is manufactured by anodizing p-type crystalline silicon plates of resistivity of 0.4 Ω cm. Contacts for the samples are made by additional boron doping of the surface and by thermal evaporation of aluminium. Resistance and current-voltage characteristics are investigated. Response of the porous silicon layer containing structures under action of pulsed microwave radiation was investigated for the first time. The origin of the response is discussed.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 6; 817-822
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effects of Alkali Metallization on the Luminescence Degradation of Porous Silicon
    Autorzy:
    Kayahan, E.
    Özer, M.
    Oral, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1491506.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Ap
    78.55.Mb
    Opis:
    In this study, change in the intensity and stability of photoluminescence obtained by porous silicon were investigated with illumination time and metallization state. The porous silicon samples were metallized by immersing into solutions containing 3 mM $LiNO_3,$ $KNO_3$ and $NaNO_3$ metal salts using immersing plating method. The surface bond configurations of porous silicon were monitored by the Fourier transmission infrared spectroscopy and the results showed that the surfaces of the samples were oxidized after the metallization. The photoluminescence intensity increased after certain critical immersion times and photoluminescence spectrum shifted towards the high energy region after the metallization. Photoluminescence intensity of metallized porous silicon samples was more stable than as-anodized porous silicon samples. The experimental results suggested the possibility that oxygen and/or alkali metal (Li, K and Na) passivation of porous silicon surface could be a suitable way to obtain an efficient and stabilized photoluminescence.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 281-283
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Variable-Energy Positron Annihilation as Highly Sensitive Nanoporosimetry for Porous Thin Films
    Autorzy:
    Ito, K.
    Kobayashi, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/2042214.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    78.55.Mb
    Opis:
    Positron annihilation was applied to measuring critical pore sizes in various materials. In recent years, positron annihilation with a variable-energy positron beam has emerged as a powerful tool for the investigation of porous thin films synthesized as low-k dielectrics, high performance gas sensor materials, and so on. This paper is a brief overview of recent progress in nanopore characterization of thin films by means of positron annihilation with a description of several important issues relevant to positron annihilation.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 717-723
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Porous Silicon Avalanche LEDs and their Applications in Optoelectronics and Information Displays
    Autorzy:
    Jaguiro, P.
    Katsuba, P.
    Lazarouk, S.
    Smirnov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047875.pdf
    Data publikacji:
    2007-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Mb
    78.60.Fi
    85.60.Jb
    85.60.Pg
    Opis:
    The use of silicon based light emitting diodes may completely solve the problem of low compatibility of optoelectronics elements and silicon chip. At present time the most suitable kinds of Si-LEDs are monocrystal and porous silicon avalanche LEDs. They have advantages such as long operation lifetime (>10000 hours), continuous spectrum, which allows to filter RGB colors, operation voltages (<12 V), extremely sharp voltage-current characteristic, nanosecond response time, and high high operation current densities (up to 8000 A/cm$\text{}^{2}$ in pulse mode). Rather low energy efficiency (<1%) is not so significant for near to eyes (NTE) microdisplays. These advantages open a way to design a high performance and cost effective passive addressed microdisplays.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 5; 1031-1036
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Porous Silicon Formation by Metal-Assisted Chemical Etching
    Autorzy:
    Lipinski, M.
    Cichoszewski, J.
    Socha, R.
    Piotrowski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807542.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.16.Rf
    81.05.Rm
    78.55.Mb
    61.43.Gt
    78.67.Bf
    Opis:
    The method of metal-assisted chemical etching produces a porous silicon layer. Palladium particles are deposited on both: multi-crystalline and Czochralski grown mono-crystalline Si wafers by immersing them in $PdCl_{2}$ solution for 1 to 3 min. X-ray photoelectron spectroscopy analysis of Pd clusters shows a decrease in Pd metal fraction by prolonged immersion time t from $F_{Pd}$ = 71.2% for t = 1 min to $F_{Pd}$ = 61.4% for t = 3 min due to Pd oxidation process. Porous silicon forms by metal-assisted chemical etching in a HF:$H_{2}O_{2}$ solution for 1 to 3 min. Photoluminescence of metal-assisted chemical etched samples exhibits the peak with a maximum of t at λ=650 nm independent of the etching time. Simultaneously, the intensity of the photoluminescence spectra strongly decreases for extended etching time t = 3 min. This behavior is attributed to increasing layer macroporosity, which strongly reduces amount of light emitting nanocrystallites.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-117-S-119
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence of Lanthanides from Xerogels Embedded in Mesoporous Matrices
    Autorzy:
    Gaponenko, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1814047.pdf
    Data publikacji:
    2007-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.20.Fw
    83.80.Jx
    81.05.Rm
    78.55.Mb
    61.43.Gt
    82.45.Cc
    42.70.Qs
    78.55.Ap
    78.60.-b
    Opis:
    The report summarizes peculiarities of synthesis and luminescence properties of porous silicon, porous anodic alumina and artificial opals with the inclusions of sol-gel derived oxides (xerogels), doped with Er, Tb, and Eu. Origin of strong luminescence of lanthanides from xerogels in mesoporous matrices is discussed.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 5; 737-749
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties of BN and BBi Compounds
    Autorzy:
    Yalcin, B.
    Ustundag, M.
    Aslan, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1292780.pdf
    Data publikacji:
    2014-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    71.15.Mb
    78.20.Ci
    Opis:
    We have investigated optical properties which are very important for optoelectronic devices, such as laser modulators, photo detectors, optical amplifier and high efficient solar cells of BN and BBi using the density functional theory based on full potential linearized augmented plane wave method as implemented in Vienna ab-initio simulation package (VASP). The exchange correlation potential is treated by generalized gradient approximation. Primarily, we have calculated the equilibrium lattice constant ($a_0$) of BN and BBi. Our results for a_0 are 3.6264 $Å$ and 5.5243 $Å$ for BN and BBi, respectively. These results fairly coincide with theoretical and experimental studies. Then, we have calculated the optical parameters (dielectric functions, absorption and refractive index, reflectivity, energy loss function and conductivity) of BN and BBi which is directly related to the energy band structure of the material.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 2; 574-576
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Identification of Charge States of Indium Vacancies in InP
    Autorzy:
    LiMing, W.
    Fung, S.
    Beling, C. D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2008114.pdf
    Data publikacji:
    1999-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.15.Mb
    71.15.Pd
    71.55.Eq
    78.70.Bj
    Opis:
    The autocorrelation functions of positron-electron pairs in InP with indium vacancies in different charge states are calculated in this work. It is found that the autocorrelation function can be used to identify the charge states of vacancies in solids. In the case of perfect lattice the autocorrelation function oscillates on the lattice with the periodicity of the lattice and decays gradually up to about the third layer of the lattice points. In the case of neutral vacancies, the central peak expands significantly, but the nearest peak and dip are greatly reduced. In the case of negative charge states of vacancies, the central peak, however, contracts slightly compared to the case of the perfect lattice, and the nearest peak and dip and the next-nearest peak nearly disappear.
    Źródło:
    Acta Physica Polonica A; 1999, 95, 4; 612-614
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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