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Wyświetlanie 1-15 z 141
Tytuł:
Diluted Magnetic Semiconductor Investigations in Ukraine. Nature of Some Additional Lines in QW Optical Spectra
Autorzy:
Ryabchenko, S. M.
Abramishvili, V. G.
Komarov, A. V.
Semenov, Yu. G.
Kyrychenko, F. V.
Dubowski, J. J.
Powiązania:
https://bibliotekanauki.pl/articles/1968990.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
Opis:
The general review of the history and present-day situation of diluted magnetic semiconductor investigation in Ukraine is given by S. Ryabchenko. Some noteworthy results of diluted magnetic semiconductor investigation obtained in Ukraine are pointed out. The main features of the present day situation are mentioned also. As an example of last diluted magnetic semiconductor investigations, the new result obtained by Abramishvili, Komarov, Ryabchenko, Semenov, Kyrychenko and Dubowski for Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te/CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te quantum well structures grown by laser ablation method are presented. A weak additional line was observed in the reflectivity spectra of a 27 Å wide quantum well with x= 0.11 in the barrier. Such additional line has not been observed in spectra of similar molecular beam epitaxy grown structures. Based on the theoretical computations of the energies and the relation of intensities of the main and additional lines we conclude that this line might be associated with hh2 → e1 transitions, which ceases to be forbidden in the presence of technologically caused asymmetry of quantum well potential profile.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 165-176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Magnetic Polaron Formation on the Exciton Mobility Edge in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
Autorzy:
Mackh, G.
Yakovlev, D. R.
Ossau, W.
Waag, A.
Landwehr, G.
Powiązania:
https://bibliotekanauki.pl/articles/1932095.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
Opis:
We study the exciton localization in the semimagnetic semiconductor Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te by selective excitation of the exciton photoluminescence. We show that the energy position of the effective mobility edge for excitons is subject to the competition between nonmagnetic and magnetic localization due to the magnetic polaron formation. External magnetic fields affect this competition by suppressing the polaron formation, which shifts the mobility edge.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 265-268
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Detected SdH Oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te Modulation Doped Quantum Wells
Autorzy:
Shen, J. X.
Ossau, W.
Fischer, F.
Waag, A.
Landwehr, G.
Powiązania:
https://bibliotekanauki.pl/articles/1943817.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
Opis:
Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 1033-1037
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Strain Relaxation Induced Red Shift of Photoluminescence of CdZnSe/ZnSe Quantum Wires
Autorzy:
Straub, H.
Brunthaler, G.
Faschinger, W.
Bauer, G.
Vieu, C.
Powiązania:
https://bibliotekanauki.pl/articles/1952705.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
Opis:
Wire patterns (80-1000 nm) of molecular beam epitaxy grown Cd$\text{}_{0.2}$Zn$\text{}_{0.8}$Se/ZnSe quantum well were fabricated by a CH$\text{}_{4}$/H$\text{}_{2}$ reactive ion etching technique. Photoluminescence emission shows with decreasing lateral size a broadening of line shape and a spectral red shift. Calculations for the change of the band gap due to strain relaxation show that this shift of the photoluminescence emission for narrow Cd$\text{}_{0.2}$Zn$\text{}_{0.8}$Se/ZnSe structures (lattice mismatch of 1.34%) can be explained by a partial elastic strain relaxation of the biaxially compressively strained Cd$\text{}_{0.2}$Zn$\text{}_{0.8}$Se quantum well after the patterning process.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1085-1089
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Blue Photoluminescent Band in ZnS Crystals
Autorzy:
Liem, N. Q.
Quang, V. X.
Thanh, D. X.
Powiązania:
https://bibliotekanauki.pl/articles/1931824.pdf
Data publikacji:
1994-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Et
Opis:
The zinc sulphide crystals as-grown and heat treated in different atmospheres, have been studied by photoluminescence technique. A blue emission band (IB) peaking at 2.91 eV has been identified in the mentioned crystals. Parameters of the IB band such as peak energy, half width of spectrum, lifetime of photoluminescence as well as a superlinearly excitation intensity dependence of the luminescence have been determined. A model of the IB transition is proposed to explain the properties and features of IB luminescence.
Źródło:
Acta Physica Polonica A; 1994, 86, 6; 979-985
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Preheating Temperature on Microstructure and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Spin Coating Technique
Autorzy:
Ji, Qiang-min
Wang, Ya-li
Gao, Xiao-yong
Gao, Hui
Zhai, Yao-fei
Powiązania:
https://bibliotekanauki.pl/articles/1398971.pdf
Data publikacji:
2016-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.55.-m
Opis:
Highly-oriented ZnO thin films prepared by using low-cost technique such as sol-gel technique are of much importance to ZnO-based white light-emitting diodes. The chose of proper preheating temperature in sol-gel technique is still critical for highly-oriented ZnO thin film so far. The mechanisms for the preheating in the formation of ZnO thin film and for the reactions involved in the sol solution have not been clearly stated yet. Thus, in this work, the highly-oriented ZnO thin films were prepared on glass substrates by using sol-gel spin-coating technique. The sol solution was prepared by using the two-step method rather than usual one-step method, which facilitates the understanding of the mechanism for the reactions involved in the sol solution. The effect of the preheating temperature on the microstructure and the optical properties of the films were in particular investigated. The mechanisms for the preheating in the formation of the films and for the reactions involved in the sol solution prepared by the two-step method were also proposed in terms of the experimental results. The preheating not only enhances the volatilization of the solvent 2-methoxyethanol and the decomposition of the residual organic species, but also results into the formation of small number of ZnO particles. The preheating temperature of 300°C is most favorable for the highly-oriented ZnO thin film. Increasing the preheating temperature results into the blue shift of the absorption edges of the films. This can be explained by using the quantum-size effect. The photoluminescence spectra of the films show an UV emission at the near-band edge and a broad green-yellow emission at 470-620 nm. The former is closely related to the excitons, while the latter is to the intrinsic defect species in the film.
Źródło:
Acta Physica Polonica A; 2016, 129, 6; 1191-1196
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Identification of the IB Emission Band in Al-Doped ZnS Crystals
Autorzy:
Liem, N. Q.
Quang, V. X.
Thanh, D. X.
Powiązania:
https://bibliotekanauki.pl/articles/1945436.pdf
Data publikacji:
1996-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Et
Opis:
Time-resolved luminescence spectroscopy and thermal lensing techniques are applied to the study of deep centre photoluminescence and absorption in Al-doped ZnS crystals, which are as-grown or heat treated in different Zn rich or S rich atmospheres. A blue emission band peaking at 2.89 eV has been identified as IB band in all the mentioned crystals. Parameters of the IB band at 300 K, 77 K and 10 K such as peak energy, half width of spectrum, radiative lifetime have been determined. The IB band exhibits some special properties such as a shift neither with increasing delay time nor with excitation intensity nor with sample temperatures as well as a superlinearly excitation intensity dependence of the luminescence. An energy diagram and electronic transitions in the IB centre are presented to explain the experimental results.
Źródło:
Acta Physica Polonica A; 1996, 89, 5-6; 717-726
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Role of Ionic Processes in Degradation of Wide-Gap II-VI Semiconductor Materials
Autorzy:
Borkovskaya, L.V.
Dzhymaev, B.R.
Korsunskaya, N.E.
Markevich, I.V.
Singaevsky, A.F.
Sheinkman, M.K.
Powiązania:
https://bibliotekanauki.pl/articles/1858211.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Jv
78.55.Et
Opis:
A role of mobile defects in processes responsible for II-VI compound semiconductor characteristic instability is under consideration. These defects have been shown to be responsible for electron-enhanced reactions in these materials, in particular, shallow donor creation in CdS crystals. Accumulation of mobile defects near dislocations results in some specific effects: anisotropy of conductivity induced by electric field and distortion of edge emission spectrum shape. These effects side by side with electron-enhanced defect reactions have been found to influence considerably semiconductor device characteristics.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 255-259
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Signatures of p-Shell Electron g-Factor in s-Shell Emission of CdTe/ZnTe Quantum Dots
Autorzy:
Kazimierczuk, T.
Goryca, M.
Wojnar, P.
Golnik, A.
Nawrocki, M.
Kossacki, P.
Powiązania:
https://bibliotekanauki.pl/articles/1492860.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Hc
Opis:
We analyze the photoluminescence of excitonic complexes containing p-shell electron in the magnetic field in the Faraday configuration. We demonstrate that despite the p-shell electron is not involved directly in the recombination process, its g-factor influences the emission spectrum. We found that in the case of CdTe/ZnTe quantum dots the p-shell electron is significantly less affected by the magnetic field than s-shell electron in the same dot.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 874-876
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
XPS and Raman Characterizations of $Zn_{1-x}Cd_{x}O$ Films Grown at the Different Growth Conditions
Autorzy:
Shtepliuk, I.
Khyzhun, O.
Lashkarev, G.
Khomyak, V.
Lazorenko, V.
Powiązania:
https://bibliotekanauki.pl/articles/1403642.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Bf
Opis:
X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the $Zn_{1-x}Cd_{x}O$ semiconductor systems obtained at the different growth conditions. The effect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the $Zn_{1-x}Cd_{x}O$ films was investigated and discussed. Behavior of the X-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/$O_2$ gas ratio and dc power.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1034-1038
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changing the Properties of the CdTe/ZnTe Quantum Dots by in situ Annealing during the Growth
Autorzy:
Wojnar, P.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/2047681.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.De
78.55.Et
Opis:
We present an attempt to control the properties of CdTe/ZnTe self-assembled quantum dots during their formation in the process of molecular beam epitaxy. Namely, the structures were in situ annealed at various temperatures and annealing times after the formation of quantum dots, before the deposition of a capping layer. Depending on the annealing parameters, the dots exhibit different optical properties which were studied by means of spatially resolved photoluminescence. From the analysis of these results, the information about relative changes of the average size and sheet density of quantum dots was extracted.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 283-288
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Inter-Dot Coupling in a Self-Assembled Quantum Dot System
Autorzy:
Kazimierczuk, T.
Nowak, S.
Suffczyński, J.
Wojnar, P.
Golnik, A.
Gaj, J. A.
Kossacki, P.
Powiązania:
https://bibliotekanauki.pl/articles/2047689.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Et
Opis:
We present studies of resonant excitation of self-assembled CdTe/ZnTe quantum dots. Photoluminescence excitation measurements revealed existence of sharp resonances, common for photoluminescence lines attributed to different quantum dot charge states. We conclude from the ensemble of photoluminescence and photoluminescence excitation results that we observe energy transfer in coupled quantum dot pairs.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 321-324
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Configuration Mixing on Energies and Recombination Dynamics of Excitonic States in CdTe/ZnTe Quantum Dots
Autorzy:
Smoleński, T.
Kazimierczuk, T.
Goryca, M.
Kossacki, P.
Gaj, J. A.
Wojnar, P.
Fronc, K.
Korkusiński, M.
Hawrylak, P.
Powiązania:
https://bibliotekanauki.pl/articles/2047951.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Et
Opis:
We study experimentally and theoretically excitonic recombination processes in CdTe/ZnTe quantum dots. The single quantum dot photoluminescence spectrum was observed and emission lines from X, X$\text{}^{-}$, X$\text{}^{+}$ and 2X excitonic states were identified. Experimental results were analysed in the theoretical model based on the effective mass approximation. Numerical calculations of energy positions and recombination probabilities of X, X$\text{}^{-}$, X$\text{}^{+}$ and 2X were performed. Computed results reproduce correctly the order and relative positions of emission lines and ratios of radiative lifetimes.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 615-617
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot Photoluminescence in CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Holtz, P. O.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1968096.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
78.55.Et
Opis:
A step-like emission is observed for CdTe/CdMnTe structures δ-doped with In. The new photoluminescence cannot be explained by neither the Raman process nor by the "ordinary" hot photoluminescence. We propose that magnetic interactions are responsible for the new photoluminescence appearing due to a dramatic increase in a thermalization time of hot excitons.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 765-768
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Emission of Self-Assembled CdTe/ZnTe Quantum Dot Samples with Different Cap Thickness
Autorzy:
Nowak, S.
Powiązania:
https://bibliotekanauki.pl/articles/1791338.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Hc
Opis:
Photoluminescence measurements on CdTe/ZeTe self-assembled quantum dot samples with different cap thickness values (18-110nm) were performed at 1.8 K at varying excitation levels. The shape of macrophotoluminescence spectra did not altered notably with the excitation power. The spectra exhibited interference fringes related to the total barrier thickness. Simulation of the fringes confirmed the barrier thickness determined during the growth. The minimal amplitude of the fringes was observed for the cap thickness corresponding approximately to a quarter of the emission wavelength in the barrier material. Maximum emission intensity occurred for the largest thickness of the cap, i.e., 110 nm. We attribute this result to the influence of the surface recombination centers.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 890-892
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 141

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