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Wyszukujesz frazę "78.55.-m" wg kryterium: Temat


Tytuł:
Spectroscopic Investigation of Rare-Earth Doped Phosphate Glasses Containing Silver Nanoparticles
Autorzy:
Amjad, R.
Sahar, M.
Ghoshal, S.
Dousti, M.
Samavati, M.
Riaz, S.
Tahir, B.
Powiązania:
https://bibliotekanauki.pl/articles/1400152.pdf
Data publikacji:
2013-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Ly
78.55.-m
78.66.Jg
Opis:
Phosphate glasses having compositions $(59.5-x)P_2O_5-40MgO-xAgCl-0.5Er_2O_3$, where x=0, 1.5 mol.% is prepared using melt-quenching technique. Infrared, absorption and photoluminescence spectra of $Er^{3+}$-doped magnesium phosphate glasses have been reported. The amorphous nature of the host glass is confirmed by X-ray diffraction technique. Transmission electron microscope image confirms the existence of silver nanoparticles inside the glass matrix. The localized surface plasmon resonance band of silver is found to be located around ≈ 528 nm for the $Er^{3+}$ free sample. A frequency upconversion process from infrared to visible is observed on excitation with 797 nm radiation. Furthermore, an enhancement in the emission at 540 nm and 632 nm is found due to the local field effect of silver nanoparticles. Our findings may contribute towards the development of solid state laser and sensors.
Źródło:
Acta Physica Polonica A; 2013, 123, 4; 746-749
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
FIR Magnetooptical Measurements on MOCVD Grown InAs
Autorzy:
Andrearczyk, T.
Karpierz, K.
Bożek, R.
Stępniewski, R.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968009.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.-m
71.55.-i
72.40.+w
Opis:
In this paper we report results of magnetooptical measurements done on standard InAs MOCVD layers grown on GaAs. Extremely narrow lines (half-widths of the order of 20 mT) - narrower than found by other authors in high quality MBE InAs epilayers on GaAs - as well as the lines of typical half-widths have been found both in the photoconductivity spectra and in the transmission spectra. A detailed comparison with the theoretical dependence of shallow donor and Landau level energies on magnetic field leads to the conclusion that they originate from cyclotron resonance and impurity-shifted cyclotron resonance transitions in that material.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 699-703
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and Optical Properties of Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ Highly Mismatched Alloy
Autorzy:
Avdonin, A.
Van Khoi, Le.
Pacuski, W.
Domukhovski, V.
Gałązka, R. R.
Powiązania:
https://bibliotekanauki.pl/articles/2047712.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.66.Dk
61.72.Vv
78.55.-m
Opis:
The Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ alloy was prepared using a rapid crystallization technique. X-ray diffraction measurements were used to estimate the oxygen doping level. It is demonstrated that the oxygen solubility in Zn$\text{}_{1-x}$ Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ alloys greatly depends on the manganese concentration. No oxygen related effects were observed in the manganese free samples. The highest value of the oxygen molar fraction (y) achieved in the present study was 0.0023 in a sample having manganese fraction (x) of 0.056. The decrease in the alloy band gap was observed with increasing oxygen content. The oxygen-related trap level in Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ was found to be strongly shifted with respect to that in ZnTe$\text{}_{1-y}$O$\text{}_{y}$. The shift is assigned to a creation of complex (Mn$\text{}_{x}$O) traps.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 407-414
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Strong Photoluminescence Fluctuations in Laser-Thinned Few-Layer WS₂
Autorzy:
Bala, Ł.
Łacińska, E.
Nogajewski, K.
Molas, M.
Wysmołek, A.
Potemski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1398573.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
71.35.-y
78.55.-m
78.30.-j
Opis:
We present results of μ-Raman and μ-photoluminescence study of few-layer WS₂ flakes that have been locally thinned down by a focused laser beam. The Raman spectroscopy measurements prove that the investigated flake was locally thinned down to a monolayer. Interestingly, μ-photoluminescence experiments allowed us to observe huge intensity fluctuations at the boundary of laser-thinned region. Similar effects were found at the edges of a WS₂ bilayer flake, which has not been subjected to laser-thinning. The origin of the observed time evolution of the photoluminescence response is discussed in terms of potential fluctuations resulting from light-induced changes of the charge state of defects.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1176-1178
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Kinetics of YAG Crystals Activated with Ce, and Ce and Mg
Autorzy:
Barzowska, J.
Kubicki, A.
Grinberg, M.
Kaczmarek, S.
Łuczyński, Z.
Wojtowicz, A. J.
Koepke, Cz.
Powiązania:
https://bibliotekanauki.pl/articles/1995826.pdf
Data publikacji:
1999-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.47.+p
78.55.-m
Opis:
A basic spectroscopic measurements of luminescence, absorption, luminescence excitation spectra and emission kinetic measurements on YAG crystals activated with cerium and magnesium are presented. We report that the Ce$\text{}^{3+}$ luminescence decay constant, at 65 ns, is independent of Ce concentrations (from 0.05 to 0.2%) and that it does not change with the presence or absence of the Mg co-dopant. Nevertheless, we find that under pulsed laser excitation at 290 nm the rise time in Ce luminescence time profiles is effectively shorter in the Mg co-doped samples.
Źródło:
Acta Physica Polonica A; 1999, 95, 3; 395-402
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Level Scheme of Nd$\text{}^{3+}$ Ion in Rare Earth Oxyhalides, REOX (X = F, Cl, and Br)
Autorzy:
Beaury, L.
Hölsä, J.
Korventausta, J.
Krupa, J.-C.
Lamminmäki, R.-J.
Porcher, P.
Rahiala, H.
Säilynoja, E.
Powiązania:
https://bibliotekanauki.pl/articles/1952823.pdf
Data publikacji:
1996-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
71.70.Ch
78.40.-q
78.55.-m
Opis:
The energy level schemes of the neodymium oxyhalides (NdOX, X = F, Cl, and Br) were studied and simulated with a phenomenological model accounting simultaneously for both the free ion interactions and the crystal field effect. The former included the electrostatic and interconfigurational interactions as well as the spin-orbit coupling. The simulations were carried out by using the data from the optical absorption and luminescence as well as the inelastic neutron scattering measured at low temperatures between 2.5 and 77 K. The values of the Slater integral F$\text{}^{2}$ describing the electrostatic interactions decrease while F$\text{}^{4}$ and F$\text{}^{6}$ increase as a function of the ionic radius of the halide anion. The strength of the spin-orbit coupling is quite the same in all three matrices. The crystal field effect - measured as the crystal field strength parameter S - is almost twice as strong in the hexagonal NdOF matrix (650 cm$\text{}^{-1}$) than in the tetragonal NdOCI or NdOBr (367 and 378 cm$\text{}^{-1}$, respectively). Similar evolution was obtained for the short-and mid-range crystal field strengths related to the spatial extension of the interaction.
Źródło:
Acta Physica Polonica A; 1996, 90, 6; 1203-1213
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural, morphological and optical study of bismuth and Zinc Co-doped yttrium oxide prepared by solvothermal and wet chemical method
Autorzy:
Bhavani, G.
Ganesan, S.
Powiązania:
https://bibliotekanauki.pl/articles/1058867.pdf
Data publikacji:
2016-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
61.05.C-
61.72.sd
Opis:
Yttrium oxide (Y₂O₃) is the most familiar yttrium compound, which is popularly known as host for ion doping of other rare earth elements. Bismuth ion (Bi³⁺) is well known as an activator and sensitizer in several particular phosphors. Zinc oxide (ZnO) nanomaterial, having a wide band gap, is one of the promising candidates for general illumination applications due to its high optical transparency and color tenability bismuth (Bi) and zinc (Zn) co-doped Y₂O₃ samples are synthesized by simple precipitation techniques like solvothermal and wet chemical methods. The prepared samples were characterized using X-ray diffraction, scanning electron microscope, energy dispersive X-ray spectra, ultraviolet-visible absorbance spectroscopy and photoluminescence spectrophotometry. Ultraviolet-visible absorption studies showed absorption only around 340 nm whereas photoluminescence shows peaks around 500 nm, 680 nm, and 1020 nm for Bi and Zn co-doped Y₂O₃. The photoluminescence spectrum shows emission in blue region (500 nm) due to Zn dopant and red and near infrared region (680 and 1020 nm) due to Bi dopant. This is a new material which can effectively work as an efficient and cheap red phosphor.
Źródło:
Acta Physica Polonica A; 2016, 130, 6; 1373-1379
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Electron Microscopy and Luminescence Studies of Quantum Well Structures Resulting from Stacking Fault Formation in 4H-SiC Layers
Autorzy:
Borysiuk, J.
Wysmołek, A.
Bożek, R.
Strupiński, W.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811916.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Lp
78.55.-m
61.72.Nn
68.65.Fg
61.72.up
Opis:
Transmission electron microscopy and photoluminescence studies of quantum well structures related to stacking faults formation in 4H-SiC homoepitaxial layers are reported. The investigated 4H-SiC layers were deposited on 8° misoriented Si-terminated (0001) surface of high quality 4H-SiC substrate. It is found that the planar defects created by direct continuation from the SiC substrates are cubic 3C-SiC stacking faults. These defects are optically active, giving rise to characteristic luminescence band in the spectral range around 2.9 eV, which consist of several emission lines. The observed energy and intensity pattern of this emission is discussed of in terms of single, double and multiple quantum wells formed from neighboring 3C-SiC SF layers embedded in 4H-SiC material.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1067-1072
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy
Autorzy:
Böttcher, T.
Einfeldt, S.
Figge, S.
Kirchner, V.
Hommel, D.
Selke, H.
Ryder, P. L.
Bertram, F.
Riemann, T.
Christen, J.
Lunz, U.
Becker, C. R.
Powiązania:
https://bibliotekanauki.pl/articles/1969025.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Dv
68.65.+g
78.20.-e
78.55.-m
78.55.Cr
Opis:
The luminescence of In$\text{}_{x}$Ga$\text{}_{1-x}$N is studied for thick epitaxial layers and quantum wells. Using spatially resolved cathodoluminescence spectroscopy the commonly observed broad integral photoluminescence spectra were found to result from spectral and lateral inhomogeneous emission across the samples. Moreover, the integral photoluminescence and absorption spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 260-264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
Autorzy:
Bożek, R.
Korona, K. P.
Nowak, G.
Wasik, D.
Słupiński, T.
Kaczor, P.
Powiązania:
https://bibliotekanauki.pl/articles/1929707.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.55.-m
78.20.Jq
Opis:
GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p$\text{}_{CO}$/p$\text{}_{tot}$ = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10$\text{}^{7}$ Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 669-672
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impurity Wave Function and Alloy Broadening of Impurity-Related Luminescence
Autorzy:
Buczko, R.
Langer, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1929682.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
73.40.Kp
78.55.-m
Opis:
By performing state-of-art computations of the acceptor wave functions in GaAs we show that the linewidth of the conduction band to acceptor luminescence increases more than quadratically with the increase in the binding energy. This proves that study of the fluctuation broadening of the impurity-related emission in semiconductor alloys may provide a critical test for theories claiming realistic impurity wave function computation. The theoretical results are compared with the experimental data for high purity p-type AlGaAs alloys.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 591-594
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Cavity Enhanced Photonic Devices
Autorzy:
Bugajski, M.
Muszalski, J.
Ochalski, T.
Kątcki, J.
Mroziewicz, B.
Powiązania:
https://bibliotekanauki.pl/articles/2030303.pdf
Data publikacji:
2002-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.66.Fd
78.55.-m
78.67.De
78.45.+h
78.47.+p
Opis:
In the present paper we review our recent works on technology, basic physics, and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In$\text{}_{x}$Ga$\text{}_{1-x}$As/GaAs planar microcavities with distributed Bragg reflectors. In general, observed trends are in agreement with theoretical predictions. We also demonstrate the operation of resonant-cavity light emitting diodes and optically pumped vertical cavity light emitting diodes developed recently at the Department of Physics and Technology of Low-Dimensional Structures of the Institute of Electron Technology.
Źródło:
Acta Physica Polonica A; 2002, 101, 1; 105-118
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Topographical, Magnetic and Optical Studies of (II,Mn)VI Quantum Structures Grown on (Ga,Mn)As
Autorzy:
Butkutė, R.
Aleszkiewicz, M.
Janik, E.
Cywiński, G.
Wojnar, P.
Däweritz, L.
Primus, J.
De Boeck, J.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/2036853.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
07.79.Pk
78.55.-m
Opis:
We report on an overgrowth of quantum structures consisting of diluted magnetic semiconductor CdMnTe quantum wells with non-magnetic barriers made of CdMgTe or ZnTe on ferromagnetic MnAs and GaMnAs films by molecular beam epitaxy. Atomic force microscopy images of the quantum structures grown on MnAs demonstrated the existence of two types of regions on the surface: protruded islands with micrometric sizes, surrounded by areas of small-scale roughness. Magnetic force microscopy study of these samples revealed a magnetic domain structure only on the above mentioned islands. The (II,Mn)VI quantum wells grown on GaMnAs films exhibited relatively smooth surface, but no magnetic force microscopy signal was measurable either before or after magnetizing the sample. In the luminescence spectra of all our quantum structures the emission attributed to CdMnTe quantum wells was observed. The influence of magnetization on the luminescence line position was investigated.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 649-657
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of the Excitonic Photoluminescence in $n^{+}$/i-GaAs by Controlling the Thickness and Impurity Concentration of the $n^{+}$ Layer
Autorzy:
Čerškus, A.
Nargelienė, V.
Kundrotas, J.
Sužiedėlis, A.
Ašmontas, S.
Gradauskas, J.
Johannessen, A.
Johannessen, E.
Powiązania:
https://bibliotekanauki.pl/articles/1505489.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
71.35.-y
71.55.Eq
Opis:
This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, $N_{Si} = 10^{17} cm^{-3}$ and $N_{Si} = 10^{18} cm^{-3}$, was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the $n^{+}$/i-GaAs homojunction are discussed.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 154-157
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Control of Valence-Band Hole Spin by Electric Field
Autorzy:
Dargys, A.
Powiązania:
https://bibliotekanauki.pl/articles/2037172.pdf
Data publikacji:
2004-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
73.40.Gk
78.55.-m
79.90.+b
Opis:
Coherent properties of the hole spin in an electric field are investigated. The tunneling between valence bands is used to control the transitions between the spin states. Extensive numerical studies using the time-dependent Schrödinger equation for valence band are presented to demonstrate the characteristic properties of the hole spin dynamics in dc, harmonic, as well as optimized electric fields for real valence bands of silicon. The paper also shows how one can connect the average hole spin with the initial hole wave function in the time-dependent Schrödinger equation.
Źródło:
Acta Physica Polonica A; 2004, 105, 3; 295-306
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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