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    Wyświetlanie 1-8 z 8
    Tytuł:
    Vibrational Modes in Si$\text{}_{x}$Ge$\text{}_{1-x}$ Alloys: Temperature and Compositional Dependence
    Autorzy:
    Lorenc, M.
    Humlíček, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968341.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Am
    63.20.Dj
    Opis:
    We report infrared absorption spectra of crystalline Si$\text{}_{x}$Ge$\text{}_{1-x}$ alloys with silicon content 0 ≤ x ≤ 1 at room and liquid nitrogen temperature. We covered the spectral range from 375 to 1200 cm$\text{}^{-1}$ that includes the "Si-Ge" and "Si-Si" single-phonon transitions, the continuum of two-phonon processes, and the localized mode of interstitial oxygen. We study the change of vibrational structure and correlation between reference (pure Si and Ge) and alloy spectra. We observed shifts to lower wave numbers by about 1 cm$\text{}^{-1}$ of the two-phonon absorption bands per 1% increase in germanium concentration. Pronounced changes of the vibrational spectra upon lowering the temperature were detected.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 899-902
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Localized Vibrational Modes of Interstitial Oxygen in Si$\text{}_{x}$Ge$\text{}_{1-x}$ Alloys
    Autorzy:
    Lorenc, M.
    Humlíček, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991997.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Am
    63.20.Pw
    Opis:
    We study infrared-active vibrations of interstitial oxygen in Czochralski-grown samples of Si$\text{}_{x}$Ge$\text{}_{1-x}$ alloys with the silicon content from 0 to 1 between room and liquid nitrogen temperature. The measurements were performed on a large series of samples including single crystals of Si and Si-rich alloys, and polycrystalline samples of alloys with a higher Ge content. We focus on quantitative data on the compositional and temperature evolution of the strongest absorption band above 1100 cm$\text{}^{-1}$, related to the asymmetric stretching of the Si$\text{}_{2}$O pseudomolecule. We have also observed a pronounced Fano-like resonance centered at 520 cm$\text{}^{-1}$.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 436-440
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Micro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surface
    Autorzy:
    Frantskevich, N.
    Fedotov, A.
    Frantskevich, A.
    Mazanik, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1366278.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Am
    61.72.uf
    Opis:
    The goal of this work is the micro-Raman study of molecular hydrogen localized in cone-shaped defects, which are formed on the surface of previously helium implanted and annealed Czochralski Si wafers as a result of hydrogen plasma treatment. The line at ≈ 4158 $cm^{-1}$ corresponding to molecular hydrogen is observed in the Raman spectra when the laser beam is focused both on cone-shaped defects or defect-free regions of the surface. The laser irradiation of cone-shaped defects during micro-Raman experiments leads to intensity increase of this line when the irradiation time is increasing, with subsequent appearance of lines at ≈ 3621 and ≈ 3698 $cm^{-1}$ and simultaneous disappearance of 4158 $cm^{-1}$ line. No such effect was observed when the laser beam was focused on defect-free regions. The experiments have shown that heat treatment of the samples studied causes the appearance in the Raman spectra of lines at ≈ 3468, ≈ 3621, and ≈ 3812 $cm^{-1}$, which can be associated with molecular hydrogen.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1332-1334
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Raman Spectra of Bismuth Oxyhalide Single Crystals
    Autorzy:
    Bunda, S.
    Bunda, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1368693.pdf
    Data publikacji:
    2014-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.22.-m
    78.30.Am
    78.30.Fs
    Opis:
    Oxyhalogenides of bismuth BiOX (X=Cl, Br and I) are very interesting materials which find various applications as X-ray luminescent screens, anti-Stokes (frequency upshift) converters, luminophors, and photoconducting analyzers of linear polarized radiation. Since each primitive cell consist of six monoatomic sites, the structure of the reduced representation of the 15 normal modes of vibration is: Γ= $2A_{1g}(Ra.)+B_{1g}(Ra.)+ 3E_{g}(Ra.)+ 2A_{2u}(i.r.)+ 2E_{u}(i.r.)$, in which the vibrations of $A_{1g}$, $B_{1g}$ and $E_{g}$ species are active in the Raman spectrum and those of $A_{2u}$ and $E_{u}$ species are active in the infrared (i.r.) spectrum. The Raman active modes are observed in frequency range 55 - 225 $cm^{-1}$, 50 - 185 $cm^{-1 }$, and 45 - 175 $cm^{-1}$ for the BiOCl, BiOBr and BiOI single crystals respectively.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 1; 272-273
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and Optoelectronic Properties of In-Zn-S sprayed Layers
    Autorzy:
    Lazzez, S.
    Boubaker, K.
    Ben Nasrallah, T.
    Amlouk, M.
    Belgacem, S.
    Mnari, M.
    Chtourou, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812052.pdf
    Data publikacji:
    2008-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.Dp
    78.66.Li
    78.30.Am
    Opis:
    In this work, In-Zn-S thin layers were prepared using the spray pyrolysis technique on glass substrates at 320°C. The molar ratio between zinc and indium $x=[Zn^{2+}]//[In^{3+}]$ was varied in 0-0.4 domain whereas $[S^{2-}]//[In^{3+}]$ one was taken constant equal to 2. The atomic composition was carried out with the atomic absorption. The structural study of all layers via X-ray diffraction and atomic force microscopy shows that the layer, obtained using x=0 is formed by binary material $In_2S_3$ with a principal orientation along (400). When the composition increases the same study depicts the presence of other materials such as ZnO, ZnS, and $ZnIn_2S_4$. On the contrary, for x=0.4, the film is mainly formed by the ternary compound $ZnIn_2S_4$ which crystallizes in cubic phase. Moreover, the optical analysis via the transmittance, reflectance as well as the photocurrent reveals that the band gap energy $E_g$ increases slightly as a function of the x composition ($E_g$ varies from 2.6 to 2.9 eV).
    Źródło:
    Acta Physica Polonica A; 2008, 114, 4; 869-880
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process
    Autorzy:
    Tejero, A.
    Tupin, E.
    González, M.
    Martínez, O.
    Jiménez, J.
    Belouet, C.
    Baillis, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198416.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Am
    61.72.Ff
    88.40.jj
    Opis:
    In the silicon ribbon on a sacrificial template process silicon is deposited on both sides of a carbon ribbon, thus forming a Si/carbon/Si trilayer. The fast cooling of the ribbon in large temperature gradients generates stresses that are detrimental to both the electrical performance and the mechanical behaviour of the wafers. The assessment of the stresses is crucial for the setting-up of thermal treatments allowing for the stress relaxation of the wafers, prior to the cell fabrication. We present an analysis of the stress in the as-grown trilayer by a simulation of the thermomechanical behaviour of the cooling ribbon. Experimental measurements of the stress in as-grown and annealed trilayers are also presented. The results permit to establish the conditions for optimized growth and annealing.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1006-1009
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Residual Strain and Electrical Activity of Defects in Multicrystalline Silicon Solar Cells
    Autorzy:
    Martínez, O.
    Mass, J.
    Tejero, A.
    Moralejo, B.
    Hortelano, V.
    González, M.
    Jiménez, J.
    Parra, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198419.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Am
    61.72.Ff
    88.40.jj
    Opis:
    The growth process by casting methods of multi-crystalline Si results in a crystalline material with, among other defects, a high density of dislocations and grain boundaries. Impurity incorporation and their gathering around grain boundaries and dislocations seem to be the main factor determining the electrical activity of those defects, which limit the minority carrier lifetime. In this work, we analyze multi-crystalline Si samples by combining etching processes to reveal the defects, Raman spectroscopy for strain measurements, and light beam induced current measurements for the localization of electrically active defects. In particular, we have explored the etching routes capable to reveal the main defects (grain boundaries and dislocation lines), while their electrical activity is studied by the light beam induced current technique. We further analyze the strain levels around these defects by Raman micro-spectroscopy, aiming to obtain a more general picture of the correlation between residual stress and electrical activity of the extended defects. The higher stress levels are observed around intra-grain defects associated with dislocation lines, rather than around the grain boundaries. On the other hand, the intra-grain defects are also observed to give dark light beam induced current contrast associated with a higher electrical activity of these defects as compared to the grain boundaries.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1013-1016
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing
    Autorzy:
    Prucnal, S.
    Shumann, T.
    Skorupa, W.
    Abendroth, B.
    Krockert, K.
    Möller, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503796.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jj
    78.55.-m
    78.30.Am
    78.55.Ap
    Opis:
    Phosphorus ion implantation was used for the emitter formation in mono- and multicrystalline silicon solar cells. After ion implantation the silicon is strongly disordered or amorphous within the ion range. Therefore subsequent annealing is required to remove the implantation damage and activate the doping element. Flash-lamp annealing offers here an alternative route for the emitter formation at overall low thermal budget. During flash-lamp annealing, only the wafer surface is heated homogeneously to very high temperatures at ms time scales, resulting in annealing of the implantation damage and electrical activation of phosphorus. However, variation of the pulse time also allows to modify the degree of annealing of the bulk region to some extent as well, which can have an influence on the gettering behaviour of metallic bulk impurities. The μ-Raman spectroscopy showed that the silicon surface is amorphous after ion implantation. It could be demonstrated that flash-lamp annealing at 800°C for 20 ms even without preheating is sufficient to recrystallize implanted silicon. The highest carrier concentration and efficiency as well as the lowest resistivity were obtained after annealing at 1200°C for 20 ms both for mono- and multicrystalline silicon wafers. Photoluminescence results point towards P-cluster formation at high annealing temperatures which affects metal impurity gettering within the emitter.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 30-34
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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