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Wyszukujesz frazę "77.90.+k" wg kryterium: Temat


Wyświetlanie 1-4 z 4
Tytuł:
Design and Experiment on the Compact, Portable Pulse Forming Line
Autorzy:
Xia, L.
Shi, J.
Chen, D.
Zhang, H.
Zhang, L.
Deng, J.
Powiązania:
https://bibliotekanauki.pl/articles/1807991.pdf
Data publikacji:
2009-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.70.+p
77.90.+k
Opis:
Some research has been done on making the compact, portable pulse forming line. A kind of ceramic and a kind of newly developed composite polymer are both used as the dielectric of the planar pulse forming line. The ceramic's dielectric constant ranges from 200 to 600 and the composite polymer's dielectric constant ranges from 100 to 200. It is easier to manufacture the large composite polymer dielectric bulks than to manufacture the ceramic bulks. In the experiments, using the large composite polymer bulk as the dielectric, the planar Blumlein line generated the pulse up to 100 kV with duration 90 ns. Using the ceramic bulk as the dielectric, the planar line generated the voltage pulse up to 60 kV with duration 92 ns.
Źródło:
Acta Physica Polonica A; 2009, 115, 6; 1192-1193
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Atomic Force Microscopy Study of a Voltage Effect on CdZnTe Crystal Dimensions
Autorzy:
Aleszkiewicz, P.
Wojciechowski, T.
Fronc, K.
Kolkovsky, V.
Janik, E.
Jakieła, R.
Mycielski, A.
Karczewski, G.
Aleszkiewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811911.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
73.61.Ga
77.90.+k
Opis:
In this work we studied the influence of an external electric voltage on spatial dimensions of CdZnTe mixed crystals. In order to get an absolute magnitude of the sample thickness and to gain insight to the changes of lateral dimension, in quasi-bulk 3 μm thick CdZnTe layers grown by molecular beam epitaxy square craters were formed by ion sputtering in a secondary ion mass spectrometer. The vertical and lateral dimensions of the craters were studied by the atomic force microscopy. The atomic force microscopy measurement revealed that the thickness of the CdZnTe layer increases in a result of applying a single voltage pulse to the sample surface and decreases reversibly after applying reversely biased voltage. The voltage triggering was high enough to switch the conductivity state of the sample i.e., the effect of thickness change is accompanied by the effect of conductivity switching. The thickness change is significant, reaching several percents of the entire layer thickness.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1041-1047
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Internal Friction and the Relaxation Time Spectrum of Ferroelectric Ceramic PZT Type
Autorzy:
Bartkowska, J.
Ilczuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811522.pdf
Data publikacji:
2008-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.84.Dy
72.15.Lh
77.90.+k
62.40.+i
Opis:
The fractional Zener model with two spring-pots is proposed to description of relaxation time spectrum of ferroelectric ceramic material. This model is based on fractional calculus. The influence of values of a and b parameters on the shape of the relaxation time spectrum was investigated.
Źródło:
Acta Physica Polonica A; 2008, 114, 6A; A-7-A-13
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Study of $GdMnO_{3}$ Multiferroic Thin Films
Autorzy:
Andreev, N.
Abramov, N.
Chichkov, V.
Pestun, A.
Sviridova, T.
Mukovskii, Ya.
Powiązania:
https://bibliotekanauki.pl/articles/1550592.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.47.Lx
75.50.Ee
75.70.Ak
77.90.+k
Opis:
Laboratory technology of $GdMnO_{3}$ thin film fabrication was elaborated. Samples of $GdMnO_{3}$ were fabricated at $NdGaO_{3}$ substrate by magnetron sputtering using off-axis scheme. Structure and phase content of the samples obtained were studied as well as their magnetic properties. The surface topography of the films was observed by atomic force microscopy. Presence of peculiarities at the temperature dependences of magnetic susceptibility points at magnetic phase transitions in $GdMnO_{3}$, which were found before in the single crystals. This fact jointly with X-ray data shows that at definite fabrication regimes one can obtain the multiferroics thin film $GdMnO_{3}$ modification, and the film quality permits to carry out accurate study of the compound in question.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 218-220
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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