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Wyszukujesz frazę "76.30.Mi" wg kryterium: Temat


Wyświetlanie 1-6 z 6
Tytuł:
Electron Spin Echo Envelope Modulation Analysis of SeO¯$\text{}_{3}$ Radical in (NH$\text{}_{4}$)$\text{}_{3}$H(SeO$\text{}_{4}$)$\text{}_{2}$ Single Crystal
Autorzy:
Tritt-Goc, J.
Goslar, J.
Hilczer, W.
Hoffmann, S.
Augustyniak, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/1929835.pdf
Data publikacji:
1993-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.60.Lz
76.30.Mi
Opis:
A detailed computer analysis of the electron spin echo envelope modulations of SeO$\text{}_{3}$ radical in a suitable orientation of (NH$\text{}_{4}$)$\text{}_{3}$H(SeO$\text{}_{4}$)$\text{}_{2}$ single crystal is presented. It was found that the modulations are due to a weak dipolar coupling with nitrogens and protons of the only two neighbouring NH$\text{}_{4}$ groups among the five NH$\text{}_{4}$ groups surrounding SeO¯$\text{}_{3}$ center. Isotropic dipolar coupling constant is 1.7 MHz for nitrogens and 0.9 MHz for protons. It was shown that thermal reorientations of NH$\text{}_{4}$ groups observed by NMR have a negligible effect on the electron spin echo envelope modulation pattern but can be responsible for the same value of a$\text{}^{H}$$\text{}_{iso}$ for all protons in a NH$\text{}_{4}$ group. A good fit obtained between experimental spectra and theoretical calculations assuming nondisturbed crystal geometry indicates a small damage of the crystal by X-rays during the radical center formation.
Źródło:
Acta Physica Polonica A; 1993, 84, 6; 1131-1141
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP
Autorzy:
Jasiński, J.
Palczewska, M.
Korona, K.
Kamińska, M.
Bourret, E. D.
Elliot, G.
Powiązania:
https://bibliotekanauki.pl/articles/1923836.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
76.30.Mi
Opis:
Semi-insulating, p- and n-type liquid encapsulated Czochralski grown phosphorus rich GaP crystals before and alter neutron irradiation were studied. EPR measurements proved that the phosphorus antisite defect P$\text{}_{Ga}$ introduced by neutron irradiation was exactly the same as in as grown materials, i.e. surrounded by four substitutional phosphorus atoms. In neutron irradiated crystals EPR showed also a signal, similar to the one found in plastically deformed GaAs and GaP. The concentrations of P$\text{}_{Ga}$ and of the other defect were estimated to be of the same order of magnitude. Two absorption bands at 0.81 and 1.12 eV were found for irradiated materials. The temperature dependence of resistivity indicated hopping as the mechanism of conduction in samples irradiated with doses higher than 4 × 10$\text{}^{16}$ cm$\text{}^{-2}$.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 829-832
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Electrical Studies of FR1 and FR2 Defects in GaAs
Autorzy:
Dwiliński, R.
Palczewska, M.
Kaczor, P.
Korona, K.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920972.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.50.Ge
76.30.Mi
Opis:
The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies of acceptor defects in bulk GaAs were performed. For the first time, parallel EPR and optical absorption experiments allowed to find the absorption spectrum due to the photoionization of FR1 defect with the threshold at 0.19 eV. Photoluminescence studies showed two families of bands in the energy range of about 1.25 to 1.35 eV. We tentatively ascribed them to FR1 and FR2 complexes with shallow donors. Thermally stimulated current measurements showed two peaks at 90 K and 110 K assigned to FR1 and FR2 respectively.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 613-616
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Antisites Defects in GaP
Autorzy:
Jasiński, J.
Kamińska, M.
Palczewska, M.
Jurkiewicz-Wagner, P.
Powiązania:
https://bibliotekanauki.pl/articles/1929675.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
76.30.Mi
Opis:
ESR, optical, and transport measurements were done on neutron-irradiated GaP crystals subjected to thermal annealing. The behavior of two dominant paramagnetic defects: phosphorus antisite PP4 and WA1 [1] was followed. ESR signal similar to WA1 was earlier attributed to the defect related with gallium antisite [2]. Our thermal annealing experiments supported such attribution. Apart from that, the obtained results indicated that two dominant absorption bands in neutron-irradiated GaP with maxima at 0.79 and 1.13 eV [1] were not connected with PP$\text{}_{4}$ or WA1 defects. However, one of these paramagnetic defects (or two of them) were responsible for hopping transport in n-irradiated GaP crystals.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 579-582
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intrinsic Luminescence of the Undoped Glasses of (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) System
Autorzy:
Padlyak, B. V.
Bordun, O. M.
Buchynskii, P. P.
Powiązania:
https://bibliotekanauki.pl/articles/2010938.pdf
Data publikacji:
1999-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.70.Ce
78.60.-b
76.30.Mi
Opis:
For the first time the intrinsic luminescence in the undoped (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) glasses with different composition has been found and investigated in the 80÷300 K temperature range. The new glasses of high chemical purity and optical quality with stoichiometric composition similar to that in calcium-gallium- germanium garnet (Ca$\text{}_{3}$Ga$\text{}_{2}$Ge$\text{}_{3}$O$\text{}_{12}$), trigonal Ca-gallogermanate (Ca$\text{}_{3}$Ga$\text{}_{2}$Ge$\text{}_{4}$O$\text{}_{14}$), and Ca$\text{}_{3}$Ga$\text{}_{2}$O$\text{}_{6}$ crystals were obtained by the high-temperature synthesis method. The luminescence and photoexcitation spectra analysis, supported by EPR spectroscopy data, yields the following results: (i) the UV-excited non-elementary broad emission band with maxima at roughly 500 nm and 420 nm in the (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) glasses is due to recombination of ensemble of the transient hole O$\text{}^{-}$ centres; (ii) the emission bands with maxima at nearly 380 and 710 nm, which were distinctly revealed in glasses with the Ca$\text{}_{3}$Ga$\text{}_{2}$Ge$\text{}_{4}$O$\text{}_{14}$ and Ca$\text{}_{3}$Ga$\text{}_{2}$O$\text{}_{6}$ compositions, are assigned to the luminescence of UV-induced electron centres of two different types. Possible models of the luminescence centres in (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) glass network are discussed.
Źródło:
Acta Physica Polonica A; 1999, 95, 6; 921-929
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photo-ESR and Absorption Studies of Antisite Defects in GaP
Autorzy:
Palczewska, M.
Jasiński, J.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1876158.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
76.30.Mi
Opis:
Photo-ESR and optical absorption measurements were done on annealed neutron irradiated GaP crystals. The position of paramagnetic gallium anti-site level in GaP energy gap has been determined. Additionally, the position of paramagnetic phosphorus antisite level, earlier determined in the paper of Kruger and Alexander, has been confirmed. Moreover, unusual in ESR experiments temperature dependence of phosphorus antisite amplitude in neutron irradiated GaP crystals has been explained.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 461-464
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-6 z 6

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