Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "75.47.Pq" wg kryterium: Temat


Wyświetlanie 1-4 z 4
Tytuł:
Magnetic Structures of Ho_5Rh_4Ge_{10}
Autorzy:
Szytuła, A.
Penc, B.
Hofmann, M.
Sikora, W.
Powiązania:
https://bibliotekanauki.pl/articles/1399030.pdf
Data publikacji:
2013-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.25.-j
75.47.Pq
75.50.Ee
Opis:
A powder diffraction measurement of $Ho_5Rh_4Ge_{10}$ is reported. This compound crystallizes in the tetragonal $Sc_5Co_4Si_{10}$-type structure (space group P4/mbm) in which the Ho atoms occupy three different sites. The neutron diffraction measurements indicate antiferromagnetic order with the Néel temperature $T_{N}$=7 K. Below $T_{N}$ an additional phase transition at 4.5 K connected with the change of the magnetic structure is observed. The Ho moments in 4(h) site form collinear order up to T_{N} while moments at 2(a) site form sine modulated structure. Determined experimentally magnetic structures are compared to the results of symmetry analysis.
Źródło:
Acta Physica Polonica A; 2013, 124, 6; 1002-1004
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Magnetic Field on Detection Properties of Planar Microwave Diodes
Autorzy:
Sužiedėlis, A.
Ašmontas, S.
Požela, J.
Gradauskas, J.
Nargelienė, V.
Paškevič, Č.
Derkach, V.
Golovashchenko, R.
Goroshko, E.
Korzh, V.
Anbinderis, T.
Powiązania:
https://bibliotekanauki.pl/articles/1506099.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.57.Kp
78.70.Gq
75.47.Pq
73.40.Kp
73.40.-c
75.70.-i
Opis:
The results of experimental investigation of detection properties of the planar microwave diodes of various configuration on DC magnetic field are presented in this paper. The detection of microwave radiation was measured at 51 GHz, 72 GHz and 144 GHz frequencies. The magnetic field was applied in plane and perpendicularly to the plane of the diodes. The experiment was performed at room temperature. Dependence of the detected voltage of the diodes on the magnetic field had asymmetric character with respect to the polarity of the magnetic field. This fact allowed us to suspect the magnetic rectification influencing the detected voltage. Therefore, average value of the detected voltage with respect to the polarity of the applied magnetic field gives its dependence on the applied magnetic field.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 218-221
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetotransport Properties of $CaTi_xRu_{1-x}O_3$ (x=0, 0.07)
Autorzy:
Zorkovská, A.
Baran, A.
Feher, A.
Šebek, J.
Šantavá, E.
Bradarić, I.
Powiązania:
https://bibliotekanauki.pl/articles/1813683.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.Pq
73.43.Qt
75.47.-m
Opis:
Electrical resistance, transversal magnetoresistance and the Hall effect were studied on polycrystalline $CaTi_xRu_{1-x}O_3$ (x=0, 0.07) samples using a conventional Quantum Design PPMS-9 equipment in the temperature range 2-300 K and magnetic field up to 9 T. Substantial differences were found between the two samples: (i) opposite to the metallic character of $CaRuO_3$, the substituted sample has insulating-like electrical resistance;(ii) the magnetoresistance of the substituted sample changes the sign from negative to positive values with increasing temperature. The magnetoresistance of $CaRuO_3$ is negative, the sign reversal is induced by magnetic field and only at temperatures below 15 K, such a behaviour is predicted for clustered systems;(iii) the Hall voltage in pure $CaRuO_3$ also changes sign from negative to positive values above 35 K. This temperature coincides with the observed magnetic transition temperature, indicating that the magnetic state and the carrier character interrelate.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 351-354
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Positron Annihilation in $MnFe_2O_4$/MCM-41 Nanocomposite
Autorzy:
Wiertel, M.
Surowiec, Z.
Gac, W.
Budzyński, M.
Powiązania:
https://bibliotekanauki.pl/articles/1339369.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
34.80.Lx
78.67.Bf
62.23.Pq
68.43.-h
75.50.Gg
78.47.D-
Opis:
In the paper results of studies of $MnFe_2O_4$/MCM-41 nanocomposites have been presented. The influence of manganese ferrite loading on changes of porous properties of mesoporous MCM-41 structure was studied by means of $N_2$ sorption/desorption method and positron annihilation lifetime spectroscopy. Disappearance of the longest-lived ortho-positronium component ($τ_5$) of pure MCM-41 mesoporous material in the positron annihilation lifetime spectra of $MnFe_2O_4$/MCM-41 measured in vacuum is a result of either o-Ps quenching or the Ps inhibition mechanism. Filling of pores in the studied nanocomposites by air at ambient pressure causes partial reappearance of the ($τ_5$) component except for the sample with maximum ferrite content. Both the ($τ_5$) component lifetime and intensity are suppressed together with increasing $MnFe_2O_4$ content by chemical quenching and inhibition of Ps formation occur. Observed anti-quenching effect of air is a result of two processes: neutralization of some surface active centres acting as inhibitors and considerably weaker paramagnetic quenching by $O_2$ molecules.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 793-797
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies