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Wyszukujesz frazę "73.61.Tm" wg kryterium: Temat


Wyświetlanie 1-3 z 3
Tytuł:
Magnetic Properties of Iron-Based Amorphous and Nanocrystalline Fe-Zr-X-B (X: Cu, Al) Alloy Films
Autorzy:
Gościańska, I.
Toliński, T.
Ratajczak, H.
Sovák, P.
Dlugoš, R.
Konč, M.
Powiązania:
https://bibliotekanauki.pl/articles/2013068.pdf
Data publikacji:
2000-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Tm
75.50.Bb
Opis:
Thermal stability and magnetic properties of thin films, of a few Fe-based amorphous and nanocrystalline alloys, have been studied. The alloys belong to the class Fe-M-B, whose representatives are: Fe$\text{}_{87}$Zr$\text{}_{4}$Cu$\text{}_{1}$B$\text{}_{8}$, Fe$\text{}_{87}$Zr$\text{}_{7}$B$\text{}_{6}$, and Fe$\text{}_{87}$Zr$\text{}_{7}$Al$\text{}_{1}$B$\text{}_{5}$ and are of particular interest because of their wide variety of magnetic properties. The films were prepared by flash evaporation onto liquid nitrogen cooled substrates. Measurements of the Kerr effect, the Hall effect, and ferromagnetic resonance in the films were carried out as functions of the annealing temperature. It was found that the changes in the coercive field H$\text{}_{c}$, resonance linewidth ΔH$\text{}_{pp}$, effective magnetization M$\text{}_{eff}$, Hall parameters, and resistance were correlated with the structural changes in the studied films.
Źródło:
Acta Physica Polonica A; 2000, 97, 3; 463-466
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Optoelectronic Properties of ZnS Nanostructured Thin Film
Autorzy:
Borah, J.
Sarma, K.
Powiązania:
https://bibliotekanauki.pl/articles/1812035.pdf
Data publikacji:
2008-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.61.Tm
74.25.Gz
Opis:
ZnS nanocrystalline thin films were grown into the polyvinyl alcohol matrix and were synthesized by chemical route. Films were prepared on glass substrate by varying the deposition parameters and pH of the solution. Nanocrystalline thin film prepared under optimum growth conditions shows band gap value 3.88 eV as observed from optical absorption data. The band gap is found to be higher (3.88 eV) indicating blue shift. The particle size, calculated from the shift of direct band gap, due to quantum confinement effect is 5.8 nm. Photoluminescence spectrum shows the blue luminescence peaks (centered at 425 nm), which can be attributed to the recombination of the defect states. ZnS nanocrystalline thin films are also found to be photosensitive in nature. However, the photosensitivity decreases due to ageing and exposure to oxygen. In case of nanostructured film, the I-V characteristics are observed in dark and under illumination showing photosensitive nature of these films, too. The dark current, however, is found to be greater when observed in vacuum compared to air. Both dark current and photocurrent are found to be ohmic in nature up to a certain applied bias. The observed data shows that nanostructured films are found to be suitable for device application. The surface morphology of the film is also characterized by scanning electron microscope.
Źródło:
Acta Physica Polonica A; 2008, 114, 4; 713-719
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
IR Resonant Absorption in Molecular Nanofilms
Autorzy:
Pelemiš, S.
Šetrajčić, J.
Powiązania:
https://bibliotekanauki.pl/articles/1795586.pdf
Data publikacji:
2009-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Aa
73.61.Tm
77.22.-d
77.55.+f
Opis:
The paper presents a theoretical research of changes of optical properties of various nanofilm molecular crystals which are caused by the presence of two parallel and close borders. We used combined analytical-numerical calculation to find the allowed energy states of excitons and their spatial distribution (per layers) along the axis perpendicular to surface planes. We determined permittivity for the observed models of these ultrathin dielectric films and explored the influence of boundary parameters on the occurrence of discrete (per frequencies) and selective (per layers) absorption. The conditions for occurrence of smallest number of resonant absorption lines have been found and their localization has been defined.
Źródło:
Acta Physica Polonica A; 2009, 116, 4; 579-584
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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