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    Wyświetlanie 1-10 z 10
    Tytuł:
    Impurity-Scattering Limited Electron Mobility in Free Standing Quantum Wires: Image Charge Effect
    Autorzy:
    Vagner, P.
    Mos̆ko, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952718.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.-h
    73.50.Bk
    Opis:
    We calculate the impurity-scattering limited mobility of the one-dimensional electron gas in a rectangular GaAs quantum wire confined in the vertical (growth) direction by n-modulation doped AlGaAs layers and free standing along the transverse direction. The scattering potential of the ionized impurity is obtained by solving the Poisson equation with z-dependent electrostatic permittivity in order to take into account the image charge effect due to the abrupt permittivity change at the GaAs/air interfaces. We show that the "image impurity" scattering tends to drastically reduce the electron mobility for sufficiently small (≈10 nm) transverse wire widths.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1103-1107
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Charge Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems
    Autorzy:
    Walukiewicz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931859.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Bk
    73.40.Kp
    Opis:
    General aspects of the electronic transport in two-dimensional and quasi-three-dimensional semiconductor systems are discussed. Contributions of different scattering processes to the total electron and hole mobilities in various types of modulation doped heterostructures are calculated. It is shown that in a wide temperature range phonon scattering is the principal scattering mechanism limiting electron and hole mobilities in high quality AlGaAs/GaAs modulation doped heterostructures. Scattering from rough walls in wide parabolic wells is briefly reviewed.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 35-46
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Conductance Modulation in Semiconductor Microstructure with Periodic Array of Micromagnets
    Autorzy:
    Tralle, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992495.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Gd
    73.50.Bk
    Opis:
    A simple theory for the Aharonov-Bohm-like effect (dynamical phase) in semiconductor microstructure, is presented in a paper, assuming a "ballistic spin transport". If in one of the arms of microstructure there is an additional periodic magnetic field, the spin wave function acquires a phase shift due to additional spin precession about that field. By introducing quaternion representation of the elements of propagation matrices, one can calculate the transition coefficient of the structure. It is shown that the deep modulation of the conductance could be achieved.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 603-610
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interplay of Quantum Size Effect and Surface Electron Scattering in Conductivity of Thin Films
    Autorzy:
    Makarov, N. M.
    Moroz, A. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964813.pdf
    Data publikacji:
    1997-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Bk
    72.10.Fk
    Opis:
    We constructed the most general theory of the classical and quantum static electron transport for 3D films with randomly rough boundaries. The electron-surface interaction was included via approximation with mildly sloping asperities, when the rms height ξ of boundary defects is less than their mean length L. Then we analyzed influence of spatial quantization and electron-surface scattering on the film conductivity ⟨σ⟩ and their interference. Joint action of those factors leads to peculiarities (sharp dips) of ⟨σ⟩ versus the sample thickness d appearing at points where a new conducting electron channel opens. The dips have fundamental quantum origin and are caused by size quantization of electron-surface scattering rate. When studying ⟨σ⟩ versus the bulk mean free path l of electrons, we revealed that, as bulk collisions vanish (l → ∞), the quantum conductivity approaches finite residual value associated with electron-surface interaction. The residual conductivity was first shown to possess either quantum or exclusively classical origin depending on d, l, and the electron wavelength. On the basis of the investigations provided, the relation between quantum and classical effects in the film conductivity was clarified. The theoretical results were successfully tested against recent experimental data concerning the conductivity of ultrathin films.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 2; 457-460
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermalization of One-Dimensional Electron Gas by Many-Body Coulomb Scattering
    Autorzy:
    Moško, M.
    Cambel, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931928.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.-h
    73.50.Bk
    78.47.+p
    Opis:
    Quantum wires are peculiar in the sense that binary electron-electron collisions cannot thermalize energy distribution of the electrons in the same subband. We show that such thermalization occurs through many-body Coulomb scattering. We consider one-dimensional electron gas described by Newton equations of motion with many-body Coulomb forces. These equations are solved by molecular dynamics technique. Thermalization of the non-equilibrium distribution towards Maxwell function is demonstrated for a single-subband GaAs wire.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 157-160
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Near-Band Edge Spectral Hole in Quantum Well: No Evidence for Subpicosecond Plasma Thermalization
    Autorzy:
    Mos̆ko, M.
    Mos̆ková, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952682.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.-h
    73.50.Bk
    78.47.+p
    Opis:
    We show that at low carrier energies and densities the carriers in a two-dimensional Coulomb gas interact via classical unscreened carrier-carrier collisions. This allows us to calculate exactly the thermalization due to the two-dimensional carrier-carrier collisions in a nonthermal low-density (≈10$\text{}^{10}$ cm$\text{}^{-2}$) two-dimensional plasma excited near the band edge of an undoped GaAs quantum well. The thermalization is found to be 10-15 times slower than the 200 fs thermalization deduced from the previous spectral-hole burning measurements, which means that the spectral hole does not reflect the thermalization process. We also show that the Born approximation fails in describing such carrier-carrier collisions.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1055-1059
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spin Hall Effect in a Two-Dimensional Electron Gas with Constant Dresselhaus and Random Rashba Spin-Orbit Interactions
    Autorzy:
    Dyrdał, A.
    Barnaś, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403633.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.63.-b
    72.25.Dc
    73.50.Bk
    Opis:
    Spin Hall effect in a two-dimensional electron gas with uniform Dresselhaus and random Rashba spin-orbit interactions is considered theoretically. Using Kubo formalism we derive some analytical formula for the spin Hall conductivity. It is shown that the contribution due to randomly fluctuating Rashba field disappears in the limit of strong Dresselhaus coupling.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1016-1018
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Size Effects on the Electrical Resistivity of the Ultra-Thin Metallic Film
    Autorzy:
    Paja, A.
    Działo, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198662.pdf
    Data publikacji:
    2014-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.-h
    73.50.Bk
    73.63.-b
    73.63.Hs
    Opis:
    In this article we investigate the electron-phonon interaction in metals in the system strongly reduced in one dimension. The Fermi sphere which represents the free-electron structure of a bulk metal was replaced by a discrete set of the Fermi disks. Using the variational expression for resistivity the temperature and film thickness dependences of the resistivity were derived and compared with experimental data.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 5; 1220-1223
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Resistivity of the Monoatomic Metallic Layer
    Autorzy:
    Paja, A.
    Działo, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400157.pdf
    Data publikacji:
    2013-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.-h
    73.50.Bk
    73.63.-b
    73.63.Hs
    Opis:
    We present new formula which describes the change of electrical resistivity of a monoatomic metallic layer with temperature. The results are compared with those given by the Bloch-Grüneisen formula for bulk metals. Our calculated values compared with those for bulk materials are significantly higher at low temperatures (T<0.1θ) and apparently lower at the remaining range of temperatures. Both effects can be explained by the low dimensionality of the sample.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 4; 770-772
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
    Autorzy:
    Krajewski, T.
    Luka, G.
    Smertenko, P.
    Zakrzewski, A.
    Dybko, K.
    Jakiela, R.
    Wachnicki, L.
    Gieraltowska, S.
    Witkowski, B.
    Godlewski, M.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492501.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.ag
    73.50.-h
    73.50.Bk
    73.61.Ga
    81.15.-z
    81.15.Gh
    Opis:
    The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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