- Tytuł:
- Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites
- Autorzy:
-
Vengalis, B.
Rosa, A. M.
Devenson, J.
Šliužienė, K.
Lisauskas, V.
Oginskis, A.
Anisimovas, F.
Pyragas, V. - Powiązania:
- https://bibliotekanauki.pl/articles/2041760.pdf
- Data publikacji:
- 2005-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.40.Cg
73.40.Lg
75.50.Dd - Opis:
- High crystalline quality films of n-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$, p-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO$\text{}_{3}$(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ Mn O$\text{}_{3}$/La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.
- Źródło:
-
Acta Physica Polonica A; 2005, 107, 2; 290-293
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł