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    Wyświetlanie 1-7 z 7
    Tytuł:
    Ultrahigh Frequency Components in the Hot Electron Photomagnetoelectric Response of Strongly Photoexcited Narrow-Gap Semiconductors
    Autorzy:
    Shatkovskis, E.
    Galickas, A.
    Kiprijanovič, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041752.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    72.70.Jv
    07.57.Yb
    42.62.Hk
    Opis:
    A photomagnetoelectric effect has been investigated in semiconductors InAs and Cd$\text{}_{x}$Hg$\text{}_{1-x}$Te (x=0.2 and 0.26) excited by Q-switched neodymium-YAG laser. The photomagnetoelectric signal undergos double-sign-inversion when the intensity of the exciting light pulses exceeds a critical value I$\text{}_{c}$=5×10$\text{}^{24}$ photons/(cm$\text{}^{2}$ s) for InAs and (1-4)×10$\text{}^{24}$ photons/(cm$\text{}^{2}$ s) for Cd$\text{}_{x}$Hg$\text{}_{1-x}$Te samples. It is shown that a frequency spectrum of photomagnetoelectric response is broadened significantly in the region of high frequencies. In general three frequency bands were distinguished. From this investigation it follows that using laser pulses of a duration t$\text{}_{opt}$ 1-10 ps the photomagnetoelectric signal in the terahertz range may be generated.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 271-274
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defects in Ultra-Fine Grained Mg and Mg-Based Alloys Prepared by High Pressure Torsion Studied by Positron Annihilation
    Autorzy:
    Čížek, J.
    Procházka, I.
    Smola, B.
    Stulíková, I.
    Kužel, R.
    Matěj, Z.
    Cherkaska, V.
    Islamgaliev, R.
    Kulyasova, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043304.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    79.60.Jv
    61.72.-y
    Opis:
    Despite the favourable strength and thermal stability, a disadvantage of the Mg-based alloys consists in a low ductility. Recently it has been demonstrated that ultra fine grained metals with grain size around 100 nm can be produced by high pressure torsion. A number of ultra fine grained metals exhibit favourable mechanical properties consisting in a combination of a very high strength and a significant ductility. For this reason, it is highly interesting to examine microstructure and physical properties of ultra fine grained Mg-based light alloys. Following this purpose, microstructure investigations and defect studies of ultra fine grained pure Mg and ultra fine grained Mg-10%Gd alloy prepared by high pressure torsion were performed in the present work using positron annihilation spectroscopy combined with X-ray diffraction, TEM observations, and microhardness measurements. Positrons are trapped at dislocations in Mg and Mg-10%Gd alloy deformed by high pressure torsion. A number of dislocations increases with the radial distance r from the centre to the margin of the sample. No microvoids (small vacancy clusters) were detected. Mg-10%Gd alloy deformed by high pressure torsion exhibits a homogeneous ultra fine grained structure with a grain size around 100 nm and high dislocations density. On the other hand, pure Mg deformed by high pressure torsion exhibits a binomial type of structure which consists of "deformed regions" with ultra fine grained structure and a high dislocation density and dislocation-free "recovered regions" with large grains. It indicates a dynamic recovery of microstructure during high pressure torsion processing.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 738-744
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    AlGaAs to GaAs Energy Transfer Mechanisms in AlGaAs/GaAs Structures
    Autorzy:
    Karpińska, K.
    Godlewski, M.
    Żytkiewicz, Z. R.
    Chen, W. M.
    Weber, E. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1921617.pdf
    Data publikacji:
    1992-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    76.70.Hb
    78.55.Cr
    Opis:
    The results of photoluminescence and optically detected cyclotron resonance experiments are presented for thick AlGaAs epilayers grown by liquid phase electroepitaxy method on GaAs:Cr substrate. These results indicate an efficient energy transfer from excited AlGaAs to GaAs.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 4; 713-716
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Carrier Transport in GaN Single Crystals and Radiation Detectors by Thermally Stimulated Methods
    Autorzy:
    Kažukauskas, V.
    Kalendra, V.
    Vaitkus, J.-V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041765.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    72.20.Fr
    72.80.Ey
    78.70.-g
    85.30.De
    Opis:
    We investigated single crystals of GaN and thin film GaN radiation detectors by thermally stimulated currents and thermally stimulated depolarization methods in order to characterize carrier transport properties as influenced by material defect structure. In thick GaN no expressed structure of the thermally stimulated current spectra was observed in the temperature range from 100 K up to 350 K, which could be characteristic of the thermal carrier generation from trap levels. The experimental facts imply that the thermally stimulated current spectra might be caused not by carrier generation, but it could be due to thermal mobility changes. Therefore we had applied the numerical analysis by taking into account carrier scattering by ionized impurities and phonons. It was found that mobility limited by ionized impurities varies as T$\text{}^{2.8}$ and lattice scattering causes the dependence T$\text{}^{-3.5}$. The highest mobility values were up to 1550 cm$\text{}^{2}$/(V s) at 148-153 K. Such high values indicate relatively good quality of the single GaN thick crystals. In high resistivity GaN detectors irradiated by high doses of high-energy neutrons and X-rays current instabilities were observed which could be caused by the change of carrier drift paths in a highly disordered matter. A model of carrier percolation transport is presented.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 340-345
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Irradiation by High-Energy Protons on GaN Detectors
    Autorzy:
    Kažukauskas, V.
    Kalendra, V.
    Vaitkus, J.
    Jasiulionis, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813395.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    72.20.Fr
    72.80.Ey
    78.70.-g
    85.30.De
    Opis:
    We had investigated effects of the irradiation by 24 GeV protons with doses ranging from $1×10^{14}$ up to $1×10^{16} p//cm^2$ on the properties of GaN ionising radiation detectors. In theγ-spectra of the samples radiation of $\text{}^7Be,$ $\text{}^{22}Na,$ and other long-lived radionuclides with A <70 was identified. Their activities were proportional to the irradiation dozes. Device contact properties were analysed by current-voltage I-V dependences. Created defects were revealed by the thermally stimulated defect spectroscopy. In the less irradiated samples the following values of the effective thermal activation energies were found: 0.12-0.16 eV, 0.18-0.22 eV, 0.35-0.42 eV, and 0.84-0.94 eV. Meanwhile, in the detectors irradiated with the highest doses only current growth with the activation energy of about 0.8-1.0 eV could be identified. Effects of percolation transport in disordered media were proved in the irradiated material.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 1013-1016
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optically Detected Magnetic Resonance Studies of Te-Related Shallow Donors in Al$\text{}_{x}$Ga$\text{}_{1-x}$As
    Autorzy:
    Godlewski, M.
    Fronc, K.
    Chen, W. M.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1890838.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.20.Jv
    76.70.Hb
    78.55.Cr
    Opis:
    The first studies of the Optically Detected Magnetic Resonance (ODMR) of Te-doped (x = 0.42) are presented. The ODMR data indicate an efficient energy transfer between epilayer and GaAs substrate.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 341-344
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positronium Formation with Trapped Electrons in n-Alkanes
    Autorzy:
    Zgardzińska, B.
    Goworek, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505332.pdf
    Data publikacji:
    2011-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    36.10.Dr
    36.20.Fz
    61.80.-x
    72.20.Jv
    78.70.Bj
    Opis:
    Positronium (Ps) formation during self-irradiation by positrons was observed in n-alkanes of various carbon chain length. The rise of Ps intensity with time of irradiation is the result of positronium formation with trapped excess electrons. In the range T < 190 K the saturation value of positronium intensity changes with temperature mainly due to the change of positron mobility. With the increase of the irradiation dose the process of charging traps is slowing down and this effect is ruled mainly by interaction of excess electrons with ionization products during electron's migration to the traps.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 3; 328-331
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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