- Tytuł:
- Doping Dependence of Spin Dynamics of Drifting Electrons in GaAs Bulks
- Autorzy:
-
Spezia, S.
Persano Adorno, D.
Pizzolato, N.
Spagnolo, B. - Powiązania:
- https://bibliotekanauki.pl/articles/1506224.pdf
- Data publikacji:
- 2011-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.70.Ej
72.25.Dc
72.25.Rb - Opis:
- We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in an n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing lifetimes and depolarization lengths as a function of the doping density in the range $10^{13}$ ÷ 5 × $10^{16} cm^{-3}$, for different values of the amplitude of the static electric field (0.1 ÷ 1.0 kV/cm). We find an increase of the electron spin lifetime as a function of the doping density, more evident for lattice temperatures lower than 150 K. Moreover, at very low intensities of the driving field, the spin depolarization length shows a nonmonotonic behaviour with the density. At the room temperature, spin lifetimes and depolarization lengths are nearly independent on the doping density. The underlying physics is analyzed.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 2; 250-252
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł