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Wyświetlanie 1-15 z 32
Tytuł:
Pressure Study of Charged Donor Ordering in HgSe Doped with Iron and Gallium
Autorzy:
Skierbiszewski, C.
Suski, T.
Kossut, J.
Wilamowski, Z.
Dobrowolski, W.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1891020.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
Transport experiments (Hall effect and conductivity) under hydrostatic pressure up to 1 GPa at liquid helium temperatures on HgSe: Fe, Ga (N$\text{}_{Fe}$ = 2 x 10$\text{}^{19}$ cm$\text{}^{-3}$; 0 ≤ N$\text{}_{Ga}$ ≤ 10$\text{}^{19}$ cm$\text{}^{-3}$) were performed. The results show that the gallium co-doping of HgSe:Fe decreases the degree of spatial correlations between charged impurities. Under the hydrostatic pressure, used as a tool for changing the ratio of the charged to neutral impurities, this effect is even more pronounced. A qualitative agreement between the calculation within the short-range correlation model and our experimental data is achieved.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 401-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of Inelastic Mean Free Path of Electrons in Noble Metals
Autorzy:
Doliński, W.
Mróz, S.
Palczyński, J.
Gruzza, B.
Bondot, P.
Porte, A.
Powiązania:
https://bibliotekanauki.pl/articles/1892437.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
79.20.Fv
Opis:
The experimental values of Inelastic Mean Free Path (λ$\text{}_{IMFP}$) of electrons in noble metals (Ag, Au, Cu) are determined in the electron energy range 150-2000 eV. The method used consists of the measurements and theoretical calculations of the coefficient of elastic backscattering of electrons from a solid surface η$\text{}_{e}$. The obtained values of λ$\text{}_{IMFP}$ are compared with the data available in the literature.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 193-199
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Scattering and the Band Structure of Mixed Crystals Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se
Autorzy:
Skierbiszewski, C.
Wilamowski, Z.
Suski, T.
Kossut, J.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1923803.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
In this paper the dependence of the band structure and the electron scattering mechanisms on the molar fraction x are studied in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se. The crossover from the zero-gap band to the open band-gap configuration at x ≈ 0.08 is predicted. We explain the drop of the electron mobility for x > 0.002 by the alloy scattering mechanism.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 809-812
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier Heating Efficiency in Optically Detected Cyclotron Resonance Experiment
Autorzy:
Dedulewicz, S.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929627.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Gq
72.10.Di
72.10.Fk
Opis:
Monte Carlo calculations of carrier heating efficiency in optically detected cyclotron resonance experiment are presented. It is shown that electrons accelerated by microwave electric field gain energy sufficient for impact ionization of shallow centers and for exciton dissociation. It is also explained why very sharp thresholds for impact processes were observed in the optically detected cyclotron resonance investigations.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 535-537
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impurity Self-Screening
Autorzy:
Wilamowski, Z.
Przybylińska, H.
Powiązania:
https://bibliotekanauki.pl/articles/1929774.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.45.-d
72.10.Fk
Opis:
In a mixed valence impurity system the distribution of impurity charges can be adjusted to minimize the Coulomb energy of inter-impurity interactions. In this paper we discuss the possibility of extending the methods of analytical evaluation of the pair correlation function for classical liquids to apply to a system with a built-in disorder, where the occupation probability is governed by the Fermi-Dirac statistics.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 832-834
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of Electron Transport in PbTe:Cr due to Presence of Resonant Impurity State
Autorzy:
Grodzicka, E.
Dobrowolski, W.
Kossut, J.
Story, T.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1929686.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.10.Fk
72.80.Jc
Opis:
The results of transport investigation of Pb$\text{}_{1-x}$Cr$\text{}_{x}$Te (x ≤ 0.009) in temperature range 3.5-300 K are presented. The obtained electron concentration and electron mobility vs. temperature and Cr concentration data are interpreted and discussed within the model assuming that Cr in PbTe forms a donor state resonant with the conduction band.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 599-603
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Aharonov-Bohm Effect at Misfit Dislocations in GaAsSb/GaAs Heterostructures
Autorzy:
Figielski, T.
Wosiński, T.
Mąkosa, A.
Dobrowolski, W.
Raczyńska, J.
Powiązania:
https://bibliotekanauki.pl/articles/1950746.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
73.40.Kp
03.65.Bz
Opis:
We examined the current flowing through p$\text{}^{+}$-n junction of the lattice mismatched GaAs$\text{}_{1-x}$Sb$\text{}_{x}$/GaAs heterostructure in a transverse magnetic field at 1.8 K. We have found the appearance of current oscillations, periodic as a function of the magnetic field, that are due to the Aharonov-Bohm effect of holes passed around charged dislocations.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 773-776
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
HgSe Based Mixed Crystals Doped with Fe Resonant Donors
Autorzy:
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1943963.pdf
Data publikacji:
1996-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.10.Fk
71.55.Gs
Opis:
The article reviews the physical properties of semimagnetic semiconductors of the type Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$A$\text{}_{y}^{II}$Se$\text{}_{1-z}$B$\text{}_{z}^{VI}$ and Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$Mn$\text{}_{y}$Se. Optical, magnetooptical, transport and magnetotransport experiments showed that in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se substitutional iron forms a resonant donor state whose energy is superimposed on the conduction band continuum. Resulting anomalous properties of electron scattering rate, i.e. strong enhancement of electron mobility (or drop of Dingle temperature), which occur in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se at low temperatures in a certain Fe concentration range, are described. Next, theoretical models describing this anomalous reduction of the scattering rate are discussed. The description of thermomagnetic, optical, magnetooptical and magnetic properties of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, with emphasis on features originating from the peculiar iron level position in the band structure of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, conclude the first part of the present paper. In the second part the physical properties of the semiconducting alloys Hg$\text{}_{1-x}$Mn$\text{}_{x}$Se:Fe, Hg$\text{}_{1-v}$Cd$\text{}_{v}$Se:Fe, Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se:Fe, HgSe$\text{}_{1-x}$Te$\text{}_{x}$:Fe and HgSe$\text{}_{1-x}$S$\text{}_{x}$:Fe are described. In particular, the dependence of the position of the Fe resonant donor state in the band structure on the crystal composition is discussed. The values of predicted Γ$\text{}_{6}$ and Γ$\text{}_{8}$ band offsets between HgSe and CdSe, HgTe, MnSe and ZnSe are given. The considerable attention is paid to the discussion of the mechanism limiting the electron mobility in the mixed alloys. Finally, topics which have not been explicitly covered in this review are mentioned and open problems are discussed.
Źródło:
Acta Physica Polonica A; 1996, 89, 1; 3-36
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interplay of Quantum Size Effect and Surface Electron Scattering in Conductivity of Thin Films
Autorzy:
Makarov, N. M.
Moroz, A. V.
Powiązania:
https://bibliotekanauki.pl/articles/1964813.pdf
Data publikacji:
1997-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Bk
72.10.Fk
Opis:
We constructed the most general theory of the classical and quantum static electron transport for 3D films with randomly rough boundaries. The electron-surface interaction was included via approximation with mildly sloping asperities, when the rms height ξ of boundary defects is less than their mean length L. Then we analyzed influence of spatial quantization and electron-surface scattering on the film conductivity ⟨σ⟩ and their interference. Joint action of those factors leads to peculiarities (sharp dips) of ⟨σ⟩ versus the sample thickness d appearing at points where a new conducting electron channel opens. The dips have fundamental quantum origin and are caused by size quantization of electron-surface scattering rate. When studying ⟨σ⟩ versus the bulk mean free path l of electrons, we revealed that, as bulk collisions vanish (l → ∞), the quantum conductivity approaches finite residual value associated with electron-surface interaction. The residual conductivity was first shown to possess either quantum or exclusively classical origin depending on d, l, and the electron wavelength. On the basis of the investigations provided, the relation between quantum and classical effects in the film conductivity was clarified. The theoretical results were successfully tested against recent experimental data concerning the conductivity of ultrathin films.
Źródło:
Acta Physica Polonica A; 1997, 92, 2; 457-460
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The H$\text{}_{2}$ Molecule in Semiconductors: An Angel in GaAs, a Devil in Si
Autorzy:
Estreicher, S. K.
Powiązania:
https://bibliotekanauki.pl/articles/2035568.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
66.30.Lw
72.10.Fk
Opis:
The electrical and optical properties of semiconductors are largely determined by the defects and impurities they contain. Without a doubt, hydrogen is the impurity which exhibits the most varied and exotic properties. In most semiconductors, it is found in three charge states and four configurations. It forms (at least) two types of dimers as well as small and large precipitates such as platelets. H also interacts with impurities and defects. It removes or changes the electrical activity of many shallow and deep centers, and catalyzes the diffusion of interstitial oxygen (in Si). Sometimes, it exhibits quantum tunneling and is associated with unusual effects such as Fermi resonances. But one of the most exotic forms of hydrogen in GaAs and Si is the interstitial H$\text{}_{2}$ molecule, which appears to play a critical role in processes such as the "smart cut". It is the only interstitial molecule observed (so far) in semiconductors. In GaAs, it behaves like a nearly-free rotator, with properties very much as one would expect them to be. But in Si, the early experiments were puzzling. No ortho/para splitting was observed, the symmetry appeared to be C$\text{}_{1}$, the single HD line was at the wrong place and had the wrong amplitude, and other features seemed strange as well. Recent experimental studies have now resolved many issues. However, the behavior of the simplest molecule in the Universe proved to be a tough nut to crack, which goes to show that devils can be a lot more fun than angels after all.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 513-528
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Relaxation Time of Spin-Polarized Electrons
Autorzy:
Paja, A.
Spisak, B. J.
Powiązania:
https://bibliotekanauki.pl/articles/2038184.pdf
Data publikacji:
2004-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
72.10.Fk
72.15.Lh
72.25.Ba
72.25.Rb
Opis:
We study the mechanism of spin relaxation in 3D disordered metallic systems due to the spin-orbit scattering on charged impurities. The transport relaxation time for spin-polarized conduction electrons is calculated analytically in the presented model, where the screened Coulomb potential is used for the description of impurities.
Źródło:
Acta Physica Polonica A; 2004, 106, 1; 69-76
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anderson Localization of Electromagnetic Waves in Dielectric Media: Model Studies
Autorzy:
Rusek, M.
Orłowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2044616.pdf
Data publikacji:
2006-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.25.Fx
42.25.Hz
72.10.Fk
78.20.Ci
Opis:
Anderson localization of electromagnetic waves in random arrays of dielectric cylinders confined within a planar metallic waveguide is studied. The disordered dielectric medium is modeled by a system of randomly distributed 2D electric dipoles. An effective theoretical approach based on the method of images is developed. A clear distinction between isolated localized waves (which exist in finite media) and the band of localized waves (which appears only in the limit of the infinite medium) is presented. The Anderson transition emerging in the limit of an infinite medium is observed both in finite size scaling analysis of transmission and in the properties of the spectra of some random matrices. The sound physical interpretation of the obtained results suggests deeper insight into the existing experimental and theoretical work.
Źródło:
Acta Physica Polonica A; 2006, 109, 1; 109-119
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectroscopy of a Single Si Donor by the Resonant Tunnelling Experiment
Autorzy:
Baj, M.
Gryglas, M.
Jouault, B.
Maude, D.
Faini, G.
Gennser, U.
Cavanna, A.
Powiązania:
https://bibliotekanauki.pl/articles/2046906.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.-b
73.40.Gk
73.20.Hb
72.10.Di
72.10.Fk
Opis:
Resonant tunnelling via single impurities placed in a single barrier was experimentally studied. The typically observed structures in the current-voltage characteristics seem to be paired. Such a pair can be interpreted as ground and excited states of an impurity, related to X$\text{}_{xy}$ and X$\text{}_{z}$ valleys, which is in agreement with the results obtained for big mesas. However, it is not clear why X$\text{}_{xy}$ states can be seen without any phonon participation.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 157-162
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Disorder on Spin and Charge Excitations in the Fractional Quantum Hall Effect
Autorzy:
Výborný, K.
Müller, Ch.
Dethlefsen, A. F.
Haug, R. J.
Wójs, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047400.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.-f
75.10.Jm
72.10.Fk
73.63.-b
Opis:
A simple model of disorder in fractional quantum Hall systems is combined with the standard exact diagonalisation technique. Electron-density-dependent gaps at filling factors 1/3,2/3,2/5, and 3/5 measured by activated transport can then be fitted with a single reasonable value of d which has the meaning of the separation of ionized donors from the quasi-2D electron gas.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 249-254
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light Localization in Left-Handed Media
Autorzy:
Rusek, M.
Orłowski, A.
Mostowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2047827.pdf
Data publikacji:
2007-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.65.Nk
41.20.Jb
72.10.Fk
72.15.Rn
Opis:
Localized waves in disordered left-handed materials are studied using a generalized coupled-dipole model. Resonances in an open system consisting of randomly distributed electric and magnetic dipoles are investigated. A new type of long-lived resonance modes localized at the boundary of the system is found. They resemble evanescent waves responsible for a superfocusing phenomenon by a left-handed lens.
Źródło:
Acta Physica Polonica A; 2007, 112, 4; 673-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 32

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