Temat: 71.70.Fk - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: The Structural and Electronic Properties of BaO under Epitaxial Strains: First-Principles Calculations
Autorzy:: Yang, Xiong
Wang, Ying
Chen, Yifei
Yan, Huiyu
Powiązania:: https://bibliotekanauki.pl/articles/1191222.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.20.Dg
71.70.Fk
71.15.Mb
Opis:: The structural and electronic properties of alkaline-earth oxide BaO under epitaxial strains are investigated using a first principles density functional theory. The electronic structure is particularly sensitive to the compressive or tensile strain, e.g., the splitting of energy band, the increase of the total density of state, and the shift of the partial density of states. Especially, the trends in the variation of the optical band gap are predicted by two different exchange-correlation potential schemes. Our results indicate that the optical band gaps undergo a decrease for both compressive and tensile strains.
Źródło:: Acta Physica Polonica A; 2016, 129, 1; 64-68
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Strain Induced k-Linear Spin Splitting in III-V Semiconductors
Autorzy:: Skierkowski, A.
Majewski, J. A.
Powiązania:: https://bibliotekanauki.pl/articles/2047724.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.70.Fk
71.15.Rf
71.70.Ej
71.55.Eq
Opis:: We present theoretical studies of the linear-k strain induced spin splitting of the conduction band in the zinc-blende semiconductors. The studies are based on ab initio calculations performed within the density functional theory with non-scalar relativistic effects fully taken into account. This permits one to construct effective Hamiltonian for the strain induced linear-k spin splitting of the zinc-blende semiconductors. This Hamiltonian reproduces fully the structure of the strain induced linear-k spin splitting and generalizes previously introduced and commonly used effective Hamiltonian.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 455-460
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Field Dependence of Spin Lifetimes in Wurtzite Materials
Autorzy:: Majewski, J. A.
Powiązania:: https://bibliotekanauki.pl/articles/2044501.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.15.Mb
71.20.Nr
71.70.Ej
71.70.Fk
Opis:: We present first-principles calculations of the zero field spin splitting of energy bands in wurtzite materials. Our calculations reveal that the huge electric fields originating from strong piezo- and pyroelecric character of nitrides do not increase the spin splitting of bands in nitride heterostructures. This implicates long spin lifetimes in quantum structures based on these materials and weak possibility of tuning with external electric field.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 777-780
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Theoretical Study of Spin Lifetimes in [110] Strained GaAs
Autorzy:: Skierkowski, A.
Majewski, J. A.
Powiązania:: https://bibliotekanauki.pl/articles/2047003.pdf
Data publikacji:: 2006-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
71.70.Fk
71.70.Ej
72.25.Rb
Opis:: We present first-principles studies of the zero field spin splitting of conduction band in [110] strained GaAs that determine spin lifetimes in semiconductors. Our calculations reveal strong anisotropy of the linear-k spin splitting in the (110) plane of the Brillouin zone and very minor in the (001) plane. This provides a qualitative understanding of the difference in the spin lifetimes in the GaAs/AlAs heterostructures grown along [100] and [110] crystallographic directions.
Źródło:: Acta Physica Polonica A; 2006, 110, 3; 353-358
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: A Photoacoustic Study of Xenon Implantation in $CuInSe_2$
Autorzy:: Satour, F.
Zegadi, A.
Merabet, A.
Powiązania:: https://bibliotekanauki.pl/articles/1492557.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.70.Cv
78.20.Ci
78.40.Fy
61.82.Fk
71.55.-i
Opis:: In this paper, we report a study on the optical properties of xenon ion implanted $CuInSe_2$ single crystals using a high resolution near-infrared photoacoustic spectrometer of the gas-microphone type. Samples of high quality of $CuInSe_2$, p-type conducting, have been implanted with $Xe^{+}$ at 40 keV with doses of $5 \times 10^{15},$ $10^{16}$ and $5 \times 10^{16}$ ions/$cm^2$. Photoacoustic spectra have been measured before and after implantation. A newly developed theoretical model based on a two-layer sample configuration has been used to single out the spectral dependence of the absorption coefficient of the implanted layer from that of the substrate. The absorption spectra were used to evaluate the gap energy and to establish ionization energies for several shallow and deep defect states. The resulting effects following the introduction of xenon into $CuInSe_2$ at different doses are discussed in the light of published literature.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-031-A-033
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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