Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "71.55.Fr" wg kryterium: Temat

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-10 z 10
    Tytuł:
    Coulomb versus Madelung Gap: Ordering in a System of Point Charges
    Autorzy:
    Sobkowicz, P.
    Wilamowski, Z.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929618.pdf
    Data publikacji:
    1993-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Fr
    Opis:
    Spatial correlations of impurity charges in a mixed valence regime are studied with the use of Monte Carlo simulations. The influence of various kinds of disorder on the one-particle density of states is determined. A continuous transitions from a "soft" Coulomb gap (density of states vanishing only at the chemical potential) to a "hard" gap (with a finite range of energies with vanishing density of states) is found, driven by decreasing amount of built-in disorder in the system. The "hard" Coulomb gap resembles the Madelung gap, found in crystalline arrangements of charges. The similarity reflects the fact that both the Coulomb and Madelung gaps are manifestations of the same phenomenon, resulting from ordering of the positions of point charges, the only difference being the range of correlations.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 3; 515-518
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Properties of an Acceptor-like State of Metastable EL2 in n-type GaAs under Uniaxial Stress
    Autorzy:
    Babiński, A.
    Wysmołek, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924252.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.20.Fr
    72.80.Ey
    Opis:
    The electrical resistivity and deep level transient spectroscopy measurements of n-type GaAs under uniaxial stress for [100] and [111] directions at low temperatures are presented. After the transformation of EL2 to its metastable state the stress induced strong anisotropy in the increase in resistivity was observed. The observed splitting of the acceptor-like state of metastable EL2 implies the trigonal symmetry of that defect.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 908-910
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Properties of InGaP Doped with Si
    Autorzy:
    Litwin-Staszewska, E.
    Trzeciakowski, W.
    Piotrzkowski, R.
    Gonzalez, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991938.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Fr
    72.80.Ey
    71.55.Eq
    Opis:
    We measured Hall concentration n in InGaP:Si epitaxial layers grown by MBE as a function of pressure P up to 2 GPa and of temperature T from 77 to 300 K. We interpreted our results in terms of the broad distribution of impurity states resonant with the conduction band. From the low-temperature n(P) dependence we can directly obtain the total density of impurity states around the Fermi level ρ(E$\text{}_{F}$). The Fermi level can be shifted with respect to impurity states by applying pressure and by using samples with different n. In this way we obtain ρ(E) in a wide energy range. We discuss the possible reasons for the observed broad distribution of ρ(E).
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 431-435
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Evidence for Alloy Splitting of Ge Related DX State in Al$\text{}_{x}$Ga$\text{}_{1-x}$As
    Autorzy:
    Skierbiszewski, C.
    Piotrzkowski, R.
    Lubke, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992190.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Fr
    Opis:
    Thermal emission from resonant DX levels in Ge-doped GaAlAs was studied by measuring the temperature transients of free electron concentration. Pressure was used to fill the levels with electrons. Two emission peaks are observed in AlGaAs:Ge. This enables us to confirm that Ge, similarly to Si dopant, is stabilized upon dangling bond C$\text{}_{3v}$ configuration in AlGaAs. Analysis of experimental data allows us to determine parameters of two components of the DX multilevel system. Evaluated alloy splitting of ground and top of the barrier states: 45 meV is comparable with determined for Si donor.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 531-533
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    HgSe Based Mixed Crystals Doped with Fe Resonant Donors
    Autorzy:
    Dobrowolski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1943963.pdf
    Data publikacji:
    1996-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Fr
    72.10.Fk
    71.55.Gs
    Opis:
    The article reviews the physical properties of semimagnetic semiconductors of the type Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$A$\text{}_{y}^{II}$Se$\text{}_{1-z}$B$\text{}_{z}^{VI}$ and Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$Mn$\text{}_{y}$Se. Optical, magnetooptical, transport and magnetotransport experiments showed that in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se substitutional iron forms a resonant donor state whose energy is superimposed on the conduction band continuum. Resulting anomalous properties of electron scattering rate, i.e. strong enhancement of electron mobility (or drop of Dingle temperature), which occur in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se at low temperatures in a certain Fe concentration range, are described. Next, theoretical models describing this anomalous reduction of the scattering rate are discussed. The description of thermomagnetic, optical, magnetooptical and magnetic properties of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, with emphasis on features originating from the peculiar iron level position in the band structure of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, conclude the first part of the present paper. In the second part the physical properties of the semiconducting alloys Hg$\text{}_{1-x}$Mn$\text{}_{x}$Se:Fe, Hg$\text{}_{1-v}$Cd$\text{}_{v}$Se:Fe, Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se:Fe, HgSe$\text{}_{1-x}$Te$\text{}_{x}$:Fe and HgSe$\text{}_{1-x}$S$\text{}_{x}$:Fe are described. In particular, the dependence of the position of the Fe resonant donor state in the band structure on the crystal composition is discussed. The values of predicted Γ$\text{}_{6}$ and Γ$\text{}_{8}$ band offsets between HgSe and CdSe, HgTe, MnSe and ZnSe are given. The considerable attention is paid to the discussion of the mechanism limiting the electron mobility in the mixed alloys. Finally, topics which have not been explicitly covered in this review are mentioned and open problems are discussed.
    Źródło:
    Acta Physica Polonica A; 1996, 89, 1; 3-36
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Improvement of Electrical Properties of Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se upon Doping with Fe
    Autorzy:
    Dobrowolski, W.
    Grodzicka, E.
    Kossut, J.
    Witkowska, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1921589.pdf
    Data publikacji:
    1992-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.Ey
    72.20.Fr
    71.55.Fr
    Opis:
    Results of measurements of electron concentration and mobility in mixed crystals of Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se (0 ≤ x ≤ 0.07) doped with resonant Fe donors (0 ≤ n$\text{}_{Fe}$ ≤ 5 × 10$\text{}^{19}$ cm$\text{}^{-3}$) at liquid helium temperatures are presented. The data show that there is a considerable improvement of the electrical properties of the material when Fe impurities are present. The analysis of the mobility in terms of the scattering from ionized centers (accounting for possible spatial correlation of impurity charges) and the alloy scattering is in agreement with the measured data.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 4; 681-684
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Iron Impurity Related Optical Transitions in HgSe:Fe
    Autorzy:
    Szuszkiewicz, W.
    Julien, C.
    Balkanski, M.
    Arciszewska, M.
    Witkowska, B.
    Mycielski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1891323.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Fr
    71.70.-d
    78.50.Ge
    Opis:
    Fe$\text{}^{2+}$ crystal field transitions and the heavy hole valence band to the Fe level transitions (e + Fe$\text{}^{3+}$ → Fe$\text{}^{2+}$) have been observed and discussed for HgSe doped with iron.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 437-440
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Metastability of Localized Neutral Donor State In GaAs
    Autorzy:
    Skierbiszewski, C.
    Jantsch, W.
    Lübke, K.
    Wilamowski, Z.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933994.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Fr
    71.55.-i
    Opis:
    Investigations of the photoconductivity of GaAs:Ge under hydrostatic pressure show, in addition to the well known persistent photoconductivity due to the DX state, another giant photoconductivity caused by a neutral localised "A₁" state of the donor. We find that the top of the barrier for the electron recapture to the Α₁ state is pinned to the conduction band edge and the capture cross-section σ(T → ∞) is surprisingly small.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 905-908
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Orientation of Metastable EL2 under Uniaxial Stress
    Autorzy:
    Babiński, A.
    Wysmołek, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931913.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.20.Fr
    72.80.Ey
    Opis:
    Results of electrical resistivity and Hall measurements of n-type GaAs under uniaxial stress along [111] direction performed at low temperature are presented. Alter the transformation of the EL2 defect into its metastable configuration, a stress-induced increase in electrical resistivity related to the capture of electrons by the acceptor state of the metastable EL2([EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$) was observed. It was found that the stress-induced increase in resistivity depended on the method of EL2-photoquenching. The observed effects are explained as the reorientation of EL2* centers in the crystal. The stress coefficients of the triple degenerate and the single degenerate sublevels of the [EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$ are found to be equal to -17 meV/GPa and -41 meV/GPa.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 137-140
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Temperature Dependent Electron Beam Induced Current Study of Defects in Silicon
    Autorzy:
    Sekiguchi, T.
    Kusanagi, S.
    Miyamura, Y.
    Sumino, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924321.pdf
    Data publikacji:
    1993-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Fr
    72.80.Cw
    Opis:
    A new computer-aided electron beam induced current system was developed which makes it possible to obtain two-dimensional mapping of the absolute magnitudes of electron beam induced current signals over the temperature range 15 K-400 K. Electronic states of defects in cast silicon and deformation-induced dislocations in float-zone silicon were investigated from the analyses of temperature dependencies of electron beam induced current contrasts of the defects measured with the system. Electron beam induced current active defects in cast Si were identified to be Fe impurity atoms or Fe-B pairs incorporated at the dislocation core depending on the cooling rate of a crystal. Dislocations in float-zone silicon were shown to have an energy level for carrier recombination in the lower half of the band gap.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 1; 71-79
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies