Temat: 71.55.Dp - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: On the Possible Analogy between Spin-Glasses and Systems
Autorzy:: Łusakowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1920977.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.10.Nr
71.55.Dp
Opis:: An analogy between a spin-glass and a material containing DX centers is postulated. The basis of the analogy is the formal identity of the Hamiltonians of these two systems. A correspondence between parameters of the spin-glass and of the DX system is established. Experiments which could support the above idea are proposed.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 620-622
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Consequences of Spatial Fluctuation of Coulomb Potential in AlGaAs with DX Centers
Autorzy:: Wilamowski, Z.
Kossut, J.
Jantsch, W.
Ostermayer, G.
Powiązania:: https://bibliotekanauki.pl/articles/1890983.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Dp
71.45.Jp
72.80.Ey
Opis:: Electric charges on randomly distributed impurities in semiconductors produce a spatially fluctuating potential. When the impurities are partially filled, their occupancy is not random but there appears a spatial correlation of the impurity charges appearing due to the inter-impurity Coulomb interactions. We show that when these interactions are taken into account then (i) the activation energy of the electron concentration, (ii) thermal emission kinetics, (iii) capture kinetics, (iv) persistent photoconductivity kinetics and (v) the electron mobility (in a steady state as well as during transients) in GaAlAs:Si can be explained in a consistent way. The energy diagram con cerning the DX center levels with respect to minima of the conduction band as well as the capture and emission barriers (including the effect of the alloy splitting) is constructed within an approach making use of the notion of the impurity self-screening.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 385-388
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Spatial Correlation of Impurity Charges Induced by Coulomb Interactions - Application to DX Centers in GaAs
Autorzy:: Kossut, J.
Wilamowski, Z.
Dietl, T.
Świątek, K.
Powiązania:: https://bibliotekanauki.pl/articles/1877485.pdf
Data publikacji:: 1991-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.80.Ey
72.20.Dp
71.55.Eq
Opis:: The electron mobility enhancement observed in heavily doped GaAs under hydrostatic pressure is interpreted in terms of spatial correlation between the donor charges within partially occupied system of impurities induced by strong inter-donor Coulomb interaction. A simple analytic theory is given for both DX$\text{}^{0}$ and DX$\text{}^{-}$ models of the impurity state. The mobility is shown to increase together with pressure in both models. Estimates of the energy of the DX level are strongly perturbed by the inter-donor Coulomb interactions.
Źródło:: Acta Physica Polonica A; 1991, 79, 1; 49-58
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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