Temat: 68.65.Hb - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Micro-photoluminescence studies of CdSe/ZnSe quantum dot structures grown under different conditions
Autorzy:: Rakhlin, M.
Sorokin, S.
Sedova, I.
Usikova, A.
Gronin, S.
Belyaev, K.
Ivanov, S.
Toropov, A.
Powiązania:: https://bibliotekanauki.pl/articles/1156645.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.Hb
78.55.Et
81.07.Ta
Opis:: We report on comparative studies of CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy either with or without predeposition of a sub-monolayer-thick CdTe layer (stressor). Also we consider the structure grown in a thermal activation mode. Emission properties of individual quantum dots are investigated by micro-photoluminescence spectroscopy using 500 nm apertures opened in a non-transparent gold mask. The density of emitting quantum dots and the spectral width of the single-dot emission lines are estimated.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-117-A-119
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs
Autorzy:: Sadowski, J.
Kanski, J.
Adell, M.
Domagała, J. Z.
Janik, E.
Łusakowska, E.
Brucas, R.
Hanson, M.
Powiązania:: https://bibliotekanauki.pl/articles/2044534.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.10.Jt
81.15.Hi
68.65.Hb
68.37.Ps
Opis:: We show that post growth annealing of GaMnAs under As capping at temperatures in the range of 180-210ºC leads to significant surface modifications. Depending on GaMnAs layer thickness and composition, we obtain either a smooth continuous reacted (MnAs) surface layer or 3D islands (quantum dots). The surface modifications are due to a solid phase epitaxial process, in which Mn interstitials diffusing to the GaMnAs surface are bound with the As.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 851-858
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules
Autorzy:: Klenovský, P.
Křápek, V.
Humlíček, J.
Powiązania:: https://bibliotekanauki.pl/articles/1398560.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.La
75.75.-c
85.35.Be
68.65.Hb
Opis:: We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 μeV/325 μeV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-62-A-65
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
Autorzy:: Chwalisz, B.
Wysmołek, A.
Bożek, R.
Stępniewski, R.
Pakuła, K.
Kossacki, P.
Golnik, A.
Baranowski, J. M.
Powiązania:: https://bibliotekanauki.pl/articles/2038084.pdf
Data publikacji:: 2004-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
68.65.Hb
Opis:: We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
Źródło:: Acta Physica Polonica A; 2004, 105, 6; 517-521
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Mechanical and Electrical Properties, of ZnO-Nanowire/Si-Substrate Junctions Studied by Scanning Probe Microscopy
Autorzy:: Aleszkiewicz, M.
Fronc, K.
Wróbel, J.
Klepka, M.
Wojtowicz, T.
Karczewski, G.
Powiązania:: https://bibliotekanauki.pl/articles/2047440.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.37.Ef
68.37.Ps
68.65.La
73.21.Hb
78.67.Lt
Opis:: Scanning tunneling spectroscopy was used to check the tunneling I-V characteristics of junctions formed by n-ZnO nanowires deposited on Si substrates with n- and p-type electrical conductivity (i.e. n-ZnO nanowire/n-Si and n-ZnO nanowire/p-Si junctions, respectively). Simultaneously, several phenomena which influence the measured I-V spectra were studied by atomic force microscopy. These influencing factors are: the deposition density of the nanowires, the possibility of surface modification by tip movement (difference in attraction forces between nanowires and the p-Si and n-Si) and the aging of the surface.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 255-260
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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