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Tytuł:
Resonant Phonons in Adsorbed Slabs
Autorzy:
Dobrzynski, L.
Akjouj, A.
Syla, B.
Djafari-Rouhani, B.
Powiązania:
https://bibliotekanauki.pl/articles/1892256.pdf
Data publikacji:
1992-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
Opis:
Resonant phonons, sometimes also called leaky waves, are phonons associated with a crystal defect, a surface, an adsorbed layer and whose frequencies fall inside the bulk crystal band. Such resonant phonons were studied experimentally and theoretically before for clean surfaces and for adsorbed monolayers. We present here a study of resonant phonons associated with the adsorption of a slab of L monolayers on a substrate. With the help of a simple atomic model, we obtained a closed form expression giving the variation of the transverse phonon density of states associated with the adsorption of the slab. An application which qualitatively simulates the adsorption of L monolayers of Ge on Si shows the existence of well-defined resonant phonons within the bulk acoustic band of the substrate.
Źródło:
Acta Physica Polonica A; 1992, 81, 1; 85-90
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Time and Frequency Resolved THz Spectroscopy of Micro- and Nano-Systems
Autorzy:
Kröll, J.
Darmo, J.
Unterrainer, K.
Powiązania:
https://bibliotekanauki.pl/articles/2041637.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
Opis:
Terahertz time-domain spectroscopy is applied to characterize ultra-thin metallic layers and nanoscale composite material - single-wall carbon nanotube mat.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 92-98
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhanced Exciton-Phonon Interaction in Strained ZnCdSe/ZnSe Quantum Well Structures
Autorzy:
Godlewski, M.
Leonardi, K.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1968093.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
76.70.Hb
Opis:
Radiative recombination processes in pseudomorphic ZnCdSe/ZnSe structures are compared to those observed in strain-relaxed structures grown on GaAs substrates with thick ZnSe buffer layers. From the temperature dependence of the photoluminescence line width we evaluate the strength of exciton-phonon interaction with acoustic (dominant at lower temperatures) and optical phonons. Stronger exciton-phonon interaction is observed for pseudomorphic structures. Such enhanced exciton-phonon interaction is likely responsible for a faster photoluminescence deactivation at increased temperatures. We also report different exciton properties (photoluminescence intensity, width, strength of exciton-phonon interaction) in quantum well of a given width but in structures grown with different order of quantum wells. More stable photoluminescence (with increasing temperature) is observed for a given quantum well if it is closer to the buffer layer and not to the cap layer.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 769-773
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonradiative Recombination Processes in (CdTe,CdCrTe)/CdMgTe Quantum Well Structures
Autorzy:
Godlewski, M.
Ivanov, V.
Zakrzewski, A. J.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1968108.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
76.70.Hb
Opis:
Photoluminescence transitions in (CdTe,CdCrTe)/CdMgTe structure grown by molecular beam epitaxy are studied. Photoluminescence investigations show a very strong reduction of the photoluminescence intensity from chromium doped quantum wells. We explain this fact by a very efficient nonradiative recombination in the chromium-doped quantum wells. The present results indicate that the Auger-type energy transfer from excitons to chromium ions is responsible for the photoluminescence deactivation. The efficiency of this process is evaluated.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 781-784
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and Characterization of d.c.-Plated Nanocrystalline Nickel Deposits
Autorzy:
Szeptycka, B.
Derewnicka, D.
Powiązania:
https://bibliotekanauki.pl/articles/2035480.pdf
Data publikacji:
2002-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
68.37.Lp
68.60.-p
Opis:
The microstructure, microhardness, corrosion, and wear resistance of d.c.-plated Ni electrodeposits prepared from different types of electrolyzing Watts-type baths, without or with organic compounds, ceramic powder - SiC and polymer - polytetrafluoroethylene (PTFE), on Cu substrate, which was subsequently removed from the deposits, were investigated. With the change of the type of bath, the deposit grain size was found to decrease markedly, e.g. deposits with an average grain size of about 50 nm could be produced from a bath containing 45 g/dm$\text{}^{3}$ Ni$\text{}^{2}$+ ions, 5 g/dm$\text{}^{3}$ SiC, and 20 g/dm$\text{}^{3}$ PTFE. The surface morphology on the bath side of the electrodeposited Ni or Ni-SiC-PTFE foils was characteristic of the type of bath, and its roughness correlated well with the observed grain size. Microhardness and wear resistance increased with decreasing grain size, as expected. On discussing the factors controlling deposit grain size, it is concluded that the Ni$\text{}^{2+}$ ion content in the bath and the presence of organic compounds may have a decisive role.
Źródło:
Acta Physica Polonica A; 2002, 102, 2; 199-205
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure, Surface Morphology and Optical Properties of Thin Films of ZnS and CdS Grown by Atomic Layer Epitaxy
Autorzy:
Szczerbakow, A.
Godlewski, M.
Dynowska, E.
Ivanov, V. Yu.
Świątek, K.
Goldys, E. M.
Phillips, M. R.
Powiązania:
https://bibliotekanauki.pl/articles/1992336.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Jk
68.60.-p
81.15.Gh
Opis:
In this communication we report successful growth of monocrystalline cubic ZnS and monocrystalline and polycrystalline cubic and wurtzite films of CdS by atomic layer epitaxy. Structural and optical properties of these films are analysed. ZnS (and CdS/ZnS) films grown on GaAs substrate are cubic. Atomic layer epitaxy grown films provide several advantages over ZnS and CdS materials grown by other techniques, especially compared to bulk material, which is grown at higher temperatures. First results for ZnS/CdS/ZnS quantum well structures are also discussed.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 579-582
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Pressure Influence on the Properties of S-Phase Coatings Deposited by Reactive Magnetron Sputtering
Autorzy:
Fryska, S.
Baranowska, J.
Powiązania:
https://bibliotekanauki.pl/articles/1400448.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.-z
68.60.-p
68.60.Bs
68.55.J-
Opis:
Reactive magnetron sputtering of austenitic stainless steel in nitrogen containing atmosphere was used to deposit coatings composed of S-phase. The process was conducted at constant temperature (200°C). The influence of total and partial nitrogen pressure on coating characteristics was investigated. It was observed that both total and nitrogen partial pressures have influence on coating composition and microstructure. Increasing nitrogen content in the S-phase coating can have a beneficial effect on its corrosion characteristics. It was also found that coatings deposited in the ambient of high nitrogen contents are composed of S-phase and the additional high-nitrogen phase, which is of crucial influence on mechanical properties of the coatings. It was also found that partial argon pressure can contribute to the changes in mechanical properties of the coatings.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 854-857
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carbon Doped Austenitic Stainless Steel Coatings Obtained by Reactive Magnetron Sputtering
Autorzy:
Fryska, S.
Giza, P.
Jedrzejewski, R.
Baranowska, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402218.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
68.60.Bs
68.55.J-
81.15.-z
Opis:
The paper presents the results of investigations of carbon doped austenitic stainless steel coatings (carbon S-phase) obtained by the reactive magnetron sputtering in the reactive atmosphere composed of argon and methane as a carbon source. Stainless steel targets were sputtered under different conditions. During the experiments the argon to methane proportion varied within a range 11/2-7/6. The other parameters such as temperature, pressure, sputtering power, etc. were kept constant. The phase composition was determined using the X-ray diffraction. Electron probe microanalysis (energy dispersive spectroscopy and wavelength dispersive spectroscopy) and glow discharge optical emission spectrometry techniques were used to study element composition of the coatings. Microstructure was investigated by scanning electron microscopy. It was found that varying the methane volume in the reactive atmosphere, it is possible to control the lattice parameter of the carbon S-phase.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 879-882
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Bergman, J. P.
Monemar, B.
Kurtz, E.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1950749.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
71.35.+z
76.70.Hb
Opis:
The results of investigations of photoluminescence, time-resolved photoluminescence, photoluminescence kinetics and their temperature dependencies are discussed for two types of ZnCdSe/ZnSe multi quantum well structures - for pseudomorphic and for strain relaxed structure. Densities of 2D localized states and averaged localization energies, as seen by excitons, are determined from the photoluminescence kinetics measurements. We show distinct differences between exciton properties in two multi quantum well structures studied.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 785-788
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Characterization of CdZnSe/ZnSe Multiquantum Well System
Autorzy:
Godlewski, M.
Karpińska, K.
Bergman, J. P.
Monemar, B.
Kurtz, E.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1932081.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
71.35.+z
76.70.Hb
Opis:
Optical properties of Cd$\text{}_{x}$Zn$\text{}_{1-x}$Se/ZnSe (x = 0.12) multiquantum well system are discussed. The transient photoluminescence and optically detected cyclotron resonance experiments demonstrate a strong contribution of bound exciton emission to the low temperature photoluminescence spectra.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 209-212
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure
Autorzy:
Abdallah, B.
Al-Khawaja, S.
Powiązania:
https://bibliotekanauki.pl/articles/1401869.pdf
Data publikacji:
2015-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
47.15.gm
66.70.Df
68.60.-p
Opis:
In this paper, preferentially oriented (002) ZnO thin films have been grown on Si (100) and glass substrates using radio frequency magnetron sputtering. The dependence of the quality of the ZnO thin films at different substrate temperatures on the growth is studied. A ZnO thin film with c-axis-oriented würtzite structure is obtained at a growth temperature from 200 to 400°C. X-ray diffraction shows that the full width at half maximum θ -2θ of (002) ZnO/Si is located at approximately 34.42°, which is used to infer the grain size that is found to be 17 nm to 19.7 nm. The FWHM is 9.5° to 8° in rocking curve mode, from which the crystalline quality has been determined. The texture degree demonstrates the improvement in quality with the increase of substrate temperature, which is best at 400°C. The band gap extracted by UV transmittance spectrum has been identified as 3.2 eV at 400°C. The electrical characteristics via C-V and I-V measurements on the basis of the heterojunction thermal emission model confirm the domination of high-density grain boundary layer existing at the interface. The transport currents indicate to the presence of space-charge-limited current and trap-charge-limited current mechanisms.
Źródło:
Acta Physica Polonica A; 2015, 128, 3; 283-288
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal Expansion of Free-Volume in Hexadecane Confined in the Silica Gel Nanopores
Autorzy:
Šauša, O.
Majerník, V.
Illeková, E.
Macová, E.
Berek, D.
Powiązania:
https://bibliotekanauki.pl/articles/1196177.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
78.67.Rb
78.70.Bj
Opis:
Temperature dependence of the free-volume of voids in hexadecane (HXD) confined in the 3 nm silica gel pores (Develosil-30) was measured by positron annihilation lifetime spectroscopy. Different amount of HXD was filled into the pores of matrix. The anomalous thermal expansion was observed in the partially filled pores with extremely low filling. The thermal expansion coefficient of free-volume voids in this solidified HXD layer has a negative sign at temperatures below 180 K compared to high- or full-filled pores of silica gel. At these temperatures, the positron annihilation lifetime spectroscopy measurements demonstrate the appearance of a new type of the free volume within HXD which has been interpreted as the cracks in the HXD layer on the inner walls of matrix cavities. The differential scanning calorimetry method confirmed that the processes were enacted within pores and not on the outer surfaces of silica gel grains. In the sample with the extremely low filling, only the one HXD solidification/melting effect connected with confined states is manifested.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 798-800
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Transparent and Nanocrystalline $TiO_{2}:Nd$ Thin Films Prepared by Magnetron Sputtering
Autorzy:
Domaradzki, J.
Wojcieszak, D.
Prociow, E.
Kaczmarek, D.
Powiązania:
https://bibliotekanauki.pl/articles/1807648.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Rx
68.55.-a
68.60.-p
68.60.Dv
78.20.-e
Opis:
In this work structural and optical properties of $TiO_{2}$ thin films doped with different amount of Nd have been outlined. The result have shown that by quantity of Nd amount in the film dense nanocrystalline or amorphous thin films were obtained.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-75-S-77
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Garnet Single Crystal as Substrate Material for HTSC Films
Autorzy:
Mukhopadhyay, P.
Powiązania:
https://bibliotekanauki.pl/articles/1964306.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
68.60.-p
74.76.Bz
81.15.-z
Opis:
The use of high temperature superconductor for device application has made the compatibility of the film and substrate an important issue. Garnets having reasonably low dielectric constant and low dielectric losses can be viable low cost substrate materials for the microwave devices. Garnet single crystals like Gd$\text{}_{3}$Ga$\text{}_{5}$O$\text{}_{12}$ (GGG), Y$\text{}_{3}$Ga$\text{}_{5}$O$\text{}_{12}$ (YGG), Y$\text{}_{3}$Al$\text{}_{5}$O$\text{}_{12}$ (YAG) etc. can be potential HTSC substrate materials for microwave devices. Properties of HTSC films on some of these garnet crystals are compared here.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 147-151
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Thermal Annealing Effect on the Properties of Silver Thin Films Prepared by DC Magnetron Sputtering
Autorzy:
Hajakbari, F.
Ensandoust, M.
Powiązania:
https://bibliotekanauki.pl/articles/1186936.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.cd
81.40.-z
68.55.-a
68.60.-p
Opis:
Silver nanoparticles have potential applications in fields of nanosicence and technology. In this work, polycrystalline silver (Ag) thin films were deposited on quartz substrates by DC magnetron sputtering method at the same deposition conditions and then, the Ag films were annealed in oxygen atmosphere for 65 min at different annealing temperatures namely 300, 400, 500 and 600°C. The crystal structure of the films was evaluated by X-ray diffraction. The atomic force microscopy and scanning electron microscopy were employed for surface morphological studies of the films. Normal-incidence transmittance over the wavelength range of 200-2500 nm was measured using a spectrophotometer. The results show that the crystallization of the films increases after annealing and that the Ag films without annealing have lowest roughness. Annealing temperature effectively influences the surface morphology of the films. Optical studies reveal that the as-deposited Ag film has metallic behavior with zero transmittance and after annealing, the transmittance increases due to the formation of silver oxide phases in the films.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 680-682
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 24

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