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Wyświetlanie 1-15 z 112
Tytuł:
Analysis of Shapes of RHEED Intensity Oscillations Observed for Growing Films
Autorzy:
Mitura, Z.
Daniluk, A.
Stróżak, M.
Jalochowski, M.
Smal, A.
Subotowicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/1890913.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.-x
68.55.-a
Opis:
A new method of analysing shapes of RHEED intensity oscillations observed during epitaxial growth of ultrathin films is presented. The intensity of the specular electron beam is computed by solving the one-dimensional Schrödinger equation. The method can be used for interpreting data collected at very low glancing angle (< 1°) of the incident electron beam. In the paper we show numerically determined shapes of the intensity oscillations for different cases of settling of atoms at surfaces of growing films.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 365-368
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pulsed Laser Evaporation and Epitaxy
Autorzy:
Dubowski, J.J.
Powiązania:
https://bibliotekanauki.pl/articles/1888083.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
78.65.Fa
Opis:
The application of pulsed lasers for vaporization (ablation) of solid targets appears to be the most natural way to produce high purity fluxes of atoms/ions suitable for epitaxial growth of thin films. Since the early 1960's this unique approach has been the subject of steadily growing interest in the deposition of metals, dielectrics, semiconductors and since 1987, high-T$\text{}_{c}$ superconductors. Laser induced target surface morphology changes, properties of laser induced vapours and pulsed deposition rate associated with the use of a pulsed laser for vacuum epitaxy are discussed. A pulsed laser evaporation and epitaxy (PLEE) system is described and the results of PLEE application for the growth of Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te and CdTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te quantum well and superlattice structures are reviewed. Feasibility of PLEE in bandgap engineering is also discussed.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 221-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport and Magnetic Properties of Rare Earth Compounds Epitaxially Grown on Semiconductors
Autorzy:
Chroboczek, Jan
Powiązania:
https://bibliotekanauki.pl/articles/1888050.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
68.55.-a
75.50.Pp
Opis:
Growth, crystallographic structure, electrical transport and magnetic properties of cubic Er pnictides and hexagonal Er silicide layers, epitaxially grown on semiconductors, are reviewed. Magnetoresistance anomalies observed at low temperatures are discussed in terms of a model developed for electron-magnetic moment interactions in antiferromagnetic systems.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 179-192
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Surface Orientation of the Substrate on the Saturation State of Solution during Liquid Phase Heteroepitaxy
Autorzy:
Olchowik, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1921670.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
Orientation effects during heteroepitaxy appear at the stage of the layer formation and also during the isothermal contact of the multicomponent solution with the binary substrate. In the paper, the analysis of the InP and GaP substrate orientation on the state of liquid phase was carried out. The analysis based on the in situ comparative determination of the contact supersaturation of the Ga-In-P-As and Ga-In-P solutions. It was found that the contact supersaturation of the alloy was connected with the coupling mechanism of the interface with the binary substrate.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 745-748
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
RHEED Intensity Oscillations During the Growth of Indium Ultrathin Films
Autorzy:
Stróżak, M.
Jałochowski, M.
Subotowicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/1892482.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.-x
68.55.-a
Opis:
The ultrathin high-purity single-crystal indium films with atomically flat surfaces, and precisely known thicknesses in UHV conditions were prepared These films were deposited on the Si(111)-(7×7) and Si(111)-(6×6)Au substrate cooled to temperatures up to 110 K. The growth of the indium films was studied by. reflection high-energy electron diffraction (RHEED). Pronounced specular beam intensity oscillations are found. The consequences for the understanding of RHEED intensity oscillations and of the growth of ultrathin films are discussed. The amplitude of the RHEED specular beam intensity oscillations as a function f the polar angle and temperature substrate Si was measured.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 239-245
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Very Thin Silver Layer Growth on the Cu(1II) Face at Different Temperatures
Autorzy:
Mróz, S.
Stachnik, B.
Powiązania:
https://bibliotekanauki.pl/articles/1892480.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.-p
68.55.-a
Opis:
Measurements of work function changes (ΔΦ) and Auger Electron Spectroscopy were used for investigation of very thin silver layer adsorption on the (111) face of copper crystal. At room temperature the layer-by-layer growth was observed while at temperatures above 850 K ΔΦ and the Auger peak height kinetics indicated the presence of silver diffusion to the surface layer of the copper sample.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 233-238
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calcul des contraintes dans une couche mince deposee sur un substrat
Autorzy:
Bertholon, G.
Dupuy, C.
Surry, C.
Redon, R.
Zahouani, H.
Powiązania:
https://bibliotekanauki.pl/articles/1929268.pdf
Data publikacji:
1993-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
CALCULATIONS OF THE CONSTRAINTS IN A THIN FILM DEPOSITED ON THE SUBSTRATE: The aim of the present paper is to give simple calculations of the constraints in a thin film deposited on the substrate. The thin film can be obtained by the recrystallization of the surface. It is considered in relation to its substrate, where the force is linearly proportional to the surface area of the film. On the other hand, it is considered to be under the action of a force related to the thermic and compressional constraints. The initial and final boundary conditions in the linearized model play an essential role in the model adopted.
Źródło:
Acta Physica Polonica A; 1993, 83, 5; 581-585
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth
Autorzy:
Berger, H.
Möck, P.
Rosner, B.
Powiązania:
https://bibliotekanauki.pl/articles/1929560.pdf
Data publikacji:
1993-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
68.65.+g
Opis:
The effect of epitaxial misorientation on substrates having vicinal surfaces is studied using two simple geometrical models. The misorientations in two epitaxial systems, single layers and superlattices, can be partially explained by means of these models. Furthermore, the fundamentals of a new description tool for orientation relationships of epitaxial systems are outlined briefly, and two examples of application are given.
Źródło:
Acta Physica Polonica A; 1993, 84, 2; 279-286
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray and Electron-Optical Characterization of ZnTe/CdTe and ZnTe/GaAs Epitaxial Layers Obtained by the MBE Method
Autorzy:
Auleytner, J.
Dziuba, Z.
Górecka, J.
Pełka, J.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/1931657.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
61.10.-i
68.55.-a
Opis:
X-ray diffraction topography (Bragg diffraction) and X-ray rocking curve measurements were used to study the perfection and structural properties of ZnTe epitaxial layers on the CdTe and GaAs substrates. ZnTe epitaxial layers on CdTe were grown by MBE method by using a machine made in the Institute of Physics of the Polish Academy of Sciences. The ZnTe layers on GaAs were produced on the other, factory-made MBE system. The comparison between the X-ray topographical images of the substrate and epitaxial layer shows that imperfections on the substrate surface cause imperfections in the epitaxial layer. The results of double-crystal diffractometry measurements show that the perfection of the layer on the GaAs substrate is higher than that on the CdTe. The presence of microtwining in the ZnTe layer on the CdTe substrate was confirmed by RHEED measurements. The X-ray standing wave fluorescent spectra were also measured for the samples.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 567-574
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of Synchrotron Radiation to the Atomic and Electronic Structure of Semiconductors
Autorzy:
Altarelli, M.
Powiązania:
https://bibliotekanauki.pl/articles/1931851.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.-a
78.70.Ck
Opis:
A brief review of the main experimental techniques exploiting synchrotron radiation in semiconductor physics is attempted. Topics emphasized include the study of surface and interface phenomena, such as surface structural properties (e.g. surface reconstruction) by X-ray diffraction, surface dynamical properties (e.g. adsorbate vibrational amplitudes) by the X-ray standing waves technique, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many experimental techniques applicable to research in semiconductor physics. Examples of experiments made possible by the so-called "third generation", high-brilliance synchrotron sources are presented.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 17-24
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
Autorzy:
Bożek, R.
Babiński, A.
Baranowski, J. M.
Stępniewski, R.
Klusek, Z.
Olejniczak, W.
Starowieyski, K.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934054.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
68.55.-a
Opis:
We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 974-976
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures
Autorzy:
Jezierski, K.
Sitarek, P.
Misiewicz, J.
Panek, M.
Ściana, B.
Korbutowicz, R.
Tłaczała, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933782.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
71.35.+z
Opis:
Photoreflectance spectra were measured at room temperature for energies in the vicinity of the E$\text{}_{0}$ critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the existence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and interface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 751-754
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Study of GaN
Autorzy:
Zhang, X.
Kung, P.
Saxler, A.
Walker, D.
Wang, Τ.
Razeghi, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933686.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
71.55.Eq
68.55.-a
Opis:
Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Al$\text{}_{2}$O$\text{}_{3}$ (100), (111)Si, and (00.1)6H-SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant-related emissions from doped samples were observed. Deep-level yellow emission centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with optimum Ga source flow and doped GaN. The experiment data strongly suggest that Ga vacancies are the origin this deep-level emission.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 601-606
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Processes Occurring during Silver Adsorption on Copper and Nickel at Elevated Temperatures
Autorzy:
Wodecki, J.
Mróz, S.
Powiązania:
https://bibliotekanauki.pl/articles/1943977.pdf
Data publikacji:
1996-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.-p
68.55.-a
Opis:
A flux of silver atoms reevaporated from the copper and nickel targets during deposition of silver was measured as a function of the target temperature during spontaneous cooling from 1150 K and during heating the target with deposited several silver monolayers from room temperature to 1150 K. Differences in the measured dependences for both targets give the evidence of competition between reevaporation of silver atoms from the copper surface and their dissolution in the copper bulk and are in accordance with the lack of silver dissolution in nickel. Thus, the role of silver dissolution in the copper surface layer during silver adsorption at elevated temperatures is experimentally evidenced. Activation energy for silver dissolution in the copper substrate was estimated to be equal to 1.7-2.4 eV/atom.
Źródło:
Acta Physica Polonica A; 1996, 89, 1; 69-74
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Resolution X-ray Reciprocal Space Mapping
Autorzy:
Bauer, G.
Li, J. H.
Holy, V.
Powiązania:
https://bibliotekanauki.pl/articles/1943985.pdf
Data publikacji:
1996-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
68.55.-a
61.72.Lk
Opis:
A survey will be given on recent advances in the investigation of semiconductor epilayers, heterostructures and superlattices using reciprocal space mapping techniques based on triple-axis diffractometry. It is shown that X-ray reciprocal space mapping yields quantitative information on strain, strain relaxation, as well as composition in such structures. These data are obtained from analyses of the isointensity contours of scattered X-ray intensity around reciprocal lattice points. Further analysis of the diffuse scattering yields also information on defect distribution in the epilayers.
Źródło:
Acta Physica Polonica A; 1996, 89, 2; 115-127
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 112

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