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Wyświetlanie 1-10 z 112
Tytuł:
Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs
Autorzy:
Buda, B.
Leifeld, O.
Völlmeke, S.
Schmilgus, F.
As, D. J.
Schikora, D.
Lischka, K.
Powiązania:
https://bibliotekanauki.pl/articles/1952466.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
We investigated the GaAs/ZnSe interface and the influence of the Ga$\text{}_{2}$Se$\text{}_{3}$ formation at the GaAs/ZnSe interface on the relaxation of the ZnSe epilayer using reflection high-energy electron diffraction, atomic force microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs substrate with hydrogen excited in a plasma source and a higher critical thickness of GaAs(001)/ZnSe due to the suppression of Ga$\text{}_{2}$Se$\text{}_{3}$ at the surface was observed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 997-1001
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Surface Orientation of the Substrate on the Saturation State of Solution during Liquid Phase Heteroepitaxy
Autorzy:
Olchowik, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1921670.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
Orientation effects during heteroepitaxy appear at the stage of the layer formation and also during the isothermal contact of the multicomponent solution with the binary substrate. In the paper, the analysis of the InP and GaP substrate orientation on the state of liquid phase was carried out. The analysis based on the in situ comparative determination of the contact supersaturation of the Ga-In-P-As and Ga-In-P solutions. It was found that the contact supersaturation of the alloy was connected with the coupling mechanism of the interface with the binary substrate.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 745-748
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Argon on the Deposition and Structure of Polycrystalline Diamond Films
Autorzy:
Benzhour, K.
Szatkowski, J.
Rozpłoch, F.
Stec, K.
Powiązania:
https://bibliotekanauki.pl/articles/1535896.pdf
Data publikacji:
2010-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.A-
Opis:
Thin polycrystalline diamond films were deposited on prepared (100) Si substrate by hot filament chemical vapor deposition using a mixture of hydrogen, propane-butane and argon. During investigations the gas flow of argon was varied from 100 sccm to 400 sccm. Scanning electron microscopy analysis revealed that the addition of argon to the gas phase influenced the growth rate and film structure. An increase of argon concentration provokes an increase in film porosity and decrease in crystalline facetting. The quality of these films was investigated with the use of the Raman spectroscopy.
Źródło:
Acta Physica Polonica A; 2010, 118, 3; 447-449
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Atomic Force Microscopy Studies of the Surface Scale Formed During Oxidation of Incoloy Ma956
Autorzy:
Czyrska-Filemonowicz, A.
Wasilkowska, A.
Szot, K.
Quadakkers, W. J.
Powiązania:
https://bibliotekanauki.pl/articles/1968770.pdf
Data publikacji:
1998-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
The formation of thin oxide films on {111} and {110} single crystal specimens of Fe20Cr5Al based oxide dispersion strengthened alloy during the early stages of oxidation up to 1000°C was investigated by atomic force microscopy. The atomic force microscopy results revealed the crystalline character of a corrosion layer. The alumina scale morphology (height and grain size of crystallites) was only slightly dependent on the crystallographic texture of the underlying bulk material. The results show that atomic force microscopy has the potential to study surface structure of oxide layers in the initial stages of an oxidation process.
Źródło:
Acta Physica Polonica A; 1998, 93, 2; 399-402
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of $Cu_2ZnSnS_4$ Thin Films
Autorzy:
Sun, Y.
Yao, B.
Meng, X.
Wang, D.
Long, D.
Hua, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1205220.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
Amorphous Cu-Zn-Sn-S precursor films were prepared by sol-gel and spin-coating with copper chloride, zinc chloride, tin chloride and thiourea solutions as starting materials. A $Cu_2ZnSnS_4$ film with kesterite structure and a small amount of chlorine formed when the precursor was annealed under Ar ambient at temperature above 200°C, but its atomic ratios of Cu:Zn:Sn:S far deviated from stoichiometric ratios of the $Cu_2ZnSnS_4$. However, when the precursor films were annealed with sulfur powder together at temperatures between 360 and 480°C, the CZTS film containing a very small amount of Cl formed, and its atomic ratio change little for Cu, Zn, and Sn, increases for S and decreases for Cl with increasing temperature. When the temperature is 480°C, a CZTS only has Cu, Zn, Sn, and S element is fabricated, and the atomic ratio of Cu:Zn:Sn:S is near the stoichiometric ratio. The bandgap of the CZTS decreases with increasing annealing temperature. The mechanisms of the formation and the properties of the CZTS are suggested in the present work.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 751-756
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calcul des contraintes dans une couche mince deposee sur un substrat
Autorzy:
Bertholon, G.
Dupuy, C.
Surry, C.
Redon, R.
Zahouani, H.
Powiązania:
https://bibliotekanauki.pl/articles/1929268.pdf
Data publikacji:
1993-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
CALCULATIONS OF THE CONSTRAINTS IN A THIN FILM DEPOSITED ON THE SUBSTRATE: The aim of the present paper is to give simple calculations of the constraints in a thin film deposited on the substrate. The thin film can be obtained by the recrystallization of the surface. It is considered in relation to its substrate, where the force is linearly proportional to the surface area of the film. On the other hand, it is considered to be under the action of a force related to the thermic and compressional constraints. The initial and final boundary conditions in the linearized model play an essential role in the model adopted.
Źródło:
Acta Physica Polonica A; 1993, 83, 5; 581-585
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Epitaxial Growths of II-VI Compounds on (110) Substrates
Autorzy:
Cywiński, G.
Wojtowicz, T.
Kopalko, K.
Karczewski, G.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1969044.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
We studied epitaxial growth conditions of II-VI semiconductors on (110) substrates, which is indispensable for fabrication of T-shaped quantum wire structures. We experimented with different types of (110)-oriented substrates and monitored the surface quality of deposited layers in situ by reflection high energy electron diffraction and ex situ by photoluminescence. The aim of this work is to find optimum growth conditions of II-VI compounds on a cleaved edge of a superlattice as required by the overgrowth method.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 281-284
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Lattice Strains in Layered Structures Containing Porous Silicon
Autorzy:
Wierzchowski, W.
Wieteska, K.
Graeff, W.
Brzozowski, A.
Nossarzewska-Orłowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/2035501.pdf
Data publikacji:
2002-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterisation included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidising and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of the investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton.
Źródło:
Acta Physica Polonica A; 2002, 102, 2; 283-288
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of Composition of Surfaces and Interfaces with the Use of Auger Electron Spectroscopy
Autorzy:
Mróz, S.
Powiązania:
https://bibliotekanauki.pl/articles/1945166.pdf
Data publikacji:
1996-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.-p
68.55.-a
Opis:
Processes leading to the Auger electron emission from the sample bombarded with a primary electron beam are discussed. It is shown that every element has its characteristic spectrum of Auger lines, and that owing to a small inelastic mean free path of Auger electrons, information obtained from Auger electron spectroscopy concerns the composition of surface layer of 0.5-1 nm thick. Experimental methods of Auger electron spectroscopy are presented together with problems connected with separation of Auger electrons from the secondary electron spectrum. Advantages and disadvantages of some electron energy spectrometers are considered. Methods of quantitative Auger analysis of homogeneous samples with the use of standards and catalogues of Auger spectra are presented. The role of matrix corrections in quantitative Auger analysis is discussed. Problems arising in Auger analysis of insulating samples are considered and methods of discharging of such samples are presented. Depth profiling of inhomogeneous samples by Auger electron spectroscopy with ion bombardment sputtering is described, and possibilities and limitations of this procedure are discussed. Principles of scanning Auger microscopy are presented. Factors determining the lateral resolution are discussed. Possibilities of Auger electron spectroscopy and scanning Auger microscopy in analysis of composition of grain boundaries exposed by in situ fracture are presented and discussed. Possibilities and limitations of Auger electron spectroscopy in the investigation of solid state surfaces are summarized.
Źródło:
Acta Physica Polonica A; 1996, 89, 2; 183-193
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Processes Occurring during Silver Adsorption on Copper and Nickel at Elevated Temperatures
Autorzy:
Wodecki, J.
Mróz, S.
Powiązania:
https://bibliotekanauki.pl/articles/1943977.pdf
Data publikacji:
1996-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.-p
68.55.-a
Opis:
A flux of silver atoms reevaporated from the copper and nickel targets during deposition of silver was measured as a function of the target temperature during spontaneous cooling from 1150 K and during heating the target with deposited several silver monolayers from room temperature to 1150 K. Differences in the measured dependences for both targets give the evidence of competition between reevaporation of silver atoms from the copper surface and their dissolution in the copper bulk and are in accordance with the lack of silver dissolution in nickel. Thus, the role of silver dissolution in the copper surface layer during silver adsorption at elevated temperatures is experimentally evidenced. Activation energy for silver dissolution in the copper substrate was estimated to be equal to 1.7-2.4 eV/atom.
Źródło:
Acta Physica Polonica A; 1996, 89, 1; 69-74
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-10 z 112

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