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    Wyświetlanie 1-4 z 4
    Tytuł:
    Advanced Characterization of Material Properties on the Nanometer Scale Using Atomic Force Microscopy
    Autorzy:
    Fenner, M.
    Wu, S.
    Yu, J.
    Huber, H.
    Kienberger, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1490089.pdf
    Data publikacji:
    2012-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.-g
    07.79.-v
    68.37.Ps
    68.37.Uv
    07.57.Pt
    Opis:
    We report recent advances in material characterization on the nanometer scale using scanning microwave microscopy. This combines atomic force microscopy and a vector network analyzer using microwave tip sample interaction to characterize dielectric and electronic material properties on the nanometer scale. We present the methods for calibration as well as applications. Scanning microwave microscopy features calibrated measurements of: (1) capacitance with attofarad sensitivity. For calibration a well characterized array of capacitors (0.1 fF to 10 fF) is used. The method is applied to determine the dielectric properties of thin organic films, (2) Semiconductor dopant density. Calibration is performed by imaging the cross-section of a standard sample with differently doped layers (dopant stair case) from $10^{16}$ atoms/$cm^3$ to $10^{20}$ atoms/$cm^3$.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 2; 416-419
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams
    Autorzy:
    Tsvetkova, T.
    Takahashi, S.
    Sellin, P.
    Gomez-Morilla, I.
    Angelov, O.
    Dimova-Malinovska, D.
    Zuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503892.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    41.75.Ak
    42.70.Ln
    68.37.Uv
    73.61.Jc
    Opis:
    Topographic and optical patterns have been fabricated in a-SiC films with a focused high-energy (1 MeV) $H^{+}$ and $He^{+}$ ion beam and examined with near-field techniques. The patterns have been characterized with atomic force microscopy and scanning near-field optical microscopy to reveal local topography and optical absorption changes as a result of the focused high-energy ion beam induced modification. Apart of a considerable thickness change (thinning tendency), which has been observed in the ion-irradiated areas, the near-field measurements confirm increases of optical absorption in these areas. Although the size of the fabricated optical patterns is in the micron-scale, the present development of the technique allows in principle writing optical patterns up to the nanoscale (several tens of nanometers). The observed values of the optical contrast modulation are sufficient to justify the efficiency of the method for optical data recording using high-energy focused ion beams.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 56-59
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Nitrogen Plasma Afterglow on Amorphous Carbon Nitride Thin Films Deposited by Laser Ablation
    Autorzy:
    Alkhawwam, A.
    Abdallah, B.
    Kayed, K.
    Alshoufi, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1493712.pdf
    Data publikacji:
    2011-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    82.33.Xj
    81.15.Fg
    78.30.Jw
    68.49.Uv
    68.37.Ps
    68.37.Hk
    Opis:
    By employing pulsed laser deposition, amorphous carbon nitride $(a-CN_{x})$ thin films, were prepared on unheated Si (100). Investigation of compositional and structural modifications induced by microwave nitrogen plasma afterglow on amorphous carbon nitride thin films, has been carried out in the range of nitrogen pressure 10-1000 Pa. The role of nitrogen plasma afterglow on the physicochemical and structural characteristics of a-$CN_{x}$ was explored using the diagnostic techniques: Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Upon analyzing the Raman and X-ray photoelectron spectra, it is concluded that employing nitrogen plasma afterglow during the films deposition favors, in general, the increase in nitrogen content and the formation of $sp^2$ bonding in the a-$CN_{x}$ films. The analysis of scanning electron and atomic force microscopy images demonstrated that the films had a granular structure formed from particles coalesced together into cauliflower-like clusters and the particles size increased by increasing nitrogen pressure. A 2D atomic force microscopy line profile measurements provide evidence to a decrease in size of clusters using nitrogen plasma afterglow which could be due to the annihilation of excess vacancies and/or the elimination of grain boundaries. These analyses were found to be quite reliable to help understand the effects of microwave nitrogen plasma afterglow on amorphous carbon nitride thin films.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 3; 545-551
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanostructured Iron-Substituted Lithium-Manganese Spinel as an Electrode Material for Hybrid Electrochemical Capacitor
    Autorzy:
    Lisovsky, R.
    Ostafiychuk, B.
    Budzulyak, I.
    Kotsyubynsky, V.
    Boychuk, A.
    Rachiy, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030917.pdf
    Data publikacji:
    2018-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Hk
    73.63.Bd
    82.45.Yz
    82.47.Uv
    82.47.Wx
    84.32.Tt
    Opis:
    Structure, morphology and electrochemical properties of iron substituted lithium manganese spinel were investigated. The cyclic capability of obtained materials in aqueous electrolyte was studied. The kinetic characteristics of Li⁺-ions charge-discharge intercalation were determined.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 4; 876-878
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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