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Wyświetlanie 1-15 z 28
Tytuł:
Application of Synchrotron Radiation to the Atomic and Electronic Structure of Semiconductors
Autorzy:
Altarelli, M.
Powiązania:
https://bibliotekanauki.pl/articles/1931851.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.-a
78.70.Ck
Opis:
A brief review of the main experimental techniques exploiting synchrotron radiation in semiconductor physics is attempted. Topics emphasized include the study of surface and interface phenomena, such as surface structural properties (e.g. surface reconstruction) by X-ray diffraction, surface dynamical properties (e.g. adsorbate vibrational amplitudes) by the X-ray standing waves technique, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many experimental techniques applicable to research in semiconductor physics. Examples of experiments made possible by the so-called "third generation", high-brilliance synchrotron sources are presented.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 17-24
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative Studies of Surface Roughness of Thin Epitaxial Si Films by Computer Simulations and Experimental X-Ray and Optical Methods
Autorzy:
Żymierska, D.
Auleytner, J.
Domagała, J.
Szewczyk, A.
Dmitruk, N.
Powiązania:
https://bibliotekanauki.pl/articles/1964181.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ci
68.35.Bs
61.10.Dp
Opis:
The paper presents investigations of the surface roughness of epitaxial silicon films obtained by chemical vapour deposition with chloric and MOCVD processes. The flat surfaces of films and chemically etched surfaces of substrates were studied by optical methods as well as by X-ray reflectivity at grazing incidence. The computer simulations based on Fresnel theory were compared with the experimental results.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1025-1030
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystallization of Amorphous Ribbon Observed by Means of Scanning Tunneling Microscope
Autorzy:
Witek, A.
Reich, A.
Raułuszkiewicz, J.
Zych, W.
Powiązania:
https://bibliotekanauki.pl/articles/1929178.pdf
Data publikacji:
1993-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.Jk
75.50.Kj
Opis:
Surfaces of amorphous ribbon Fe70V10 B20 were observed by means of the scanning tunneling microscope before and after the annealing in vacuum. The topographic images of the air-side surfaces after annealing are similar in the x-y plane and different in the z-direction. From the scanning tunnelling microscope images some information on the crystallization of amorphous ribbons can be deduced.
Źródło:
Acta Physica Polonica A; 1993, 83, 4; 463-467
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystallography of Boundaries and Interfaces
Autorzy:
Neumann, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945170.pdf
Data publikacji:
1996-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Jk
68.35.Bs
Opis:
The main crystallographic concepts of characterizing interface structures are treated and reviewed. It will be demonstrated in which way the approaches of interface crystallography can be used to analyse interface structures experimentally observed.
Źródło:
Acta Physica Polonica A; 1996, 89, 2; 195-207
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defects in Detwinned LaGaO$\text{}_{3}$ Substrates
Autorzy:
Mazur, K.
Fink-Finowicki, J.
Berkowski, M.
Schell, N.
Powiązania:
https://bibliotekanauki.pl/articles/1964373.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Mm
68.35.Bs
Opis:
Single crystals of lanthanum gallate would be the suitable substrate for YBaCuO films except for the phase transition and the tendency to twinning existing in this material. However, by appropriate choice of growth conditions in the Czochralski method, it is possible to grow single crystal of LaGaO$\text{}_{3}$ with low density of twin boundaries. Special stress and temperature treatment can then be applied to such materials to remove majority of existing twins. The substrates were examined by X-ray topography before and after detwinning and the surface was scanned with a profilometer.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 205-208
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of Surface Roughness by Grazing Incidence X-ray Reflectivity
Autorzy:
Żymierska, D.
Powiązania:
https://bibliotekanauki.pl/articles/1945234.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Dp
68.35.Bs
78.20.Ci
Opis:
The paper presents theoretical calculations of grazing incidence X-ray reflectivity curves for iron and nickel crystals. The computer simulations based on Fresnel theory take into account damping (as the result of surface roughness), which is different from the usual Rayleigh damping. The calculations are performed for a wide range of wavelengths and roughness and also for different distribution of roughness on the surface.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 347-352
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deterministic Periodical and Quasiperiodical Surfaces of III-V Compounds: Preparation, Investigations and Applications
Autorzy:
Dmitruk, N. L.
Mayeva, O. I.
Yastrubchak, O. B.
Beketov, G. V.
Powiązania:
https://bibliotekanauki.pl/articles/1969052.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
73.40.Ns
78.30.Fs
Opis:
Autocorrelation functions for rough (random, quasiperiodical and deterministicperiodical) surfaces are deduced from the surface profiles determined by using the line-by-line analysis of atomic force microscopy images. It is shown that the initial parts of autocorrelation functions have a Gaussian form. An attempt to use the concept of fractal as a bridge between deterministic periodic and random (spontaneous) surfaces including quasiperiodic ones have been made.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 285-290
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth Morphology and Atomic Surface Topology by Hartman-Perdok Analysis: Application to ABCO$\text{}_{4}$ and YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$
Autorzy:
Woensdregt, C. F.
Powiązania:
https://bibliotekanauki.pl/articles/1964232.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Aj
68.35.-p
68.35.Bs
Opis:
The Hartman-Perdok theory explains the relation between crystal structure and morphology and provides the atomic surface topology of the crystal-melt interface. Hartman-Perdok theory has been applied to CaYAlO$\text{}_{4}$ as model for all other ABCO$\text{}_{4}$ compounds with a K$\text{}_{2}$NiF$\text{}_{4}$ crystal structure. F forms are {002}, {101}, {103}, {110}, {112}, {200}, {211} and {213}. The strongly anisotropic shape caused by the perovskite-like AlO$\text{}_{6}$ layers || {001} is very distinct in all theoretical growth forms. The form with formal charges is planar following {001} with {101} and {110} as lateral forms. Disordering of the boundary ions results in the disappearance of {110}. At lower effective charge on oxygen ions, q$\text{}_{O}$, the ordered forms are still tabular, while {110} and {112} are the only lateral faces. At still lesser negative q$\text{}_{O}$ {112} appears as well. On the disordered models {112} replaces {110}. Crystals show often variations in colour parallel to the {110} interface due to the surface topology of {110}. YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$ has, for x=1, the following F forms: {001}, {101}, {103}, {112} and {114}. The theoretical growth form of this tetragonal phase is tabular following {001} with {101} as lateral form. For x=0 the growth form shows important {101} and minor {103} and {001}. When the boundary ions on (001) are ordered, the outermost layer of {001} contains half of the Cu$\text{}^{+}$ (x=1) or Cu$\text{}^{3+}$ and O$\text{}^{2-}$ (x=0) ions in a c(2×2) quadratic lattice which reduces the {001} growth rate significantly. An (1×2) reconstructed {010} surface can be traced for the orthorhombic polymorph which results into the appearance of {010} on the ordered growth form. Otherwise the presence of {010} on as-grown crystals must be due to external factors.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 35-46
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Quality (100) and (001) Oriented Substrates Prepared from Czochralski Grown SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ Single Crystals
Autorzy:
Berkowski, M.
Fink-Finowicki, J.
Sass, J.
Mazur, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964370.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.50.Ks
68.35.Bs
Opis:
The growth of SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ crystals on ⟨100⟩ and ⟨001⟩ oriented seeds was investigated. Various defects, which appeared in crystals grown on these two orientations, were observed in polarized light and by X-ray diffraction topography. It was found that to obtain a substrate of the best quality, the crystal should be cut along the growth directions. Therefore, crystals pulled along ⟨100⟩ direction are utilized for preparation of (001) substrates, whereas (100) substrates are better to cut from crystals grown on ⟨001⟩ seed. The quality of the prepared substrates was determined by high resolution X-ray diffraction study in terms of rocking curve and mean mosaic angle.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 201-204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Etching Effects Occurring in Secondary Ion Mass Spectrometry Depth profiling of InGaAs/InP and InGaAs/AlAs/InP MBE Grown Heterostructures
Autorzy:
Kozhukhov, A. V.
Konarski, P.
Herman, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/1952035.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.Jk
Opis:
Depth profiling analysis of In$\text{}_{x}$Ga$\text{}_{1-x}$As heterolayers grown by MBE on Fe doped InP(100) substrates was performed in the SAJW-02 secondary ion mass spectrometry analyser equipped with 4.5 keV O$\text{}_{2}^{+}$ ion source and a specially designed sample manipulator enabling depth profiling in the standard as well as in so-called Zalar rotation operation modes. The fairly high energy of the primary ion beam required for sputtering in secondary ion mass spectrometry measurements causes changes in surface topography, usually of different origin. Depth resolution parameters and roughness formation monitored by scanning electron microscopy were analysed for a set of samples with composition x changing in the range 0.33 to 0.60. The results were compared with the same data for a layer of x=0.53 (best lattice-matched to InP) grown on the top of a three monolayer thick AlAs film deposited previously on the InP substrate. Improvement in the depth profile resolution was revealed for the structure with an AlAs layer indicating sharper interface transition. Moreover, sample rotation applied for this structure improves further the depth profiling resolution. Thus, we showed for the first time that a very thin AlAs layer grown by MBE between the InP substrate and the In$\text{}_{0.53}$Ga$\text{}_{0.47}$As improves considerably the heterointerface properties and that Zalar rotation applied for depth profiling of the investigated material system diminishes further the negative effects of ion etching on depth resolution in secondary ion mass spectrometry analysis.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 869-874
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Models for the Interpretation of the Different Interfaces Sb/InP(I00) Using Quantitative Results of AES and EELS
Autorzy:
Gruzza, B.
Porte, A.
Bideux, L.
Jardin, C.
Miloua, J.
Powiązania:
https://bibliotekanauki.pl/articles/1892478.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.35.Fx
72.80.Ey
82.80.Pv
Opis:
The model of quantitative interpretation of Auger electron spectroscopy (AES) results is described and some complementary electron energy loss spectroscopy (EELS) results are also reported. It is shown that the InP(100) surfaces perturbed by the Ar$\text{}^{+}$ cleaning treatment can be ordered by Sb deposition. The variations of different Auger lines are interpreted, and the transformations 3D → 2D of the initially formed In clusters can be well-followed during the first stages of the deposition.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 223-231
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Near Field Optical Microscopy and Spectroscopy with STM and AFM Probes
Autorzy:
Bergossi, O.
Bachelot, R.
Wioland, H.
Wurtz, G.
Laddada, R.
Adam, P. M.
Bijeon, J. L.
Royer, P.
Powiązania:
https://bibliotekanauki.pl/articles/1968764.pdf
Data publikacji:
1998-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.60.Pb
42.62.Fi
61.16.Ch
68.35.Bs
Opis:
This article deals with a new generation of scanning near field optical microscopes (SNOM), called apertureless SNOM, based on metallic, semi-conductive or dielectric probes. The classification of the apertureless probe among the usual SNOM probes is discussed in the first part. Then, we present the different apertureless SNOM configurations that we develop, with various commercial AFM and home-made tungsten tips, and several illumination and collection modes. Finally, after a preliminary result in near field imaging, we propose a promising application of such microscopes dedicated to the near field fluorescence spectroscopy.
Źródło:
Acta Physica Polonica A; 1998, 93, 2; 393-398
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nucleation and Crystal Growth of Cu on Ir Tips Under Ultra-High Vacuum and in the Presence of Oxygen
Autorzy:
Zuber, S. M.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2013288.pdf
Data publikacji:
2000-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.Fk
81.15.Ef
68.35.Bs
Opis:
Results concerning the morphology of Cu adsorption layers deposited from vapor under ultrahigh vacuum on Ir tip and the influence of oxygen on this morphology are reported. The method employed was field electron emission microscopy. It was found that the presence of oxygen decreases the copper wettability of iridium. Preadsorption of oxygen on the Ir surface is followed by an increase in cohesion interaction between atoms of the Cu deposited onto the tip at room temperature. Coadsorption of Cu and O on the Ir tip surface at liquid nitrogen temperature, when followed by gradually heating the adlayer, results in crystallization of the deposit in the temperature range from 430 K to about 700 K. Some evidence indicates the formation of Cu$\text{}_{2}$O with a high degree of crystallinity under these conditions. Cu and O coadsorption on the Ir surface at a temperature higher than 1090 K leads to selective accumulation of Cu on the {111} faces and to formation of epitaxial crystals which are oriented to the substrate in the same manner as the Cu crystals grown at ultra-high vacuum from Cu flux containing no oxygen. Oxygen incorporated into the Cu beam interact preferentially with {011} and {001} Ir faces, where it can produce oxide layers.
Źródło:
Acta Physica Polonica A; 2000, 97, 4; 681-692
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Nickel Hydroxide Layer on Ni Electrode by in situ Atomic Force Microscopy
Autorzy:
Kowal, A.
Niewiara, R.
Perończyk, B.
Haber, J.
Powiązania:
https://bibliotekanauki.pl/articles/1945263.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
Opis:
The layer of nickel hydroxide was formed on the surface of polycrystalline Ni immersed in 1 M KOH by cycling the potential in the range between -0.1 and 0.6 V vs. Pt in 1 M KOH. The layer thickness of 8.5 nm, estimated by an electrochemical method, corresponded to about 10 monolayers of Ni(OH)$\text{}_{2}$. The changes of thickness of the nickel hydroxide film during the process of its oxidation and reduction were monitored by the use of in situ atomic force microscopy with the tip fixed and the electrode potential scanned between -0.1 and +0.6 V at a scan rate of 100 mV/s. The process of oxidation resulted in the film thickness decrease by about 3 nm. This change could be explained as to be due to the removal of a proton from Ni(OH)$\text{}_{2}$ layer.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 401-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties and Photoemission of Microrelief Surfaces of III-V Semiconductors
Autorzy:
Dmitruk, N. L.
Mamikin, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/1931741.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
68.35.Bs
78.30.Fs
Opis:
The optical properties (infrared reflectance) and the photoemission current for the surface-barrier structures of metal-semiconductor type with microrelief interface have been investigated. The participation of surface plasmon polaritons in internal photoemission of the Au-GaAs Schottky barriers has been observed.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 811-815
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 28

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