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Wyświetlanie 1-15 z 28
Tytuł:
Application of Synchrotron Radiation to the Atomic and Electronic Structure of Semiconductors
Autorzy:
Altarelli, M.
Powiązania:
https://bibliotekanauki.pl/articles/1931851.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.-a
78.70.Ck
Opis:
A brief review of the main experimental techniques exploiting synchrotron radiation in semiconductor physics is attempted. Topics emphasized include the study of surface and interface phenomena, such as surface structural properties (e.g. surface reconstruction) by X-ray diffraction, surface dynamical properties (e.g. adsorbate vibrational amplitudes) by the X-ray standing waves technique, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many experimental techniques applicable to research in semiconductor physics. Examples of experiments made possible by the so-called "third generation", high-brilliance synchrotron sources are presented.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 17-24
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Diffraction Investigations of Structure of Silicon Single Crystals after Irradiation by Heavy Ions
Autorzy:
Auleytner, J.
Khrupa, V. I.
Datsenko, L. I.
Krasulya, S. M.
Skorokhod, M. J.
Powiązania:
https://bibliotekanauki.pl/articles/1945213.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
68.35.Bs
Opis:
Structure distortions appearing near the surfaces of crystals irradiated by high energy ions (H, Kr, U) accelerated till energy of several MeV using respectively the accelerator U-120 (Kiev, Ukraine), the heavy ions accelerators (Caen, France and Darmstadt, Germany) were investigated by means of various X-ray diffraction methods (topography and diffractometry). Nonhomogeneous distribution of lattice distortions near the surfaces of irradiated crystals were discovered using these methods in all of the samples. Besides the barrier zones where the accelerated ions stopped, the wide distorted regions situated nearer the surface were found. The fine structure of different zones, their extents as well as the level of static Debye-Waller factor were determined. The depth distribution of this factor was compared with the results obtained by using the edge contrast measurements some years ago. This permitted us to draw conclusions about some relaxation of elastic strains in the interference regions after many years.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 301-307
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Near Field Optical Microscopy and Spectroscopy with STM and AFM Probes
Autorzy:
Bergossi, O.
Bachelot, R.
Wioland, H.
Wurtz, G.
Laddada, R.
Adam, P. M.
Bijeon, J. L.
Royer, P.
Powiązania:
https://bibliotekanauki.pl/articles/1968764.pdf
Data publikacji:
1998-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.60.Pb
42.62.Fi
61.16.Ch
68.35.Bs
Opis:
This article deals with a new generation of scanning near field optical microscopes (SNOM), called apertureless SNOM, based on metallic, semi-conductive or dielectric probes. The classification of the apertureless probe among the usual SNOM probes is discussed in the first part. Then, we present the different apertureless SNOM configurations that we develop, with various commercial AFM and home-made tungsten tips, and several illumination and collection modes. Finally, after a preliminary result in near field imaging, we propose a promising application of such microscopes dedicated to the near field fluorescence spectroscopy.
Źródło:
Acta Physica Polonica A; 1998, 93, 2; 393-398
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Quality (100) and (001) Oriented Substrates Prepared from Czochralski Grown SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ Single Crystals
Autorzy:
Berkowski, M.
Fink-Finowicki, J.
Sass, J.
Mazur, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964370.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.50.Ks
68.35.Bs
Opis:
The growth of SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ crystals on ⟨100⟩ and ⟨001⟩ oriented seeds was investigated. Various defects, which appeared in crystals grown on these two orientations, were observed in polarized light and by X-ray diffraction topography. It was found that to obtain a substrate of the best quality, the crystal should be cut along the growth directions. Therefore, crystals pulled along ⟨100⟩ direction are utilized for preparation of (001) substrates, whereas (100) substrates are better to cut from crystals grown on ⟨001⟩ seed. The quality of the prepared substrates was determined by high resolution X-ray diffraction study in terms of rocking curve and mean mosaic angle.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 201-204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deterministic Periodical and Quasiperiodical Surfaces of III-V Compounds: Preparation, Investigations and Applications
Autorzy:
Dmitruk, N. L.
Mayeva, O. I.
Yastrubchak, O. B.
Beketov, G. V.
Powiązania:
https://bibliotekanauki.pl/articles/1969052.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
73.40.Ns
78.30.Fs
Opis:
Autocorrelation functions for rough (random, quasiperiodical and deterministicperiodical) surfaces are deduced from the surface profiles determined by using the line-by-line analysis of atomic force microscopy images. It is shown that the initial parts of autocorrelation functions have a Gaussian form. An attempt to use the concept of fractal as a bridge between deterministic periodic and random (spontaneous) surfaces including quasiperiodic ones have been made.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 285-290
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties and Photoemission of Microrelief Surfaces of III-V Semiconductors
Autorzy:
Dmitruk, N. L.
Mamikin, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/1931741.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
68.35.Bs
78.30.Fs
Opis:
The optical properties (infrared reflectance) and the photoemission current for the surface-barrier structures of metal-semiconductor type with microrelief interface have been investigated. The participation of surface plasmon polaritons in internal photoemission of the Au-GaAs Schottky barriers has been observed.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 811-815
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Superconducting Lead Granular Layer Prepared by Reducing in Hydrogen Lead of Germanate Glasses
Autorzy:
Gackowska, J.
Gazda, M.
Trzebiatowski, K.
Kusz, B.
Powiązania:
https://bibliotekanauki.pl/articles/2046760.pdf
Data publikacji:
2006-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.Fs
68.35.Bs
68.37.Ps
71.23.Cq
Opis:
The thin layer of Pb granules on the surface of the lead-germanate glass was prepared by thermal annealing in hydrogen. The structure and superconducting properties of lead layer depend on temperature and time of reduction. The influence of time and temperature of reduction on the properties of the reduced layer thickness has been studied.
Źródło:
Acta Physica Polonica A; 2006, 109, 4-5; 591-596
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Models for the Interpretation of the Different Interfaces Sb/InP(I00) Using Quantitative Results of AES and EELS
Autorzy:
Gruzza, B.
Porte, A.
Bideux, L.
Jardin, C.
Miloua, J.
Powiązania:
https://bibliotekanauki.pl/articles/1892478.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.35.Fx
72.80.Ey
82.80.Pv
Opis:
The model of quantitative interpretation of Auger electron spectroscopy (AES) results is described and some complementary electron energy loss spectroscopy (EELS) results are also reported. It is shown that the InP(100) surfaces perturbed by the Ar$\text{}^{+}$ cleaning treatment can be ordered by Sb deposition. The variations of different Auger lines are interpreted, and the transformations 3D → 2D of the initially formed In clusters can be well-followed during the first stages of the deposition.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 223-231
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Structure of the (100) Surface of Ag-In-Gd 1/1 Approximant
Autorzy:
Hars, S.
Sharma, H.
Smerdon, J.
Yadav, T.
Tamura, R.
Shimoda, M.
McGrath, R.
Powiązania:
https://bibliotekanauki.pl/articles/1203006.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.44.Br
68.35.Bs
68.37.Ef
71.23.Ft
Opis:
Scanning tunneling microscopy is employed to characterise the structure and morphology of the (100) surface of the Ag-In-Gd 1/1 approximant. The surface prepared by the usual method of sputter-annealing produces step-terrace structure. Observed step heights are consistent with the lattice constant of the bulk. Scanning tunneling microscopy on terraces reveals cluster-like protrusions arranged with a square unit cell as expected from the bulk. It has not been possible to assign the terraces to the specific bulk planes because of lack of atomic resolution on terraces.
Źródło:
Acta Physica Polonica A; 2014, 126, 2; 479-481
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reconstruction of the (001) Surface of Si from Molecular Dynamics
Autorzy:
Holender, J.
Jędrzejek, Cz.
Powiązania:
https://bibliotekanauki.pl/articles/1877536.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Md
68.35.Bs
Opis:
The reconstruction of the (001) surface of Si at various temperatures is studied using molecular dynamics with many-body interactions. Two types of potentials were used: the Stillinger-Weber (SW), and Pearson and co-workers Axilrod-Teller type potential (AT). For Stillinger-Weber potential at low temperatures the (2x1) dimer reconstruction is about 0.07 eV per surface atom more preferable than the c(2x2)structure which is in agreement with the experimental reconstruction observed by STM. Contrary, for Axilrod-Teller type potential the c(2x2) structure is lower by 0.2 eV than the (2x1) structure. The silicon surface is stable up to 1500 K, all the dimers remain unbroken but some of them are tilted. The energies of various defects (suggested by STM studies) like single vacancy, two adjacent Si atoms vacancy, dimer vacancy, dimer vacancy with lower layer atoms rebonding and double dimer vacancy are estimated.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 117-120
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Self-Assembled Parallel Mesoscopic Pb Wires on Vicinal Si(111)
Autorzy:
Jałochowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/2014187.pdf
Data publikacji:
2000-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.Ch
68.65.+g
68.35.Bs
68.55.Jk
81.15.Ef
Opis:
The work presents a novel method of production of mesoscopic metallic wires on semiconducting surfaces. Making use the self-assembly phenomenon, arrays of extremely long and perfectly parallel mesoscopic Pb-wires on vicinal Si(111) substrates are formed and studied in UHV conditions. Before deposition of Pb a uniform distribution of monoatomic steps and terraces was induced by formation of Au chains running along step edges. The wires growing on the substrates held at temperatures close to the room temperature reach up to 8 µ length. A reflection high electron energy diffraction experiment shows that the wires laying on Si(533) along the step edges have triangular cross-section determined by (111) and (100) facets of Pb. Scanning tunneling microscopy images collected at low temperatures have enabled us to determine details of the wires shape and morphology of the substrate. The width of the wires was approximately equal to 60 nm whereas their height was about 10 nm. The observed strong growth anisotropy is attributed to step edge barriers and high Pb mobility on the smooth Si(111) narrow terraces that form vicinal surfaces and the anisotropic strain due to large misfit between Pb and Si lattices.
Źródło:
Acta Physica Polonica A; 2000, 98, 3; 259-269
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Nickel Hydroxide Layer on Ni Electrode by in situ Atomic Force Microscopy
Autorzy:
Kowal, A.
Niewiara, R.
Perończyk, B.
Haber, J.
Powiązania:
https://bibliotekanauki.pl/articles/1945263.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
Opis:
The layer of nickel hydroxide was formed on the surface of polycrystalline Ni immersed in 1 M KOH by cycling the potential in the range between -0.1 and 0.6 V vs. Pt in 1 M KOH. The layer thickness of 8.5 nm, estimated by an electrochemical method, corresponded to about 10 monolayers of Ni(OH)$\text{}_{2}$. The changes of thickness of the nickel hydroxide film during the process of its oxidation and reduction were monitored by the use of in situ atomic force microscopy with the tip fixed and the electrode potential scanned between -0.1 and +0.6 V at a scan rate of 100 mV/s. The process of oxidation resulted in the film thickness decrease by about 3 nm. This change could be explained as to be due to the removal of a proton from Ni(OH)$\text{}_{2}$ layer.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 401-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Etching Effects Occurring in Secondary Ion Mass Spectrometry Depth profiling of InGaAs/InP and InGaAs/AlAs/InP MBE Grown Heterostructures
Autorzy:
Kozhukhov, A. V.
Konarski, P.
Herman, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/1952035.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.Jk
Opis:
Depth profiling analysis of In$\text{}_{x}$Ga$\text{}_{1-x}$As heterolayers grown by MBE on Fe doped InP(100) substrates was performed in the SAJW-02 secondary ion mass spectrometry analyser equipped with 4.5 keV O$\text{}_{2}^{+}$ ion source and a specially designed sample manipulator enabling depth profiling in the standard as well as in so-called Zalar rotation operation modes. The fairly high energy of the primary ion beam required for sputtering in secondary ion mass spectrometry measurements causes changes in surface topography, usually of different origin. Depth resolution parameters and roughness formation monitored by scanning electron microscopy were analysed for a set of samples with composition x changing in the range 0.33 to 0.60. The results were compared with the same data for a layer of x=0.53 (best lattice-matched to InP) grown on the top of a three monolayer thick AlAs film deposited previously on the InP substrate. Improvement in the depth profile resolution was revealed for the structure with an AlAs layer indicating sharper interface transition. Moreover, sample rotation applied for this structure improves further the depth profiling resolution. Thus, we showed for the first time that a very thin AlAs layer grown by MBE between the InP substrate and the In$\text{}_{0.53}$Ga$\text{}_{0.47}$As improves considerably the heterointerface properties and that Zalar rotation applied for depth profiling of the investigated material system diminishes further the negative effects of ion etching on depth resolution in secondary ion mass spectrometry analysis.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 869-874
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure and Relative Stability of Si$\text{}_{n}$ (n=10-16) Clusters
Autorzy:
Mahtout, S.
Belkhir, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/2046815.pdf
Data publikacji:
2006-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
36.40.-c
61.43.Bn
61.46.+w
68.35.Bs
Opis:
Ab initio molecular dynamics simulated annealing technique coupled with density functional theory in the local density approximation implemented in Spanish initiative for electronic simulations with thousands of atoms method is employed to search the ground state geometries of silicon clusters containing 10-16 atoms. We found a number of new isomers which are not previously reported. The atoms in all these clusters exhibit pronounced preference for residing on the surface. The binding energies increase while the highest occupied-lowest unoccupied molecular orbital gap generally decreases with the increase in clusters size.
Źródło:
Acta Physica Polonica A; 2006, 109, 6; 685-693
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defects in Detwinned LaGaO$\text{}_{3}$ Substrates
Autorzy:
Mazur, K.
Fink-Finowicki, J.
Berkowski, M.
Schell, N.
Powiązania:
https://bibliotekanauki.pl/articles/1964373.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Mm
68.35.Bs
Opis:
Single crystals of lanthanum gallate would be the suitable substrate for YBaCuO films except for the phase transition and the tendency to twinning existing in this material. However, by appropriate choice of growth conditions in the Czochralski method, it is possible to grow single crystal of LaGaO$\text{}_{3}$ with low density of twin boundaries. Special stress and temperature treatment can then be applied to such materials to remove majority of existing twins. The substrates were examined by X-ray topography before and after detwinning and the surface was scanned with a profilometer.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 205-208
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 28

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