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Wyszukujesz frazę "68.35.Bs" wg kryterium: Temat


Tytuł:
Observation of Nickel Hydroxide Layer on Ni Electrode by in situ Atomic Force Microscopy
Autorzy:
Kowal, A.
Niewiara, R.
Perończyk, B.
Haber, J.
Powiązania:
https://bibliotekanauki.pl/articles/1945263.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
Opis:
The layer of nickel hydroxide was formed on the surface of polycrystalline Ni immersed in 1 M KOH by cycling the potential in the range between -0.1 and 0.6 V vs. Pt in 1 M KOH. The layer thickness of 8.5 nm, estimated by an electrochemical method, corresponded to about 10 monolayers of Ni(OH)$\text{}_{2}$. The changes of thickness of the nickel hydroxide film during the process of its oxidation and reduction were monitored by the use of in situ atomic force microscopy with the tip fixed and the electrode potential scanned between -0.1 and +0.6 V at a scan rate of 100 mV/s. The process of oxidation resulted in the film thickness decrease by about 3 nm. This change could be explained as to be due to the removal of a proton from Ni(OH)$\text{}_{2}$ layer.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 401-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reconstruction of the (001) Surface of Si from Molecular Dynamics
Autorzy:
Holender, J.
Jędrzejek, Cz.
Powiązania:
https://bibliotekanauki.pl/articles/1877536.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Md
68.35.Bs
Opis:
The reconstruction of the (001) surface of Si at various temperatures is studied using molecular dynamics with many-body interactions. Two types of potentials were used: the Stillinger-Weber (SW), and Pearson and co-workers Axilrod-Teller type potential (AT). For Stillinger-Weber potential at low temperatures the (2x1) dimer reconstruction is about 0.07 eV per surface atom more preferable than the c(2x2)structure which is in agreement with the experimental reconstruction observed by STM. Contrary, for Axilrod-Teller type potential the c(2x2) structure is lower by 0.2 eV than the (2x1) structure. The silicon surface is stable up to 1500 K, all the dimers remain unbroken but some of them are tilted. The energies of various defects (suggested by STM studies) like single vacancy, two adjacent Si atoms vacancy, dimer vacancy, dimer vacancy with lower layer atoms rebonding and double dimer vacancy are estimated.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 117-120
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Etching Effects Occurring in Secondary Ion Mass Spectrometry Depth profiling of InGaAs/InP and InGaAs/AlAs/InP MBE Grown Heterostructures
Autorzy:
Kozhukhov, A. V.
Konarski, P.
Herman, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/1952035.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.Jk
Opis:
Depth profiling analysis of In$\text{}_{x}$Ga$\text{}_{1-x}$As heterolayers grown by MBE on Fe doped InP(100) substrates was performed in the SAJW-02 secondary ion mass spectrometry analyser equipped with 4.5 keV O$\text{}_{2}^{+}$ ion source and a specially designed sample manipulator enabling depth profiling in the standard as well as in so-called Zalar rotation operation modes. The fairly high energy of the primary ion beam required for sputtering in secondary ion mass spectrometry measurements causes changes in surface topography, usually of different origin. Depth resolution parameters and roughness formation monitored by scanning electron microscopy were analysed for a set of samples with composition x changing in the range 0.33 to 0.60. The results were compared with the same data for a layer of x=0.53 (best lattice-matched to InP) grown on the top of a three monolayer thick AlAs film deposited previously on the InP substrate. Improvement in the depth profile resolution was revealed for the structure with an AlAs layer indicating sharper interface transition. Moreover, sample rotation applied for this structure improves further the depth profiling resolution. Thus, we showed for the first time that a very thin AlAs layer grown by MBE between the InP substrate and the In$\text{}_{0.53}$Ga$\text{}_{0.47}$As improves considerably the heterointerface properties and that Zalar rotation applied for depth profiling of the investigated material system diminishes further the negative effects of ion etching on depth resolution in secondary ion mass spectrometry analysis.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 869-874
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystallography of Boundaries and Interfaces
Autorzy:
Neumann, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945170.pdf
Data publikacji:
1996-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Jk
68.35.Bs
Opis:
The main crystallographic concepts of characterizing interface structures are treated and reviewed. It will be demonstrated in which way the approaches of interface crystallography can be used to analyse interface structures experimentally observed.
Źródło:
Acta Physica Polonica A; 1996, 89, 2; 195-207
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reconstruction of Tungsten (111) and (211) Surfaces Induced by Carbon and Oxygen
Autorzy:
Szczudlo, Z.
Zuber, S.
Szczepkowicz, A.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2035646.pdf
Data publikacji:
2002-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
07.79.Cz
Opis:
Scanning tunneling microscopy is used to obtain images of reconstructed W(111) and W(211) surfaces. The reconstruction is induced by submonolayer coverages of carbon and oxygen.
Źródło:
Acta Physica Polonica A; 2002, 102, 6; 781-784
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defects in Detwinned LaGaO$\text{}_{3}$ Substrates
Autorzy:
Mazur, K.
Fink-Finowicki, J.
Berkowski, M.
Schell, N.
Powiązania:
https://bibliotekanauki.pl/articles/1964373.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Mm
68.35.Bs
Opis:
Single crystals of lanthanum gallate would be the suitable substrate for YBaCuO films except for the phase transition and the tendency to twinning existing in this material. However, by appropriate choice of growth conditions in the Czochralski method, it is possible to grow single crystal of LaGaO$\text{}_{3}$ with low density of twin boundaries. Special stress and temperature treatment can then be applied to such materials to remove majority of existing twins. The substrates were examined by X-ray topography before and after detwinning and the surface was scanned with a profilometer.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 205-208
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Diffraction Investigations of Structure of Silicon Single Crystals after Irradiation by Heavy Ions
Autorzy:
Auleytner, J.
Khrupa, V. I.
Datsenko, L. I.
Krasulya, S. M.
Skorokhod, M. J.
Powiązania:
https://bibliotekanauki.pl/articles/1945213.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
68.35.Bs
Opis:
Structure distortions appearing near the surfaces of crystals irradiated by high energy ions (H, Kr, U) accelerated till energy of several MeV using respectively the accelerator U-120 (Kiev, Ukraine), the heavy ions accelerators (Caen, France and Darmstadt, Germany) were investigated by means of various X-ray diffraction methods (topography and diffractometry). Nonhomogeneous distribution of lattice distortions near the surfaces of irradiated crystals were discovered using these methods in all of the samples. Besides the barrier zones where the accelerated ions stopped, the wide distorted regions situated nearer the surface were found. The fine structure of different zones, their extents as well as the level of static Debye-Waller factor were determined. The depth distribution of this factor was compared with the results obtained by using the edge contrast measurements some years ago. This permitted us to draw conclusions about some relaxation of elastic strains in the interference regions after many years.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 301-307
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth Morphology and Atomic Surface Topology by Hartman-Perdok Analysis: Application to ABCO$\text{}_{4}$ and YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$
Autorzy:
Woensdregt, C. F.
Powiązania:
https://bibliotekanauki.pl/articles/1964232.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Aj
68.35.-p
68.35.Bs
Opis:
The Hartman-Perdok theory explains the relation between crystal structure and morphology and provides the atomic surface topology of the crystal-melt interface. Hartman-Perdok theory has been applied to CaYAlO$\text{}_{4}$ as model for all other ABCO$\text{}_{4}$ compounds with a K$\text{}_{2}$NiF$\text{}_{4}$ crystal structure. F forms are {002}, {101}, {103}, {110}, {112}, {200}, {211} and {213}. The strongly anisotropic shape caused by the perovskite-like AlO$\text{}_{6}$ layers || {001} is very distinct in all theoretical growth forms. The form with formal charges is planar following {001} with {101} and {110} as lateral forms. Disordering of the boundary ions results in the disappearance of {110}. At lower effective charge on oxygen ions, q$\text{}_{O}$, the ordered forms are still tabular, while {110} and {112} are the only lateral faces. At still lesser negative q$\text{}_{O}$ {112} appears as well. On the disordered models {112} replaces {110}. Crystals show often variations in colour parallel to the {110} interface due to the surface topology of {110}. YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$ has, for x=1, the following F forms: {001}, {101}, {103}, {112} and {114}. The theoretical growth form of this tetragonal phase is tabular following {001} with {101} as lateral form. For x=0 the growth form shows important {101} and minor {103} and {001}. When the boundary ions on (001) are ordered, the outermost layer of {001} contains half of the Cu$\text{}^{+}$ (x=1) or Cu$\text{}^{3+}$ and O$\text{}^{2-}$ (x=0) ions in a c(2×2) quadratic lattice which reduces the {001} growth rate significantly. An (1×2) reconstructed {010} surface can be traced for the orthorhombic polymorph which results into the appearance of {010} on the ordered growth form. Otherwise the presence of {010} on as-grown crystals must be due to external factors.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 35-46
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Review of Surface Relaxation and Reconstruction Phenomena
Autorzy:
Zieliński, P.
Powiązania:
https://bibliotekanauki.pl/articles/1945187.pdf
Data publikacji:
1996-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.-p
68.35.Bs
68.35.Md
68.35.Rh
Opis:
The basic definitions concerning structure of surface are given. The principal experimental methods of the observation of surfaces are reviewed. A possibly heuristic explanation is given of principal theoretical concepts underlying the present understanding of the surface phenomena. The best known and/or understood examples of the surface relaxation, surface reconstruction and roughening are reviewed.
Źródło:
Acta Physica Polonica A; 1996, 89, 2; 251-263
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of Synchrotron Radiation to the Atomic and Electronic Structure of Semiconductors
Autorzy:
Altarelli, M.
Powiązania:
https://bibliotekanauki.pl/articles/1931851.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.-a
78.70.Ck
Opis:
A brief review of the main experimental techniques exploiting synchrotron radiation in semiconductor physics is attempted. Topics emphasized include the study of surface and interface phenomena, such as surface structural properties (e.g. surface reconstruction) by X-ray diffraction, surface dynamical properties (e.g. adsorbate vibrational amplitudes) by the X-ray standing waves technique, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many experimental techniques applicable to research in semiconductor physics. Examples of experiments made possible by the so-called "third generation", high-brilliance synchrotron sources are presented.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 17-24
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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