Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "68.15.+e" wg kryterium: Temat

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-7 z 7
    Tytuł:
    Photoacoustic Study of the Interaction Between Thin Oil Layers with Water
    Autorzy:
    Szurkowski, J.
    Pawelska, I.
    Wartewig, S.
    Pogorzelski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2014031.pdf
    Data publikacji:
    2000-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.70.Cv
    36.20.Ng
    68.15.+e
    Opis:
    In the presented paper the structural changes in thin olive oil layers taking place as a result of interaction with water using a photoacoustic technique were studied. The oil layers were spread from a solution in a volatile solvent (ethyl ether) on the water and copper surface. These studies are a natural continuation of the previous work on a layered system performed within the light range (680 nm), which pointed to the irregularities of oil layers related to their thickness is now expanded to the infrared band. A structural irregularity was observed for a layer thickness of 100 μm, but it did not appear for the one of pure bulk oil. Signatures of irregularity were clearly observed in the phase plots whereas the amplitude dependences were not sensitive to them. The performed studies allowed one to relate the diversity of thermal parameters in the samples with structural changes found in oil layers originated from oil-water interactions.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 6; 1073-1082
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    First Principles Study of Gas Adsorption Dynamics on Pristine and Defected Graphene
    Autorzy:
    Wlazło, M.
    Majewski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398540.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    31.15.E-
    61.48.Gh
    68.43.-h
    Opis:
    We present the results of ab initio calculations of gas adsorption processes on graphene. Static density functional theory framework is used to obtain adsorption energies of several species on a Stone-Wales defected graphene monolayer. The Van der Waals interaction is taken into account by a semi-empirical correction. Sites closer to the defect are found to induce stronger adsorption compared to sites further away, where the graphene crystal structure is intact. The Car-Parrinello ab initio molecular dynamics simulations are performed at high temperatures. CH₃ is found to be stably physisorbed or chemisorbed at 300 K.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-142-A-144
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering
    Autorzy:
    Iljinas, A.
    Burinskas, S.
    Dudonis, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503904.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Cd
    68.55.-a
    78.20.-e
    Opis:
    In this work $Bi_2O_3$ thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the $Bi_2O_3$ films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 60-62
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Pulsed Laser Power Annealing on Structural and Optical Characteristics of ZnSe Thin Films
    Autorzy:
    Aly, S.
    Akl, Alaa
    Howari, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1401905.pdf
    Data publikacji:
    2015-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.-z
    68.55.jd
    68.55.ag
    78.70.Ck
    81.15.Dj
    78.20.-e
    Opis:
    Samples of ZnSe of the same film thickness (320 nm) have been thermally evaporated on unheated quartz substrates using high purity powder. The prepared films were subjected to pulsed laser annealing of two different powers. X-ray diffraction studies revealed that the as-deposited samples were polycrystalline cubic (zinc-blende type) structure. As the annealing power increases, the crystallinity of ZnSe films was improved with preferential orientation along the (111) direction parallel to the substrate surface. Microstructural characterizations have been evaluated using the Debye-Scherrer formula. The absorption coefficient as well as the energy gap for the as-deposited and the annealed samples were also reported.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 3; 414-418
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural Characteristics and Optical Properties of Thermally Oxidized Zinc Films
    Autorzy:
    Rusu, D.
    Rusu, G.
    Luca, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505094.pdf
    Data publikacji:
    2011-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.hf
    68.55.-a
    68.55.J-
    81.15.Aa
    78.20.-e
    Opis:
    Zinc oxide (ZnO) thin films (with thickness ranged from 780 nm to 1150 nm) were prepared by thermal oxidation in air (at 600-700 K, for 20-30 min) of vacuum evaporated metallic zinc films. The Zn films were deposited on glass substrates at room temperature. The crystalline structure of ZnO thin film samples was investigated using X-ray diffraction technique. The diffraction patterns revealed that the ZnO thin films were polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to substrate surface. Some important structural parameters (lattice parameters of the hexagonal cell, crystallite size, Zn-O bond length, residual stress, etc.) of the films were determined. The surface morphology of the prepared ZnO thin films, investigated by atomic force microscopy, revealed a uniform columnar structure. The spectral dependence of transmission coefficient has been studied in the wavelength range from 300 nm to 1700 nm. The optical energy band gap calculated from the absorption spectra (supposing allowed direct band-to-band transitions) are in the range 3.17-3.19 eV. The dependence of the microstructural and optical characteristics on the preparation conditions (oxidation temperature, oxidation time, etc.) of the oxidized zinc films is discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 6; 850-856
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Boric Acid Content on the Structural and Optical Properties of MnS Films Prepared by Spray Pyrolysis Technique
    Autorzy:
    Bedır, M.
    Öztaş, M.
    Çelik, S.
    Özdemır, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1205283.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Rs
    78.28.-e
    61.72.Vv
    61.05.cp
    68.55.Jk
    Opis:
    Boron doped MnS films were obtained by the spray pyrolysis method using the boric acid ($H_3BO_3$) as dopant source at a substrate temperature of 350°C. The spray pyrolysis method has a wide range of application areas with a low cost well-suited for the manufacture of solar cells. The properties of boron doped MnS films were investigated as a function of doping concentration. The X-ray analysis showed that the films were polycrystalline fitting well with a hexagonal structure and have preferred orientation in the [002] direction. The optical band gap of the undoped and boron doped MnS films were found to vary from 3.38 to 3.20 eV. The changes observed in the energy band gap and structural properties of the films related to the boric acid concentration are discussed in detail.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 3; 840-844
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Near IR Refractive Index for GaInN Heavily Doped with Silicon
    Autorzy:
    Cywiński, G.
    Kudrawiec, R.
    Rzodkiewicz, W.
    Kryśko, M.
    Litwin-Staszewska, E.
    Misiewicz, J.
    Skierbiszewski, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791356.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    78.66.Fd
    81.15.Hi
    68.55.-a
    78.20.-e
    Opis:
    The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of $Ga_{0.998}In_{0.002}N:Si$ has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× $10^{20} cm^{-3}$ and 67 $cm^{2}$/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 936-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies