Temat: 67.40.-w - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Superconducting Properties of the Charged Weakly Interacting Bose Gas ("d" Symmetry)
Autorzy:: Galasiewicz, Z. M.
Powiązania:: https://bibliotekanauki.pl/articles/2014015.pdf
Data publikacji:: 2000-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 67.40.-w
74.20.-z
Opis:: A system of charged weakly interacting bosons with "d" symmetry is considered. The interaction U$\text{}^{(d)}$ = U$\text{}^{(s)}$ f(theta) contains the angle dependence f(theta) ~ |Y$\text{}_{2,1}$|$\text{}^{2}$ consistent with "d" symmetry. This system resembles much more free bosons than the system with "s" symmetry (interaction U$\text{}^{(s)}$). For example at T=0, n approx n$\text{}_{c}^{(d)}$, where n ≈ n$\text{}_{c}^{(d)}$ are the densities of particles and condensate respectively.
Źródło:: Acta Physica Polonica A; 2000, 97, 6; 1011-1016
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 2.

Tytuł:: Bose-Einstein Condensation of Hard Sphere Homogeneous Gas in Static Fluctuation Approximation
Autorzy:: Al-Sugheir, M.
Gasymeh, S.
Shatnawi, M.
Bawa'aneh, M.
Powiązania:: https://bibliotekanauki.pl/articles/1807770.pdf
Data publikacji:: 2009-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 03.75.Nt
05.30.Jp
67.40.-w
67.25.D-
67.25.de
Opis:: The condensation fraction, transition temperature, and energy per particle for a hard sphere interacting homogeneous Bose gas using the static fluctuation approximation have been determined. The transition temperature at liquid helium density has been found to be lower than that for the noninteracting gas. Both superfluidity and the Bose-Einstein condensation have been found to occur at the same transition temperature. Our results are consistent with results obtained by other methods.
Źródło:: Acta Physica Polonica A; 2009, 116, 2; 154-156
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 3.

Tytuł:: Vortex Lines in Motion
Autorzy:: Białynicki-Birula, I.
Młoduchowski, T.
Radożycki, T.
Śliwa, C.
Powiązania:: https://bibliotekanauki.pl/articles/2030362.pdf
Data publikacji:: 2001-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 03.65.-w
67.40.Vs
Opis:: We extend our previous analysis of the motion of vortex lines in wave mechanics to the case of more elaborate vortex patterns and to a rotating harmonic trap.
Źródło:: Acta Physica Polonica A; 2001, 100, Supplement; 29-41
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 4.

Tytuł:: Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots
Autorzy:: Ilczuk, E.
Korona, K. P.
Babiński, A.
Kuhl, J.
Powiązania:: https://bibliotekanauki.pl/articles/2028722.pdf
Data publikacji:: 2001-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.40.+w
78.47.+p
78.67.-n
Opis:: We present photocurrent and time-resolved photoluminescence investigations of AlGaAs/GaInAs/GaAs structures containing GaInAs/GaAs self-assembled quantum dots. The high electrical field in those devices significantly influences carrier dynamics. The photocurrent spectra show a double peak with maxima at 1.40 and 1.47 eV (at 80 K). These maxima are due to the GaInAs wetting layer (higher) and the quantum dots (lower). The photoluminescence spectra comprise weak excitonic luminescence from GaAs at 1.504 eV (at 80 K) and stronger and broad emission from the Ga$\text{}_{0.4}$In$\text{}_{0.6}$As quantum dots. At 300 K, the quantum dots emission has a lifetime of 1.1 ns and has a maximum at an energy of 1.38 eV. By analysis of both experiments, we can separate the influence of different radiative and nonradiative recombination processes. So, the tunneling rate: r$\text{}_{T}$=0.5 ns$\text{}^{-1}$ and the radiative recombination rate in the quantum dots: r$\text{}_{RQD}$=0.4 ns$\text{}^{-1}$ have been determined. The high tunneling probability (due to the influence of the built-in electric field) reveals that the tunneling effect is important for the recombination and transport processes in our structures.
Źródło:: Acta Physica Polonica A; 2001, 100, 3; 379-386
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 5.

Tytuł:: Terahertz Radiation Induced Spin Photocurrents in Non-Magnetic Low Dimensional Structures
Autorzy:: Ganichev, S. D.
Prettl, W.
Powiązania:: https://bibliotekanauki.pl/articles/2043707.pdf
Data publikacji:: 2005-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.40.+w
72.25.Fe
78.67.-n
73.21.Fg
Opis:: Spin photocurrents generated by homogeneous excitation with terahertz radiation in low dimensional structures are reviewed. Three microscopic mechanisms are responsible for the occurrence of an electric current linked to a uniform spin polarization in a quantum well, the circular photogalvanic effect, the spin-galvanic effect and the magneto-gyrotropic effect. These phenomena provide several methods to investigate various spin properties in low dimensional structures like details of band structure and spin relaxation time.
Źródło:: Acta Physica Polonica A; 2005, 108, 4; 581-608
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 6.

Tytuł:: Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm
Autorzy:: Cywiński, G.
Skierbiszewski, C.
Feduniewicz-Żmuda, A.
Siekacz, M.
Nevou, L.
Doyennette, L.
Julien, F. H.
Prystawko, P.
Kryśko, M.
Grzanka, S.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2046911.pdf
Data publikacji:: 2006-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.Fg
78.66.-w
78.67.De
78.40.Fy
81.15.Hi
Opis:: Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.
Źródło:: Acta Physica Polonica A; 2006, 110, 2; 175-181
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Informacja

Wyszukujesz frazę "67.40.-w" wg kryterium: Temat

Źródło danych

Dostawca treści

Kolekcja

Rok wydania

Wydawca

Temat

Autor

Typ dokumentu

Język