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Wyświetlanie 1-6 z 6
Tytuł:
The H$\text{}_{2}$ Molecule in Semiconductors: An Angel in GaAs, a Devil in Si
Autorzy:
Estreicher, S. K.
Powiązania:
https://bibliotekanauki.pl/articles/2035568.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
66.30.Lw
72.10.Fk
Opis:
The electrical and optical properties of semiconductors are largely determined by the defects and impurities they contain. Without a doubt, hydrogen is the impurity which exhibits the most varied and exotic properties. In most semiconductors, it is found in three charge states and four configurations. It forms (at least) two types of dimers as well as small and large precipitates such as platelets. H also interacts with impurities and defects. It removes or changes the electrical activity of many shallow and deep centers, and catalyzes the diffusion of interstitial oxygen (in Si). Sometimes, it exhibits quantum tunneling and is associated with unusual effects such as Fermi resonances. But one of the most exotic forms of hydrogen in GaAs and Si is the interstitial H$\text{}_{2}$ molecule, which appears to play a critical role in processes such as the "smart cut". It is the only interstitial molecule observed (so far) in semiconductors. In GaAs, it behaves like a nearly-free rotator, with properties very much as one would expect them to be. But in Si, the early experiments were puzzling. No ortho/para splitting was observed, the symmetry appeared to be C$\text{}_{1}$, the single HD line was at the wrong place and had the wrong amplitude, and other features seemed strange as well. Recent experimental studies have now resolved many issues. However, the behavior of the simplest molecule in the Universe proved to be a tough nut to crack, which goes to show that devils can be a lot more fun than angels after all.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 513-528
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of the Defect Structure of $Hg_{1-x}Cd_{x}Te$ Films by Ion Milling
Autorzy:
Pociask, M.
Izhnin, I.
Ilyina, E.
Dvoretsky, S.
Mikhailov, N.
Sidorov, Yu.
Varavin, V.
Mynbaev, K.
Powiązania:
https://bibliotekanauki.pl/articles/1811974.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
61.80.Jh
66.30.Lw
Opis:
A study of the defect structure of heteroepitaxially grown $Hg_{1-x}Cd_{x}Te$ (MCT) films was performed with the use of ion milling. Undoped and in situ As- (acceptor) or In- (donor) doped films with x=0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration ≈ $10^{17} cm^{-3}$, formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of $10^{15} cm^{-3}$, which is typical of high-quality MCT.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1293-1301
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of Recrystallization Temperature of Uranium Dioxide in Function of Burn-Up and Its Impact on Fission Gas Release
Autorzy:
Szuta, M.
El-Koliel, M. S.
Powiązania:
https://bibliotekanauki.pl/articles/2011009.pdf
Data publikacji:
1999-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
25.85.Ec
66.30.Lw
Opis:
In the present paper it is assumed that the recrystallization temperature of uranium dioxide decreases with burn-up. Two opposing effects of enhancement and inhibition of irradiation damage introduced by fission effect on grain growth are described. Mathematical model of fission gas release from the UO$\text{}_{2}$ fuel affected by grain growth is presented. Theoretical results are compared with the experimental data.
Źródło:
Acta Physica Polonica A; 1999, 96, 1; 143-151
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Kinetics of Formation and Metastability Mechanism for Thermal Donor-Related Defects in Al-Doped Silicon
Autorzy:
Kaczor, P.
Powiązania:
https://bibliotekanauki.pl/articles/1951989.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Cn
66.30.Lw
61.72.Cc
Opis:
We present a detailed investigation of the growth kinetics of aluminium-related shallow thermal donors: the K-donors. Constraints for the diffusion mechanism of oxygen in silicon at temperatures ≈ 470°C are found. A large entropy of the K-donors is considered as a possible explanation of high diffusivities and interaction radii found for the generation of the K-donors.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 861-864
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Thin Surface Layer on Fission Gas Release from Uranium Dioxide Single Crystal during Irradiation
Autorzy:
Szuta, M.
Powiązania:
https://bibliotekanauki.pl/articles/1945277.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
25.85.Ec
66.30.Lw
Opis:
In the present paper it is assumed that in the fluence range of 4×10$\text{}^{19}$ - 0.5×10$\text{}^{21}$ fissions/cm$\text{}^{3}$ the main contribution to the fission gas release from an uranium dioxide single crystal is from the bubble traps by knock-out process. An analysis of bubble distribution in the single crystal for different temperatures shows that some experimental peculiarities of the fission gas release during irradiation arise from different conditions of the thin surface layer and the interior of the considered solid. The thin surface layer is assigned by the fission fragment range.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 451-455
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Nanostructures in UO$\text{}_{2}$ Fuel at High Burn-ups
Autorzy:
Szuta, M.
Bocar, I.
Powiązania:
https://bibliotekanauki.pl/articles/2035481.pdf
Data publikacji:
2002-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
25.85.Ec
66.30.Lw
Opis:
In the present paper it is assumed that above a limiting value of fission fluency (burn-up) a more intensive process of irradiation induced chemical interaction occurs. A significant part of fission gas product is thus expected to be chemically bounded in the matrix of UO$\text{}_{2}$ fuel. The fission gas atoms substituting, for example, uranium atoms in the crystallographic lattice can form weak facets. At a certain saturation condition, division of the grains can occur at the weak facets and the increase in fission-gas-products release may be expected. The fact that the process of grain division for high burn-ups (70-80 MWd/kgU) forms an extremely fine structure up to a temperature as high as 1100$\text{}^{º}$C and simultaneously the observed decrease in fission gas concentration in the fuel supports this concept. The analysis of fission gas concentration change due to the formation of nanostructures in UO$\text{}_{2}$ fuel at high burn-ups in terms of total surface area change in a function of burn-up and knock-out process is presented.
Źródło:
Acta Physica Polonica A; 2002, 102, 2; 207-213
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-6 z 6

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