- Tytuł:
- High-Pressure Diffraction Study of Ga$\text{}_{1-x}$Al$\text{}_{x}$As
- Autorzy:
-
Paszkowicz, W.
Dynowska, E.
Żytkiewicz, Z. R.
Dobosz, D.
Otto, J. W. - Powiązania:
- https://bibliotekanauki.pl/articles/1964159.pdf
- Data publikacji:
- 1997-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
64.30.+t
62.50.+p
64.70.Kw - Opis:
- The Ga$\text{}_{1-x}$Al$\text{}_{x}$As sample of x=0.5 was prepared from a high quality single crystal grown by electroepitaxy on GaAs. The high-pressure diffraction experiments were performed using a diamond anvil cell and a germanium solid state detector. The zinc-blende phase is stable up to about 17.5 GPa on uploading. A high-pressure phase manifests itself at about 17 GPa, a complete phase change occurs at 18.7 GPa. On downloading, the zinc-blende phase reappears at about 10 GPa. The powder pattern of the high-pressure phase shows some similarities with the GaAs high pressure phases.
- Źródło:
-
Acta Physica Polonica A; 1997, 91, 5; 993-996
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł