Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "61.80.-x" wg kryterium: Temat

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 38
Tytuł:
Effect of High Energy Ion Implantation on the Structure and Mechanical Properties of Aluminium Alloys
Autorzy:
Anishchik, V.
Poliak, N.
Ponaryadov, V.
Opielak, M.
Boiko, O.
Powiązania:
https://bibliotekanauki.pl/articles/1033770.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.80.-x
Opis:
The effect of implantation of Ne⁺, Kr⁺, and Bi⁺ ions over the energy range 26-710 MeV on the structural-phase state and the mechanical properties of the aluminum-based alloys (Al-Cu, Al-Cu-Mg, Al-Cu-Zn, Al-Mn) was studied. The revealed peculiarities of variations in the structure, phase composition, and mechanical properties of aluminum alloys are attributed to the electron deceleration of ions making the principal contribution to the formation of radiation defects which enhance the diffusion processes in the targets.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 291-294
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Long-Range Effect in Ion-Implanted Titanium Alloys
Autorzy:
Budzynski, P.
Sielanko, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402208.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
62.20.Qp
61.82.Bg
61.80.-x
Opis:
Surface modification of titanium alloy (Ti6Al4V) by nitrogen ion implantation and ion beam-assisted deposition (C, N) was investigated. The depth distribution of implanted nitrogen atoms was analysed using the Rutherford backscattering technique. Nitrogen implantation reduces the coefficient of friction and wear. A better effect can be obtained when nitrogen implantation is combined with carbon deposition. Based on the changes in the coefficients of friction and wear as well as profilograms of wear tracks, the improvement of the tribological properties was found at a depth exceeding nearly 5 times the range of the implanted nitrogen ions. Identification of the long-range effect for Ti6Al4V alloy was performed on the basis of tribological analyses. This study is a continuation of research conducted for AISI 316L and H11 steel.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 841-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mechanical Properties of the Stellite 6 Cobalt Alloy Implanted with Nitrogen Ions
Autorzy:
Budzyński, P.
Kamiński, M.
Wiertel, M.
Pyszniak, K.
Droździel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1030127.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
62.20.Qp
61.82.Bg
61.80.-x
Opis:
The effect of nitrogen ion implantation on Stellite 6 cobalt alloy was investigated. In this research, cobalt alloy was implanted with 65 keV nitrogen ions at the fluence of (1÷10)×10¹⁶ N⁺/cm². The distribution of implanted nitrogen ions and vacancies produced by them was calculated using the SRIM program. The surface morphology was examined and the elemental analysis was performed using scanning electron microscopy, energy dispersive X-ray spectroscopy and grazing incidence X-ray diffraction. The wear tests were conducted with the use of the pin-on-disc method. The results demonstrate that implantation with nitrogen ions significantly reduces the friction factor and wear. The friction coefficient of the implanted sample at the fluence of 1×10¹⁷ N⁺/cm² increased to the values characteristic of an unimplanted sample after 5000 measurement cycles. The depth of the worn trace was about 2.0 μm. This implies that the thickness of the layer modified by the implantation process is ≈2.0 μm and exceeds the initial range of the implanted ions by an order of magnitude. This is referred to as a long-range implantation effect. The investigations have shown that the long-range effect is caused by movement of not only implanted nitrogen atoms but also carbon dopant atoms towards the friction zone. Diffusion of carbon atoms has been documented here for the first time. Furthermore, the increased content of oxygen atoms on the track bottom indicates a dominant oxidative wear of the Stellite samples after nitrogen implantation with the energy 65 keV and the fluences of 5×10¹⁶ and 10¹⁷ N⁺/cm².
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 203-205
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of the Defect Structure on the Nitriding of Fe by PIII
Autorzy:
De Baerdemaeker, J.
Jirásková, Y.
Schaaf, P.
Segers, D.
Dauwe, C.
Powiązania:
https://bibliotekanauki.pl/articles/2043328.pdf
Data publikacji:
2005-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
61.80.-x
71.60.+z
78.70.Bj
Opis:
Plasma ion immersion implantation is a promising technique for nitriding. A case study of the characterization of the plasma ion immersion implantation nitriding of iron alloys is the plasma ion immersion implantation nitriding of pure Fe. A set of Fe samples of 99.98% purity and with different defect structure was plasma ion immersion implantation nitrided at different temperatures. Depth profiling of the samples was achieved using positron annihilation spectroscopy with a slow positron beam and nanoindentation. A correspondence was found between the line shape parameter S and the hardness of the plasma ion immersion implantation treated samples.
Źródło:
Acta Physica Polonica A; 2005, 107, 5; 817-820
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Materials Modifications with Cluster Beams: Bulk and Surface Modification
Autorzy:
Dunlop, A.
Powiązania:
https://bibliotekanauki.pl/articles/2011014.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.-d
61.80.-x
Opis:
It is now well accepted that electronic excitation and ionization arising from the slowing down of swift heavy ions can lead to structural modifications in some metallic targets as it has been known for a long time in insulators. A rapid overview of some results obtained after GeV monoatomic heavy ion irradiations will be given. It will then be shown that new specific effects take place during irradiations with cluster ions. The projectiles used are energetic cluster beams: 10 to 40 MeV Au$\text{}_{4}$ or C$\text{}_{60}$ ions. The rates of linear energy deposition in electronic excitation are close for GeV monoatomic and for 10 MeV cluster ions, but the cluster ions have characteristic velocities which are one order of magnitude smaller than those of monoatomic ions. This leads to a strong spatial localization of the deposited energy during the slowing down process. The density of deposited energy can then reach values as high as a few 100 eV/atom. This very high density of energy deposited in the electronic system of the targets can lead to spectacular structural modifications: generation in the vicinity of the ion trajectories of isolated or agglomerated point defects, new crystalline phases, amorphized regions... After an overview of such damage induced in bulk metals, semiconductors, and insulators, we will discuss surface damage, consisting in the formation of bumps, craters, "lava-flows" on the target surface.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 181-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impact of Ion-Irradiation upon Microstructure and Magnetic Properties of NANOPERM-Type Fe₈₁Mo₈Cu₁B₁₀ Metallic Glass
Autorzy:
Hasiak, M.
Miglierini, M.
Powiązania:
https://bibliotekanauki.pl/articles/1030756.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Bb
75.60.Ej
75.30.Kz
61.80.-x
76.80.+y
Opis:
Microstructure and soft magnetic properties of the Fe₈₁Mo₈Cu₁B₁₀ amorphous alloy in the as-quenched state and after irradiation with N⁺ ions are investigated. CEMS spectra show that the irradiated surface at the air side of the ribbons was significantly affected. On the other hand, no noticeable changes were observed at the opposite wheel side. More deep subsurface regions are also not altered as evidenced by CXMS spectra. Thermomagnetic measurements have shown presence of two magnetically different phases with well distinguished Curie points. They can be ascribed to the amorphous matrix and crystalline phases. The latter were quenched-in during the production process and/or induced by ion bombardment. Curie temperatures of the amorphous matrixes were calculated using the Heisenberg model. For the as-quenched and irradiated ribbons they are of 223 K and 228 K, respectively. The behaviour of coercivity versus temperature was also analysed.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 680-683
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Spin-Lattice Relaxation in Polymers and Crystals Related to Disorder and Structure Defects
Autorzy:
Hoffmann, S. K.
Hilczer, W.
Radczyk, T.
Polus, I.
Powiązania:
https://bibliotekanauki.pl/articles/2035737.pdf
Data publikacji:
2003-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.41.+e
61.80.-x
76.30.-v
Opis:
Temperature dependences (4-300 K) of the electron spin-lattice relaxation have been determined by electron spin echo technique for free radicals in two polymeric systems: phenol-formaldehyde resin and polyhydrazodisulphide. The dependences are described in terms of dynamics specific for amorphous systems involving two-level tunnelling states at low temperatures, exchange-coupled clusters of paramagnetic centres and local oscillators. Some universal temperature behaviour of the spin-lattice relaxation of amorphous systems is suggested, with a strong increase in relaxation rate with temperature at low temperatures and much weaker increase above 50 K with characteristic linear temperature dependence in a broad temperature range and cosech(Δ/kT) -type behaviour. It is also shown that the amorphous-type behaviour appears in low temperatures relaxation studies of single crystals but it is due to a non-uniform distribution of doped paramagnetic ions. Such behaviour we have found in Tutton salt crystals doped with Cu$\text{}^{2+}$, as well as for free radical centres produced by ionising irradiation in (NH$\text{}_{4}$)$\text{}_{3}$H(SeO$\text{}_{4}$)$\text{}_{2}$ and Li(N$\text{}_{2}$H$\text{}_{5}$)SO$\text{}_{4}$ single crystals, where extended phonons are suppressed around radiation damage centres suggesting a local amorphisation of the crystal structure.zapisz i p
Źródło:
Acta Physica Polonica A; 2003, 103, 4; 373-385
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural investigation of K-feldspar KAlSi₃O₈ crystals by XRD and Raman spectroscopy: An application to petrological study of Luc Yen pegmatites, Yen Bai province, Vietnam
Autorzy:
Huong, L.
Nhung, N.
Kien, N.
Zubko, M.
Häger, T.
Hofmeister, W.
Powiązania:
https://bibliotekanauki.pl/articles/1075745.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
78.30.-j
81.70.Jb
82.80.-d
91.65.-n
91.60.-x
Opis:
K-feldspars in pegmatites from Luc Yen gem mining area, Yen Bai province, Vietnam were studied by X-ray fluorescence, X-ray powder diffraction and the Raman spectroscopy. Chemical analysis determined the K-feldspars in the form: of (K_{0.8909}Na_{0.0388}Ca_{0.002}Pb_{0.0042}Cs_{0.0024}Rb_{0.0338})(Al_{0.9975}Fe_{0.0053}Ti_{0.0004})Si_{2.988}O₈. Both X-ray powder diffraction and Raman spectroscopy indicated Luc Yen K-feldspars as orthoclase phase. Together with the values of Al content of the T1 tetrahedral sites in orthoclase, it is understood that Luc Yen pegmatites are of young ages (Cenozoic) and shallow intrusive types.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 892-893
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of External Pressure on Resonant Frequency of SAW Resonator
Autorzy:
Jasek, K.
Pasternak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1189910.pdf
Data publikacji:
2015-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
02.60.-x
43.35.Pt
46.80.+j
61.30.Hn
Opis:
The results of numerical simulations and experimental measurements of surface acoustic wave resonator centre frequency and amplitude dependence on external pressure changes in the range 0-1 atm are presented in the paper. According to the analytical model as well as numerical calculations the pressure influence on the resonator centre frequency is linear. Unfortunately, in the real measurements the linearity is difficult to observe. Additional effects that modify the linear dependence of the centre frequency on pressure are caused by water particles. It is well visible especially in the low pressure range. The phenomenon can be applied for research of water contents in dry gases as well as construction of acoustoelectronic vacuometers.
Źródło:
Acta Physica Polonica A; 2015, 127, 6; 1601-1604
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Control of Radiation Sensitivity of the Oxygen-Containing Fluorite Crystals
Autorzy:
Kachan, S.
Salapak, V.
Nahurskiy, O.
Pirko, I.
Powiązania:
https://bibliotekanauki.pl/articles/1030896.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
78.47.-p
78.70.-g
Opis:
The parameters of radiation sensitivity of the oxygen-doped fluorite crystals were calculated in a one-dimensional model. The limit concentrations of the color centers as a function of the concentration of the oxygen impurity in the fluorite crystal were defined. Fluorite crystals with anti-Frenkel defects in the anion sublattice of the crystal have a specific property: the discolored after irradiation crystal being irradiated repeatedly with ionizing radiation retains the "memory" of the preceding irradiation. Using an ion chain model this paper studies under what conditions the "radiation memory" effect can arise in the MeF₂-O²¯ crystals as well as the extent of its contribution into the overall radiation sensitivity of the crystal.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 824-828
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Radiation Defects in $CaF_2-CaO$ Crystals
Autorzy:
Kachan, S.
Obukhova, E.
Shtanko, V.
Chinkov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1550546.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
78.47.-p
78.70.-g
Opis:
The spectral and kinetic parameters of electron-pulse-initiated transient absorption of oxygen-doped $CaF_{2}$ crystals were studied using pulsed spectrometry with a nanosecond time resolution. It is shown that the formation of a $M_{A}^{+}$ color centers in $CaF_{2}$-0.01M%CaO crystals occurs by thermally activated diffusion of the vacancies. Activation energy of $M_{A}^{+}$ color centers formation process of 0.4 eV is established.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 195-198
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Radiation Defect Centers in Neutron Irradiated Si Using Inverse Laplace Transformation to Analysis of Photocurrent Relaxation Waveforms
Autorzy:
Kamiński, P.
Kozłowski, R.
Żelazko, J.
Powiązania:
https://bibliotekanauki.pl/articles/1361219.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
71.55.-i
61.80.-x
Opis:
High-resolution photoinduced transient spectroscopy has been applied to investigating the effect of the 1 MeV neutron fluence on the electronic properties of radiation defects in Czochralski grown silicon in magnetic field. A new approach to the analysis of the photocurrent relaxation waveforms as a function of time and temperature has been presented. It is based on using a two-dimensional numerical procedure with implementation of the inverse Laplace transformation for creating images of the sharp spectral fringes depicting the temperature dependences of the thermal emission rate for detected defect centers. In the material irradiated with the fluence of 3×$10^{14} cm^{-2}$, the dominant traps with activation energies of 75 meV and 545 meV are tentatively identified with an aggregate of three Si interstitials and the trivacancy, respectively. In the material irradiated with the fluence by the order of magnitude higher, the activation energies of the main traps are found to be 115, 350, 505, 545, and 590 meV. These traps are tentatively attributed to an aggregate of four Si interstitials, as well as to vacancy related centers such as $V_3$ (2-/-), $V_2O$ (-/0), $V_3$ (-/0) and $V_4$ (-/0), respectively.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 976-981
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers
Autorzy:
Komarov, F.
Vlasukova, L.
Milchanin, O.
Greben, M.
Komarov, A.
Mudryi, A.
Wesch, W.
Wendler, E.
Zuk, J.
Kulik, M.
Ismailova, G.
Powiązania:
https://bibliotekanauki.pl/articles/1400427.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.72.Ff
63.20.-e
78.66.-w
Opis:
Nanosized crystallites have been synthesized in the Si and $SiO_2//Si$ structures by means of As (170 keV, $3.2 × 10^{16} cm^{-2}$) and In (250 keV, $2.8 × 10^{16} cm^{-2}$) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 809-812
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions
Autorzy:
Komarov, F.
Vlasukova, L.
Milchanin, O.
Greben, M.
Parkhomenko, I.
Mudryi, A.
Wendler, E.
Zukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1198877.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.72.Ff
63.20.-e
78.66.-w
Opis:
Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1288-1291
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis
Autorzy:
Komarov, F.
Vlasukova, L.
Milchanin, O.
Mudryi, A.
Dunetz, B.
Wesch, W.
Wendler, E.
Karwat, C.
Powiązania:
https://bibliotekanauki.pl/articles/1503945.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.72.Ff
63.20.-e
78.66.-w
Opis:
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 87-90
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 38

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies